US5035767A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Process for growing compound semiconductor monocrystal
Assignee: Japan Science and Technology Agency
•
Filing: 1990-07-19
•
Granted: 1991-07-30
•
Expires: 2010-07-19
Abstract
Abstract This invention relates to an improvement in a reduced gaseous phase growing method for compound semiconductor monocrystal formed from a plurality of elements such as GaAs. A gas of compound containing each of constitutional elements is introduced into a reduced reaction pipe of which temperature distribution is controlled, without use of H 2 or He as a carrier gas. Thereby it is possible to control the amount of introduction of each of the elements of the compound semiconductor subjected to epitaxial growth. In addition, the temperature distribution within the reaction pipe is controlled and the temperature of the crystal substrate is maintained at a relatively low temperature to improve the quality of the growing crystal.
Inventors
- 👤 Junichi Nishizawa
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 02:58
CPC Classifications
C; C30; C30B; C30B25/00; C30B25/02; C30B25/10; C30B25/14; C30B29/00; C30B29/10; C30B29/40; H; H10; H10P; H10P14/00; H10P14/20; H10P14/24; H10P14/34; H10P14/3402; H10P14/3414; H10P14/3421; Y; Y10; Y10S; Y10S117/00; Y10S117/903; Y10S117/904
Claims Analysis
Total Claims: 16
Claim 1
Independent Claim
60 words
An open-pipe system reduced gaseous phase growth process for preparing a semiconductor compound which comprises introducing gases from the exterior into the interior of a reaction pipe in which a monocrystal substrate is positioned, wherein said gases do not contain a carrier gas and each gas contains an element which will become part of the semiconductor compound to be formed.
Claim 2
Dependent Claim
60 words
An open-pipe system reduced gaseous phase growth process for preparing a semiconductor compound which comprises introducing gases from the exterior into the interior of a reaction pipe in which a monocrystal substrate is positioned, wherein said gases do not contain a carrier gas and each gas contains an element which will become part of the semiconductor compound to be formed.
Claim 3
Dependent Claim
19 words
A process according to claim 1, wherein the temperature of the substrate is lower than that of the gases.
Claim 4
Dependent Claim
22 words
A process according to claim 2, wherein one of the gases is a halide and another of the gases is a hydride.
Claim 5
Dependent Claim
19 words
A process according to claim 3, wherein the halide is GaCl 3 and the hydride is AsH 3 .
Claim 6
Dependent Claim
79 words
An open-pipe system reduced gaseous phase growth process for preparing a semiconductor compound which comprises introducing gases from the exterior into the interior of a reaction pipe in which a monocrystal substrate is positioned, wherein said gases do not contain a carrier gas and each gas contains an element which will become part of the semiconductor compound to be formed, and wherein at least one of the gases being introduced into the reaction pipe is irradiated with ultraviolet light.
Claim 7
Dependent Claim
79 words
An open-pipe system reduced gaseous phase growth process for preparing a semiconductor compound which comprises introducing gases from the exterior into the interior of a reaction pipe in which a monocrystal substrate is positioned, wherein said gases do not contain a carrier gas and each gas contains an element which will become part of the semiconductor compound to be formed, and wherein at least one of the gases being introduced into the reaction pipe is irradiated with ultraviolet light.
Claim 8
Dependent Claim
26 words
A process according to claim 5, wherein the temperature of the substrate is lower than that of the gases in the interior of the reaction pipe.
Claim 9
Dependent Claim
22 words
A process according to claim 5, wherein one of the gases is a halide and another of the gases is a hydride.
Claim 10
Dependent Claim
19 words
A process according to claim 7, wherein the halide is GaCl 3 and the hydride is AsH 3 .
Claim 11
Dependent Claim
17 words
A process according to claim 5, wherein the surface of the substrate is irradiated with ultraviolet light.
Claim 12
Dependent Claim
72 words
An open-pipe system reduced gaseous phase growth process for preparing a semiconductor compound which comprises introducing gases from the exterior into the interior of a reaction pipe in which a monocrystal substrate is positioned, wherein said gases do not contain a carrier gas and each gas contains an element which will become part of the semiconductor compound to be formed, and wherein the surface of the substrate is irradiated with ultraviolet light.
Claim 13
Dependent Claim
72 words
An open-pipe system reduced gaseous phase growth process for preparing a semiconductor compound which comprises introducing gases from the exterior into the interior of a reaction pipe in which a monocrystal substrate is positioned, wherein said gases do not contain a carrier gas and each gas contains an element which will become part of the semiconductor compound to be formed, and wherein the surface of the substrate is irradiated with ultraviolet light.
Claim 14
Dependent Claim
26 words
A process according to claim 10, wherein the temperature of the substrate is lower than that of the gases in the interior of the reaction pipe.
Claim 15
Dependent Claim
22 words
A process according to claim 10, wherein one of the gases is a halide and another of the gases is a hydride.
Claim 16
Dependent Claim
19 words
A process according to claim 12, wherein the halide is GaCl 3 and the hydride is AsH 3 .
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1994-07-29 | 1995-01-28 | 1995-07-30 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1998-07-29 | 1999-01-28 | 1999-07-30 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2002-07-29 | 2003-01-28 | 2003-07-30 | $7700.00 | Window Closed / Lapsed |