Patent US5404099A successfully refreshed from Google Patents.
US5404099A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Semiconductor device
Assignee: Toshiba Corp
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Filing: 1993-03-25
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Granted: 1995-04-04
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Expires: 2013-03-25
Abstract
Abstract A semiconductor device comprises a plurality of circuits formed on an IC chip area, having electric power systems each being independent, a plurality of power potential supply wires connected to the plurality of circuits, respectively, a plurality of power potential supply terminals connected to the plurality of power potential supply wires, respectively, at least one pad for voltage stress test formed on the IC chip area, and controllers for controlling a predetermined voltage stress to be applied from one of the plurality of power potential supply terminals to all power potential supply wires on the IC chip area by use of an input from the pad for voltage stress test.
Inventors
- 👤 Hiroshi Sahara
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-08 15:45
CPC Classifications
G; G01; G01R; G01R31/00; G01R31/28; G01R31/2851; G01R31/2853; G11; G11C; G11C29/00; G11C29/04; G11C29/50; G01R31/2884; G01R31/30; G01R31/3004; G11C11/00; G11C11/21; G11C11/34; G11C11/40; G11C11/401; H; H10; H10W; H10W72/00; H10W72/90; H10W72/921; H10W72/926; H10W72/931; H10W72/932
Claims Analysis
Total Claims: 13
Claim 1
Independent Claim
110 words
A semiconductor device comprising: a plurality of circuits formed on an IC chip area, having electric power systems each being independent; a plurality of power potential supply wires connected to the plurality of circuits, respectively; a plurality of power potential supply terminals connected to the plurality of power potential supply wires, respectively; at least one pad for voltage stress test formed on said IC chip area; and controllers for controlling a predetermined voltage stress to be applied from one of said plurality of power potential supply terminals to all power potential supply wires on the IC chip area by use of an input from said pad for voltage stress test.
Claim 2
Dependent Claim
110 words
A semiconductor device comprising: a plurality of circuits formed on an IC chip area, having electric power systems each being independent; a plurality of power potential supply wires connected to the plurality of circuits, respectively; a plurality of power potential supply terminals connected to the plurality of power potential supply wires, respectively; at least one pad for voltage stress test formed on said IC chip area; and controllers for controlling a predetermined voltage stress to be applied from one of said plurality of power potential supply terminals to all power potential supply wires on the IC chip area by use of an input from said pad for voltage stress test.
Claim 3
Dependent Claim
22 words
The device according to claim 1, wherein said controller has a transistor for selectively shortcircuiting said plurality of power potential supply wires.
Claim 4
Dependent Claim
110 words
A semiconductor device comprising: a plurality of circuits formed on an IC chip area, having electric power systems each being independent; a plurality of ground potential supply wires connected to the plurality of circuits, respectively; a plurality of ground potential supply terminals connected to the plurality of ground potential supply wires, respectively; at least one pad for voltage stress test formed on said IC chip area; and controllers for controlling a predetermined voltage stress to be applied from one of said plurality of ground potential supply terminals to all ground potential supply wires on the IC chip area by use of an input from said pad for voltage stress test.
Claim 5
Dependent Claim
110 words
A semiconductor device comprising: a plurality of circuits formed on an IC chip area, having electric power systems each being independent; a plurality of ground potential supply wires connected to the plurality of circuits, respectively; a plurality of ground potential supply terminals connected to the plurality of ground potential supply wires, respectively; at least one pad for voltage stress test formed on said IC chip area; and controllers for controlling a predetermined voltage stress to be applied from one of said plurality of ground potential supply terminals to all ground potential supply wires on the IC chip area by use of an input from said pad for voltage stress test.
Claim 6
Dependent Claim
22 words
The device according to claim 3, wherein said controller has a transistor for selectively shortcircuiting said plurality of ground potential supply wires.
Claim 7
Dependent Claim
184 words
A semiconductor device comprising: a plurality of circuits formed on an IC chip area, having electric power systems each being independent; a plurality of power potential supply wires connected to the plurality of circuits, respectively; a plurality of power potential supply terminals connected to the plurality of power potential supply wires, respectively; a plurality of ground potential supply wires connected to the plurality of circuits, respectively; a plurality of ground potential supply terminals connected to the plurality of ground potential supply wires, respectively; at least one pad for voltage stress test formed on said IC chip area; and controllers for controlling a predetermined voltage stress to be applied from one of said plurality of power potential supply terminals to all power potential supply wires on the IC chip area by use of an input from said pad for voltage stress test, and for controlling a predetermined voltage stress to be applied from one of said plurality of ground potential supply terminals to all ground potential supply wires on the IC chip area by use of the input from said pad for voltage stress test.
Claim 8
Dependent Claim
184 words
A semiconductor device comprising: a plurality of circuits formed on an IC chip area, having electric power systems each being independent; a plurality of power potential supply wires connected to the plurality of circuits, respectively; a plurality of power potential supply terminals connected to the plurality of power potential supply wires, respectively; a plurality of ground potential supply wires connected to the plurality of circuits, respectively; a plurality of ground potential supply terminals connected to the plurality of ground potential supply wires, respectively; at least one pad for voltage stress test formed on said IC chip area; and controllers for controlling a predetermined voltage stress to be applied from one of said plurality of power potential supply terminals to all power potential supply wires on the IC chip area by use of an input from said pad for voltage stress test, and for controlling a predetermined voltage stress to be applied from one of said plurality of ground potential supply terminals to all ground potential supply wires on the IC chip area by use of the input from said pad for voltage stress test.
Claim 9
Dependent Claim
35 words
The device according to claim 5, wherein said controller has a transistor for selectively shortcircuiting said plurality of power potential supply wires and a transistor for selectively shortcircuiting said plurality of ground potential supply wires.
Claim 10
Independent Claim
124 words
The device according to one of any claims 1 to 6, wherein at least one of said plurality of circuits is the memory circuit, the memory circuit has a memory cell array on which memory cells are arranged in a matrix form, word lines connected in common to the memory cell on the same row of the memory cell array, bit lines connected in common to the memory cell on the same column of the memory cell array, and means are formed to apply a voltage stress to all word lines of the memory cell of said memory circuit or larger number of word lines than the word lines selected in normal use by applying the voltage to the pad for voltage stress test.
Claim 11
Dependent Claim
25 words
The device according to claim 7, wherein said memory circuit is a dynamic type memory circuit having an array of a dynamic type memory cell.
Claim 12
Independent Claim
29 words
The device according to one of any claims 1 to 6, wherein said IC chip area is one of a plurality of chip areas formed on a semiconductor wafer.
Claim 13
Independent Claim
28 words
The device according to one of any claims 1 to 6, wherein said IC chip area is contained in a package, and finished as an IC circuit device.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1998-04-03 | 1998-10-03 | 1999-04-04 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2002-04-03 | 2002-10-03 | 2003-04-04 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2006-04-03 | 2006-10-03 | 2007-04-04 | $7700.00 | Window Closed / Lapsed |