US5404046A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Flat semiconductor wiring layers
Assignee: Canon Inc
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Filing: 1994-06-14
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Granted: 1995-04-04
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Expires: 2014-06-14
Abstract
Abstract The semiconductor circuit device is provided with a first wiring layer connected to a semiconductor substrate through a contact hole in an insulation film formed on a main surface of the semiconductor substrate, and a second wiring layer connected with the first wiring layer through a through-hole in an interlayer insulation film formed on the first wiring layer, wherein the first wiring is substantially flat on the contact hole and the area of the through-hole is smaller than that of the contact hole.
Inventors
- 👤 Shigeyuki Matsumoto
- 👤 Osamu Ikeda
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-02 08:59
CPC Classifications
H; H10; H10W; H10W20/00; H10W20/40; H10W20/41; H10W20/42
Claims Analysis
Total Claims: 14
Claim 1
Independent Claim
197 words
A semiconductor circuit device comprising a semiconductor substrate having a main surface, a first insulation film formed on said main surface, a first wiring layer over said first insulation film and connected to said substrate through a conductor filling a contact hole in said first insulation film, a first interlayer insulation film formed on said first wiring layer, a second wiring layer over said first interlayer insulation film and connected to said first wiring layer through a conductor filling a first through-hole in said first interlayer insulation film, a second interlayer insulation film formed on said second wiring layer, and a third wiring layer over said second interlayer insulation film and connected to said second wiring layer through a conductor filling a second through-hole in said second interlayer insulation film, wherein: said first second and third wiring layers are substantially flat on said conductors respectively filling said contact hole, said first through-hole and said second through-hole, and a maximum cross-sectional area of said first through-hole is smaller than a minimum cross-sectional area of said contact hole, and a maximum cross-sectional area of said second through-hole is not greater than a minimum cross-sectional area of said first through-hole.
Claim 2
Dependent Claim
197 words
A semiconductor circuit device comprising a semiconductor substrate having a main surface, a first insulation film formed on said main surface, a first wiring layer over said first insulation film and connected to said substrate through a conductor filling a contact hole in said first insulation film, a first interlayer insulation film formed on said first wiring layer, a second wiring layer over said first interlayer insulation film and connected to said first wiring layer through a conductor filling a first through-hole in said first interlayer insulation film, a second interlayer insulation film formed on said second wiring layer, and a third wiring layer over said second interlayer insulation film and connected to said second wiring layer through a conductor filling a second through-hole in said second interlayer insulation film, wherein: said first second and third wiring layers are substantially flat on said conductors respectively filling said contact hole, said first through-hole and said second through-hole, and a maximum cross-sectional area of said first through-hole is smaller than a minimum cross-sectional area of said contact hole, and a maximum cross-sectional area of said second through-hole is not greater than a minimum cross-sectional area of said first through-hole.
Claim 3
Dependent Claim
28 words
A semiconductor circuit device according to claim 1, wherein a maximum cross-sectional area of said second through-hole is equal to a minimum cross-sectional area of said first through-hole.
Claim 4
Dependent Claim
27 words
A semiconductor circuit device according to claim 1, wherein a maximum area of said second through-hole is smaller than a minimum cross-sectional area of said first through-hole.
Claim 5
Dependent Claim
40 words
A semiconductor circuit device according to claim 1, wherein a minimum cross-sectional area of said second through-hole is larger than said maximum cross-sectional area of said first through-hole, and is not larger than a maximum area of said contact hole.
Claim 6
Dependent Claim
19 words
A semiconductor circuit device according to claim 1, wherein said contact hole and said first through-hole are mutually overlapping.
Claim 7
Dependent Claim
20 words
A semiconductor circuit device according to claim 1, wherein said contact hole and said first through-hole are not mutually overlapping.
Claim 8
Dependent Claim
219 words
A semiconductor circuit device comprising a semiconductor substrate having a main surface, a first insulation film formed on said main surface, a first wiring layer over said first insulation film and connected to said substrate through a conductor filling a contact hole in said first insulation film, a first interlayer insulation film formed on said first wiring layer, a second wiring layer over said first interlayer insulation film and connected to said first wiring layer through a conductor filling a first through-hole in said first interlayer insulation film, a second interlayer insulation film formed on said second wiring layer, and a third wiring layer over said second interlayer insulation film and connected to said second wiring layer through a conductor filling a second through-hole in said second interlayer insulation film, wherein: said first, second and third wiring layers are substantially flat on the respective said conductors respectively filling said contact hole, said first through-hole and said second through-hole, and a maximum cross-sectional area of said first through-hole is smaller than a minimum cross-sectional area of said contact hole, a minimum cross-sectional area of said second through-hole is not less than a maximum cross-sectional area of said first through-hole, and a maximum cross-sectional area of said second through-hole is not greater than a minimum cross-sectional area of said contact hole.
Claim 9
Dependent Claim
219 words
A semiconductor circuit device comprising a semiconductor substrate having a main surface, a first insulation film formed on said main surface, a first wiring layer over said first insulation film and connected to said substrate through a conductor filling a contact hole in said first insulation film, a first interlayer insulation film formed on said first wiring layer, a second wiring layer over said first interlayer insulation film and connected to said first wiring layer through a conductor filling a first through-hole in said first interlayer insulation film, a second interlayer insulation film formed on said second wiring layer, and a third wiring layer over said second interlayer insulation film and connected to said second wiring layer through a conductor filling a second through-hole in said second interlayer insulation film, wherein: said first, second and third wiring layers are substantially flat on the respective said conductors respectively filling said contact hole, said first through-hole and said second through-hole, and a maximum cross-sectional area of said first through-hole is smaller than a minimum cross-sectional area of said contact hole, a minimum cross-sectional area of said second through-hole is not less than a maximum cross-sectional area of said first through-hole, and a maximum cross-sectional area of said second through-hole is not greater than a minimum cross-sectional area of said contact hole.
Claim 10
Dependent Claim
28 words
A semiconductor circuit device according to claim 7, wherein a maximum cross-sectional area of said second through-hole is equal to a minimum cross-sectional area of said first through-hole.
Claim 11
Dependent Claim
27 words
A semiconductor circuit device according to claim 7, wherein a maximum area of said second through-hole is smaller than a minimum cross-sectional area of said first through-hole.
Claim 12
Dependent Claim
40 words
A semiconductor circuit device according to claim 7, wherein a minimum cross-sectional area of said second through-hole is larger than said maximum cross-sectional area of said first through-hole, and is not larger than a maximum area of said contact hole.
Claim 13
Dependent Claim
19 words
A semiconductor circuit device according to claim 7, wherein said contact hole and said first through-hole are mutually overlapping.
Claim 14
Dependent Claim
20 words
A semiconductor circuit device according to claim 7, wherein said contact hole and said first through-hole are not mutually overlapping.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1998-04-03 | 1998-10-03 | 1999-04-04 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2002-04-03 | 2002-10-03 | 2003-04-04 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2006-04-03 | 2006-10-03 | 2007-04-04 | $7700.00 | Window Closed / Lapsed |