US5402748A
Expired / Lapsed
US
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Method of growing a compound semiconductor film
Assignee: Fujitsu Ltd
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Filing: 1993-04-08
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Granted: 1995-04-04
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Expires: 2013-04-08
Abstract
Abstract A method of fabricating a semiconductor device comprises the steps of growing a first layer of a group III-V compound semiconductor material on a substrate by a vapor phase deposition process by setting the temperature at a first temperature, raising the temperature from the first temperature to a second, higher temperature, growing a second layer of a group III-V compound semiconductor material on the first layer, wherein the step of raising the temperature is conducted while supplying a source gas for the group V element under a condition, determined in terms of a total pressure and a partial pressure of the source gas, such that the condition falls within a region defined by a first condition wherein the total pressure is set to 76 Torr and the partial pressure is set to 0.35 Torr, a second condition wherein the total pressure is set to 760 Torr and the partial pressure is set to 0.6 Torr, a third condition wherein the total pressure is set to 760 Torr and the partial pressure is set to 5.7 Torr, and a fourth condition wherein the total pressure is set to 76 Torr and the partial pressure is set to 1.3 Torr.
Inventors
- 👤 Kazuaki Takai
- 👤 Takashi Eshita
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 07:47
CPC Classifications
C; C30; C30B; C30B25/00; C30B25/02; C30B29/00; C30B29/10; C30B29/40; H; H10; H10P; H10P14/00; H10P14/20; H10P14/24; H10P14/29; H10P14/2901; H10P14/2902; H10P14/2905; H10P14/32; H10P14/3202; H10P14/3214; H10P14/3218; H10P14/3221; H10P14/3242; H10P14/3244; H10P14/3251; H10P14/3252; H10P14/34; H10P14/3402; H10P14/3414; H10P14/3418; H10P14/3421; H10P14/36; H10P14/3602
Claims Analysis
Total Claims: 8
Claim 1
Independent Claim
207 words
A method of fabricating a semiconductor device, comprising the steps of: growing a first layer of a group III-V compound semiconductor material on a substrate by a vapor phase deposition process by setting the temperature of said substrate at a first temperature; raising the temperature of said substrate from said first temperature to a second, higher temperature; growing a second layer of a group III-V compound semiconductor material on said first layer at said second temperature; said step of raising the temperature being conducted while supplying a source gas for a group V element under a condition, determined in terms of a total pressure and a partial pressure of said source gas, such that said condition falls within a region defined by a first condition wherein the total pressure is set to 76 Torr and the partial pressure is set to 0.35 Torr, a second condition wherein the total pressure is set to 760 Torr and the partial pressure is set to 0.6 Torr, a third condition wherein the total pressure is set to 760 Torr and the partial pressure is set to 5.7 Torr, and a fourth condition wherein the total pressure is set to 76 Torr and the partial pressure is set to 1.3 Torr.
Claim 2
Independent Claim
207 words
A method of fabricating a semiconductor device, comprising the steps of: growing a first layer of a group III-V compound semiconductor material on a substrate by a vapor phase deposition process by setting the temperature of said substrate at a first temperature; raising the temperature of said substrate from said first temperature to a second, higher temperature; growing a second layer of a group III-V compound semiconductor material on said first layer at said second temperature; said step of raising the temperature being conducted while supplying a source gas for a group V element under a condition, determined in terms of a total pressure and a partial pressure of said source gas, such that said condition falls within a region defined by a first condition wherein the total pressure is set to 76 Torr and the partial pressure is set to 0.35 Torr, a second condition wherein the total pressure is set to 760 Torr and the partial pressure is set to 0.6 Torr, a third condition wherein the total pressure is set to 760 Torr and the partial pressure is set to 5.7 Torr, and a fourth condition wherein the total pressure is set to 76 Torr and the partial pressure is set to 1.3 Torr.
Claim 3
Dependent Claim
33 words
A method as claimed in claim 1, wherein said step of growing said first layer and said step of growing said second layer are achieved by a metal organic vapor phase deposition process.
Claim 4
Dependent Claim
25 words
A method as claimed in claim 2, wherein said vapor phase deposition process uses AsH 3 as the source gas for the group V element.
Claim 5
Dependent Claim
19 words
A method as claimed in claim 2, wherein said first and second layers contain said group V element commonly.
Claim 6
Dependent Claim
14 words
A method as claimed in claim 1, wherein said substrate essentially consist of Si.
Claim 7
Dependent Claim
32 words
A method as claimed in claim 1, wherein said first and second layer comprises a group III-V compound semiconductor material selected from GaAs, AlAs, InAs, GaP, AlP, InP and a mixture thereof.
Claim 8
Dependent Claim
31 words
A method as claimed in claim 1, further comprising the steps of: providing a semiconductor device layer on said second layer; and forming a semiconductor layer on said semiconductor device layer.
References Cited (Backward Citations)
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Cited
US3963539A
Cited
JPS5895696A
Cited
JPS60191096A
Cited
US4659401A
Cited
US5035767A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1998-04-03 | 1998-10-03 | 1999-04-04 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2002-04-03 | 2002-10-03 | 2003-04-04 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2006-04-03 | 2006-10-03 | 2007-04-04 | $7700.00 | Window Closed / Lapsed |