US5404035A
Expired / Lapsed
US
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Multi-voltage-level master-slice integrated circuit
Assignee: Renesas Electronics Corp
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Filing: 1993-06-10
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Granted: 1995-04-04
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Expires: 2013-06-10
Abstract
Abstract A master-slice semiconductor integrated circuit device includes a substrate for an input/output circuit section, which is segmented into a plurality of segments during a master processing step. In a slice processing step, slice cells are formed, using different substrate segments. Input/output circuits are formed by respective slice cells so that desired different supply voltages can be applied to input/output circuits on different substrate segments.
Inventors
- 👤 Hideki Taniguchi
- 👤 Ichiro Tomioka
- 👤 Kunihiko Sanada
- 👤 Masatomi Okabe
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-08 16:14
CPC Classifications
H; H10; H10D; H10D84/00; H10D84/90; H10D84/998; H10W; H10W72/00; H10W72/90; H10W72/931; H10W72/932
Claims Analysis
Total Claims: 6
Claim 1
Independent Claim
139 words
A multi-voltage-level master-slice semiconductor integrated circuit device comprising: an input/output circuit section having a substrate divided into a first substrate segment of a first conductivity type to which a first supply voltage is to be applied, a second substrate segment of the first conductivity type to which a second supply voltage is to be applied, and a third substrate segment of a second conductivity type to which a reference voltage is to be applied; an input/output cell including said first, second and third substrate segments, an input/output circuit comprising a cascade connection of a pre-driver stage and a main driver stage driven by said pre-driver stage, said pre-driver stage being formed of circuit elements disposed on said first and third substrate segments, said main driver stage being formed of circuit elements disposed on said second and third substrate segments.
Claim 2
Dependent Claim
139 words
A multi-voltage-level master-slice semiconductor integrated circuit device comprising: an input/output circuit section having a substrate divided into a first substrate segment of a first conductivity type to which a first supply voltage is to be applied, a second substrate segment of the first conductivity type to which a second supply voltage is to be applied, and a third substrate segment of a second conductivity type to which a reference voltage is to be applied; an input/output cell including said first, second and third substrate segments, an input/output circuit comprising a cascade connection of a pre-driver stage and a main driver stage driven by said pre-driver stage, said pre-driver stage being formed of circuit elements disposed on said first and third substrate segments, said main driver stage being formed of circuit elements disposed on said second and third substrate segments.
Claim 3
Dependent Claim
212 words
A multi-voltage-level master-slice semiconductor integrated circuit device comprising: an input/output circuit section disposed about an edge of said device; said input/output circuit section having a substrate divided into a first substrate segment of a first conductivity type to which a first supply voltage is to be applied, a second substrate segment of the first conductivity type to which a second supply voltage is to be applied, and a third substrate segment of a second conductivity type to which a reference voltage is to be applied; means for isolating said first supply voltage of said first substrate segment from said second supply voltage of said second substrate segment; a first input/output cell including said first, second, and third substrate segments; said first input/output cell including a first input/output circuit having circuit elements disposed on said first and third substrate segments of said first input/output cell; a second input/output cell including said first, second, and third segments; said second input/output cell including a second input/output circuit having circuit elements disposed on said second and third substrate segments of said second input/output cell; said first, second, and third substrate segments being concentrically disposed about a periphery of the device; and said means for isolating including interposing said third segment between said first and second segments.
Claim 4
Dependent Claim
212 words
A multi-voltage-level master-slice semiconductor integrated circuit device comprising: an input/output circuit section disposed about an edge of said device; said input/output circuit section having a substrate divided into a first substrate segment of a first conductivity type to which a first supply voltage is to be applied, a second substrate segment of the first conductivity type to which a second supply voltage is to be applied, and a third substrate segment of a second conductivity type to which a reference voltage is to be applied; means for isolating said first supply voltage of said first substrate segment from said second supply voltage of said second substrate segment; a first input/output cell including said first, second, and third substrate segments; said first input/output cell including a first input/output circuit having circuit elements disposed on said first and third substrate segments of said first input/output cell; a second input/output cell including said first, second, and third segments; said second input/output cell including a second input/output circuit having circuit elements disposed on said second and third substrate segments of said second input/output cell; said first, second, and third substrate segments being concentrically disposed about a periphery of the device; and said means for isolating including interposing said third segment between said first and second segments.
Claim 5
Dependent Claim
237 words
A multi-voltage-level master-slice semiconductor integrated circuit device comprising: an input/output circuit section disposed about an edge of said device; said input/output circuit section having a substrate divided into a first substrate segment of a first conductivity type to which a first supply voltage is to be applied, a second substrate segment of a second conductivity type to which a first reference voltage is to be applied, a third substrate segment of the first conductivity type to which a second supply voltage is to be applied, and a fourth substrate segment of the second conductivity type which a second reference voltage is to be applied; means for isolating said first supply voltage of said first substrate segment from said second supply voltage of said third substrate segment; a first input/output cell including said first, second, third and fourth substrate segments; said first input/output cell including a first input/output circuit having circuit elements disposed on said first and second substrate segments of said first input/output cell; a second input/output cell including said first, second, and third segments; and said second input/output cell including a second input/output circuit having circuit elements disposed on said third and fourth substrate segments of said second input/output cell; said first, second, third and fourth segments being concentrically disposed about a periphery of the device; and said means for isolating including interposing one of said second and fourth segments between said first and third segments.
Claim 6
Dependent Claim
237 words
A multi-voltage-level master-slice semiconductor integrated circuit device comprising: an input/output circuit section disposed about an edge of said device; said input/output circuit section having a substrate divided into a first substrate segment of a first conductivity type to which a first supply voltage is to be applied, a second substrate segment of a second conductivity type to which a first reference voltage is to be applied, a third substrate segment of the first conductivity type to which a second supply voltage is to be applied, and a fourth substrate segment of the second conductivity type which a second reference voltage is to be applied; means for isolating said first supply voltage of said first substrate segment from said second supply voltage of said third substrate segment; a first input/output cell including said first, second, third and fourth substrate segments; said first input/output cell including a first input/output circuit having circuit elements disposed on said first and second substrate segments of said first input/output cell; a second input/output cell including said first, second, and third segments; and said second input/output cell including a second input/output circuit having circuit elements disposed on said third and fourth substrate segments of said second input/output cell; said first, second, third and fourth segments being concentrically disposed about a periphery of the device; and said means for isolating including interposing one of said second and fourth segments between said first and third segments.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1998-04-03 | 1998-10-03 | 1999-04-04 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2002-04-03 | 2002-10-03 | 2003-04-04 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2006-04-03 | 2006-10-03 | 2007-04-04 | $7700.00 | Window Closed / Lapsed |