Patent US5404046A successfully refreshed from Google Patents.
US5404046A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Flat semiconductor wiring layers
Assignee: Canon Inc
•
Filing: 1994-06-14
•
Granted: 1995-04-04
•
Expires: 2014-06-14
Abstract
Abstract The semiconductor circuit device is provided with a first wiring layer connected to a semiconductor substrate through a contact hole in an insulation film formed on a main surface of the semiconductor substrate, and a second wiring layer connected with the first wiring layer through a through-hole in an interlayer insulation film formed on the first wiring layer, wherein the first wiring is substantially flat on the contact hole and the area of the through-hole is smaller than that of the contact hole.
Inventors
- 👤 Shigeyuki Matsumoto
- 👤 Osamu Ikeda
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-02 10:59
CPC Classifications
H; H10; H10W; H10W20/00; H10W20/40; H10W20/41; H10W20/42
Claims Analysis
Total Claims: 14
Claim 1
Independent Claim
197 words
A semiconductor circuit device comprising a semiconductor substrate having a main surface, a first insulation film formed on said main surface, a first wiring layer over said first insulation film and connected to said substrate through a conductor filling a contact hole in said first insulation film, a first interlayer insulation film formed on said first wiring layer, a second wiring layer over said first interlayer insulation film and connected to said first wiring layer through a conductor filling a first through-hole in said first interlayer insulation film, a second interlayer insulation film formed on said second wiring layer, and a third wiring layer over said second interlayer insulation film and connected to said second wiring layer through a conductor filling a second through-hole in said second interlayer insulation film, wherein: said first second and third wiring layers are substantially flat on said conductors respectively filling said contact hole, said first through-hole and said second through-hole, and a maximum cross-sectional area of said first through-hole is smaller than a minimum cross-sectional area of said contact hole, and a maximum cross-sectional area of said second through-hole is not greater than a minimum cross-sectional area of said first through-hole.
Claim 2
Dependent Claim
197 words
A semiconductor circuit device comprising a semiconductor substrate having a main surface, a first insulation film formed on said main surface, a first wiring layer over said first insulation film and connected to said substrate through a conductor filling a contact hole in said first insulation film, a first interlayer insulation film formed on said first wiring layer, a second wiring layer over said first interlayer insulation film and connected to said first wiring layer through a conductor filling a first through-hole in said first interlayer insulation film, a second interlayer insulation film formed on said second wiring layer, and a third wiring layer over said second interlayer insulation film and connected to said second wiring layer through a conductor filling a second through-hole in said second interlayer insulation film, wherein: said first second and third wiring layers are substantially flat on said conductors respectively filling said contact hole, said first through-hole and said second through-hole, and a maximum cross-sectional area of said first through-hole is smaller than a minimum cross-sectional area of said contact hole, and a maximum cross-sectional area of said second through-hole is not greater than a minimum cross-sectional area of said first through-hole.
Claim 3
Dependent Claim
28 words
A semiconductor circuit device according to claim 1, wherein a maximum cross-sectional area of said second through-hole is equal to a minimum cross-sectional area of said first through-hole.
Claim 4
Dependent Claim
27 words
A semiconductor circuit device according to claim 1, wherein a maximum area of said second through-hole is smaller than a minimum cross-sectional area of said first through-hole.
Claim 5
Dependent Claim
40 words
A semiconductor circuit device according to claim 1, wherein a minimum cross-sectional area of said second through-hole is larger than said maximum cross-sectional area of said first through-hole, and is not larger than a maximum area of said contact hole.
Claim 6
Dependent Claim
19 words
A semiconductor circuit device according to claim 1, wherein said contact hole and said first through-hole are mutually overlapping.
Claim 7
Dependent Claim
20 words
A semiconductor circuit device according to claim 1, wherein said contact hole and said first through-hole are not mutually overlapping.
Claim 8
Dependent Claim
219 words
A semiconductor circuit device comprising a semiconductor substrate having a main surface, a first insulation film formed on said main surface, a first wiring layer over said first insulation film and connected to said substrate through a conductor filling a contact hole in said first insulation film, a first interlayer insulation film formed on said first wiring layer, a second wiring layer over said first interlayer insulation film and connected to said first wiring layer through a conductor filling a first through-hole in said first interlayer insulation film, a second interlayer insulation film formed on said second wiring layer, and a third wiring layer over said second interlayer insulation film and connected to said second wiring layer through a conductor filling a second through-hole in said second interlayer insulation film, wherein: said first, second and third wiring layers are substantially flat on the respective said conductors respectively filling said contact hole, said first through-hole and said second through-hole, and a maximum cross-sectional area of said first through-hole is smaller than a minimum cross-sectional area of said contact hole, a minimum cross-sectional area of said second through-hole is not less than a maximum cross-sectional area of said first through-hole, and a maximum cross-sectional area of said second through-hole is not greater than a minimum cross-sectional area of said contact hole.
Claim 9
Dependent Claim
219 words
A semiconductor circuit device comprising a semiconductor substrate having a main surface, a first insulation film formed on said main surface, a first wiring layer over said first insulation film and connected to said substrate through a conductor filling a contact hole in said first insulation film, a first interlayer insulation film formed on said first wiring layer, a second wiring layer over said first interlayer insulation film and connected to said first wiring layer through a conductor filling a first through-hole in said first interlayer insulation film, a second interlayer insulation film formed on said second wiring layer, and a third wiring layer over said second interlayer insulation film and connected to said second wiring layer through a conductor filling a second through-hole in said second interlayer insulation film, wherein: said first, second and third wiring layers are substantially flat on the respective said conductors respectively filling said contact hole, said first through-hole and said second through-hole, and a maximum cross-sectional area of said first through-hole is smaller than a minimum cross-sectional area of said contact hole, a minimum cross-sectional area of said second through-hole is not less than a maximum cross-sectional area of said first through-hole, and a maximum cross-sectional area of said second through-hole is not greater than a minimum cross-sectional area of said contact hole.
Claim 10
Dependent Claim
28 words
A semiconductor circuit device according to claim 7, wherein a maximum cross-sectional area of said second through-hole is equal to a minimum cross-sectional area of said first through-hole.
Claim 11
Dependent Claim
27 words
A semiconductor circuit device according to claim 7, wherein a maximum area of said second through-hole is smaller than a minimum cross-sectional area of said first through-hole.
Claim 12
Dependent Claim
40 words
A semiconductor circuit device according to claim 7, wherein a minimum cross-sectional area of said second through-hole is larger than said maximum cross-sectional area of said first through-hole, and is not larger than a maximum area of said contact hole.
Claim 13
Dependent Claim
19 words
A semiconductor circuit device according to claim 7, wherein said contact hole and said first through-hole are mutually overlapping.
Claim 14
Dependent Claim
20 words
A semiconductor circuit device according to claim 7, wherein said contact hole and said first through-hole are not mutually overlapping.
References Cited (Backward Citations)
EP0021133A2
Cited
US4403217A
Cited
US4525709A
Cited
JPS59117236A
Cited
JPS59117226A
Cited
DE3815569A1
Cited
DE3916622A1
Cited
JPH02256238A
Cited
US5019531A
Cited
US5060045A
Cited
EP0420594A2
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1998-04-03 | 1998-10-03 | 1999-04-04 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2002-04-03 | 2002-10-03 | 2003-04-04 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2006-04-03 | 2006-10-03 | 2007-04-04 | $7700.00 | Window Closed / Lapsed |