Nonvolatile semiconductor memory device capable of erasing by a word line unit

Claim 2

A nonvolatile semiconductor memory device comprising: a plurality of memory cells, which are arranged in a matrix form having rows and columns, each including a control gate, a floating gate, a source and a drain, and holding an information charge in said floating gate; a plurality of bit lines each of which correspond to a column of said memory cells, and connect to the drains of said memory cells in the corresponding column; a plurality of word lines which extend in a direction crossing said bit lines, each of said plurality of word lines correspond to a row of said memory cells, and connect to the control gates of said memory cells in the corresponding row; a plurality of source lines each of which correspond to a row of said memory cells, and connect to the sources of said memory cells in the corresponding row; high voltage generating means which is connected to each of said word lines, has a capacitor to which a predetermined clock is applied in response to a signal for selecting one of said word lines, and generates a negative high voltage; and erasing means which applies said negative high voltage generated by said high voltage generating means to the word line selected by said selection signal in an erasing operation, and grounds the source line connected to the source of the corresponding memory cell.

Claim 3

A nonvolatile semiconductor memory device according to claim 1, wherein said high voltage generating means includes: a first terminal to which a negative high voltage is applied, and a second terminal to which said predetermined clock is applied; said capacitor is arranged between said first terminal and said second terminal; said semiconductor memory device further comprises: a first p-channel transistor arranged between said first terminal and said capacitor; an n-channel transistor arranged between said capacitor and said second terminal; and a second p-channel transistor arranged between a first connecting point located at a side of said word line and a connecting point formed between said first terminal and said capacitor; wherein said first n-channel transistor has a gate connected to said first connecting point, said second n-channel transistor has a gate connected to said second connecting point, and said n-channel transistor has a gate for receiving said selection signal.

Claim 4

A nonvolatile semiconductor memory device according to claim 2, wherein said selection signal is formed of an output of an NAND gate supplied through an inverter.

Claim 5

A nonvolatile semiconductor memory device according to claim 1, wherein said erasing means includes a latch circuit, to which said selection signal is applied, and applies the negative high voltage to the predetermined word line in accordance with contents of setting of said latch circuit.

Claim 6

A nonvolatile semiconductor memory device according to claim 1, wherein said capacitor is formed of a plurality of capacitors connected in series.

Claim 7

A nonvolatile semiconductor memory device according to claim 5, wherein an upper conductor forming said capacitor is formed in a step for forming said control gate, and a lower conductor for forming said capacity is formed in a step for forming said floating gate.

Claim 8

A nonvolatile semiconductor memory device according to claim 1, wherein a p-channel transistor is arranged between said capacity and a terminal to which said clock is applied, and said p-channel transistor receives at its gate said selection signal through an n-channel transistor having a gate connected to said supply voltage.

Claim 9

A nonvolatile semiconductor memory device comprising: a plurality of memory cells, which are arranged in a matrix form having rows and columns, each including a control gate, a floating gate, a source and a drain, and holding an information charge in said floating gate; a plurality of bit lines each of which correspond to a column of said memory cells, and connect to the drains of said memory cells in the corresponding column; a plurality of word lines which extend in a direction crossing said bit lines, each of said plurality of word lines correspond to a row of said memory cells, and connect to the control gates of said memory cells in the corresponding row; a plurality of source lines each of which correspond to a row of said memory cells, and connect to the sources of said memory cells in the corresponding row; high voltage generating means which is connected to each of said word lines, has a capacitor to which a predetermined clock is applied in response to a signal for selecting one of said word lines, and generates a negative high voltage; and erasing means which applies the negative high voltage generated by said high voltage generating means to the word line selected by said selection signal in an erasing operation, and applies a positive voltage to said source line connected to the source of the corresponding memory cell.

Claim 10

A nonvolatile semiconductor memory device comprising: a plurality of memory cells, which are arranged in a matrix form having rows and columns, each including a control gate, a floating gate, a source and a drain, and holding an information charge in said floating gate; a plurality of bit lines each of which correspond to a column of said memory cells, and connect to the drains of said memory cells in the corresponding column; a plurality of word lines which extend in a direction crossing said bit lines, each of said plurality of word lines correspond to a row of said memory cells, and connect to the control gates of said memory cells in the corresponding row; a plurality of source lines each of which correspond to a row of said memory cells, and connect to the sources of said memory cells in the corresponding row; high voltage generating means which is connected to each of said word lines, has a capacitor to which a predetermined clock is applied in response to a signal for selecting one of said word lines, and generates a negative high voltage; and erasing means which applies the negative high voltage generated by said high voltage generating means to the word line selected by said selection signal in an erasing operation, and applies a positive voltage to said source line connected to the source of the corresponding memory cell.

Claim 11

A nonvolatile semiconductor memory device comprising: a plurality of memory cells, which are arranged in a matrix form having rows and columns, each including a control gate, a floating gate, a source and a drain, and holding an information charge in said floating gate; a plurality of bit lines each of which correspond to a column of said memory cells, and connect to the drains of said memory cells in the corresponding column; a plurality of word lines which extend in a direction crossing said bit lines, each of said plurality of word lines correspond to a row of said memory cells, and connect to the control gates of said memory cells in the corresponding row; a plurality of source lines each of which correspond to a row of said memory cells, and connect to the sources of said memory cells in the corresponding row; a plurality of row decoder means each provided corresponding to each of said word lines for generating a signal of an L level at the time of reading/writing in response to a signal for selecting one of said word lines, and for generating a signal of an H level at the time of erasing in response to a signal for selecting one of said word lines; and a plurality of high voltage providing means each provided between each of said row decoding means and each of said word lines, comprising first and second transistors of a first conductivity type connected together in series, and a third transistor of a second conductivity type, said third transistor connected in series with said first and second transistors, a corresponding one of said word lines being connected to a connecting part therefor, the gates of said first and second transistors each being provided with an output signal of said row decoding means, a power supply potential provided to the opposite side of said connecting part of said first transistor, a ground voltage provided to the opposite side of said connecting part of said second transistor, and a negative voltage is applied to the gate of said third transistor.

Claim 12

A nonvolatile semiconductor memory device comprising: a plurality of memory cells, which are arranged in a matrix form having rows and columns, each including a control gate, a floating gate, a source and a drain, and holding an information charge in said floating gate; a plurality of bit lines each of which correspond to a column of said memory cells, and connect to the drains of said memory cells in the corresponding column; a plurality of word lines which extend in a direction crossing said bit lines, each of said plurality of word lines correspond to a row of said memory cells, and connect to the control gates of said memory cells in the corresponding row; a plurality of source lines each of which correspond to a row of said memory cells, and connect to the sources of said memory cells in the corresponding row; a plurality of row decoder means each provided corresponding to each of said word lines for generating a signal of an L level at the time of reading/writing in response to a signal for selecting one of said word lines, and for generating a signal of an H level at the time of erasing in response to a signal for selecting one of said word lines; and a plurality of high voltage providing means each provided between each of said row decoding means and each of said word lines, comprising first and second transistors of a first conductivity type connected together in series, and a third transistor of a second conductivity type, said third transistor connected in series with said first and second transistors, a corresponding one of said word lines being connected to a connecting part therefor, the gates of said first and second transistors each being provided with an output signal of said row decoding means, a power supply potential provided to the opposite side of said connecting part of said first transistor, a ground voltage provided to the opposite side of said connecting part of said second transistor, and a negative voltage is applied to the gate of said third transistor.

Claim 13

A nonvolatile semiconductor memory device comprising: a plurality of memory cells which are arranged in a matrix form having rows and columns, each including a control gate, a floating gate, a source and a drain, and holding an information charge in said floating gate; a plurality of bit lines each of which correspond to a column of said memory cells, and connect to the drains of said memory cells in the corresponding column; a plurality of word lines which extend in a direction crossing said bit lines, each of said plurality of word lines correspond to a row of said memory cells, and connect to the control gates of said memory cells in the corresponding row; a plurality of source lines each of which correspond to a row of said memory cells, and connect to the sources of said memory cells in the corresponding row; erasing means which applies a negative high voltage to a selected word line in an erasing operation, applies a positive voltage to the source of the corresponding memory cell, and applies a positive voltage to an unselected word lines; and grounding means which simultaneously grounds said bit lines and said source lines after completion of said erasing operation by said erasing means.

Claim 14

A nonvolatile semiconductor memory device comprising: a plurality of memory cells which are arranged in a matrix form having rows and columns, each including a control gate, a floating gate, a source and a drain, and holding an information charge in said floating gate; a plurality of bit lines each of which correspond to a column of said memory cells, and connect to the drains of said memory cells in the corresponding column; a plurality of word lines which extend in a direction crossing said bit lines, each of said plurality of word lines correspond to a row of said memory cells, and connect to the control gates of said memory cells in the corresponding row; a plurality of source lines each of which correspond to a row of said memory cells, and connect to the sources of said memory cells in the corresponding row; erasing means which applies a negative high voltage to a selected word line in an erasing operation, applies a positive voltage to the source of the corresponding memory cell, and applies a positive voltage to an unselected word lines; and grounding means which simultaneously grounds said bit lines and said source lines after completion of said erasing operation by said erasing means.

Claim 15

A nonvolatile semiconductor memory device according to claim 10, wherein ends of said bit lines are connected to ends of said source lines through a connecting portion, to which a ground potential is applied through a transistor.

Claim 16

A nonvolatile semiconductor memory device according to claim 10, wherein ends of said bit line are connected to an input/output line, to which a ground potential is applied through a transistor.

Claim 17

A nonvolatile semiconductor memory device comprising: a plurality of memory cells which are arranged in a matrix form having rows and columns, each including a control gate, a floating gate, a source and a drain, and holding an information charge in said floating gate; a plurality of bit lines each of which correspond to a column of said memory cells, and connect to the drains of said memory cells in the corresponding column; a plurality of word lines which extend in a direction crossing said bit lines, each of said plurality of word lines correspond to a row of said memory cells, and connect to the control gates of said memory cells in the corresponding row; a plurality of source lines each of which correspond to a row of said memory cells, and connect to the sources of said memory cells in the corresponding row; erasing means which applies a negative high voltage to a selected word line in an erasing operation; and voltage applying means which applies a positive voltage to a substrate region, in which the corresponding memory cell is formed, for a predetermined period of time after application of a negative high voltage to a selected word line in said erasing operation by said erasing means.

Claim 18

A nonvolatile semiconductor memory device comprising: a plurality of memory cells which are arranged in a matrix form having rows and columns, each including a control gate, a floating gate, a source and a drain, and holding an information charge in said floating gate; a plurality of bit lines each of which correspond to a column of said memory cells, and connect to the drains of said memory cells in the corresponding column; a plurality of word lines which extend in a direction crossing said bit lines, each of said plurality of word lines correspond to a row of said memory cells, and connect to the control gates of said memory cells in the corresponding row; a plurality of source lines each of which correspond to a row of said memory cells, and connect to the sources of said memory cells in the corresponding row; erasing means which applies a negative high voltage to a selected word line in an erasing operation; and voltage applying means which applies a positive voltage to a substrate region, in which the corresponding memory cell is formed, for a predetermined period of time after application of a negative high voltage to a selected word line in said erasing operation by said erasing means.

Claim 19

A nonvolatile semiconductor memory device according to claim 13, wherein said substrate region includes a source and a drain.

Claim 20

A nonvolatile semiconductor memory device according to claim 13, wherein said substrate region includes a semiconductor substrate in which said memory cells are formed.

Claim 25

An electrically writable and erasable nonvolatile semiconductor memory device of a flash type comprising: a plurality of memory cells which are arranged in a matrix form having rows and columns, each including a control gate, a floating gate, a source and a drain, and holding an information charge in said floating gate; a plurality of bit lines each of which correspond to a column of said memory cells, and connect to the drains of said memory cells in the corresponding column; a plurality of word lines which extend in a direction crossing said bit lines, each of said plurality of word lines correspond to a row of said memory cells, and connect to the control gates of said memory cells in the corresponding row; a plurality of source lines each of which correspond to a row of said memory cells, and connect to the sources of said memory cells in the corresponding row; a write/read row decoder connected to each of said word lines, for applying a positive-voltage/supply-voltage to a selected word line in response to a signal for selecting one of said word lines in writing/reading operations; an erase row decoder connected to each of said word lines, for applying a negative voltage to a selected word line in response to a signal for selecting one of said word lines in an erasing operation; and a source line switch for grounding the source line connected to the source of a memory cell connecting to a selected word line when said erase row decoder is activated.

Claim 26

An electrically writable and erasable nonvolatile semiconductor memory device of a flash type comprising: a plurality of memory cells which are arranged in a matrix form having rows and columns, each including a control gate, a floating gate, a source and a drain, and holding an information charge in said floating gate; a plurality of bit lines each of which correspond to a column of said memory cells, and connect to the drains of said memory cells in the corresponding column; a plurality of word lines which extend in a direction crossing said bit lines, each of said plurality of word lines correspond to a row of said memory cells, and connect to the control gates of said memory cells in the corresponding row; a plurality of source lines each of which correspond to a row of said memory cells, and connect to the sources of said memory cells in the corresponding row; a write/read row decoder connected to each of said word lines, for applying a positive-voltage/supply-voltage to a selected word line in response to a signal for selecting one of said word lines in writing/reading operations; an erase row decoder connected to each of said word lines, for applying a negative voltage to a selected word line in response to a signal for selecting one of said word lines in an erasing operation; and a source line switch for grounding the source line connected to the source of a memory cell connecting to a selected word line when said erase row decoder is activated.

Claim 27

In a semiconductor memory device comprising a plurality of memory cells arranged in a matrix having rows and columns, each of said memory cells including a control gate, floating gate, source, drain, and holding an information charge in said floating gate; a plurality of bit lines each of which correspond to a column of said memory cells, and connect to the drains of said memory cells in the corresponding column; a plurality of word lines which extend in a direction crossing said bit lines, each of said plurality of word lines correspond to a row of said memory cells, and connect to the control gates of said memory cells in the corresponding row; a plurality of source lines each of which correspond to a row of said memory cells, and connect to the sources of said memory cells in the corresponding row; high voltage generating means connected to each of said word lines and having a capacitor; and erasing means, coupled to said high voltage generating means, said plurality of word lines and plurality of source lines, a method of selectively erasing a selected portion of said plurality of memory cells, comprising the steps of: generating a signal for selecting at least one of said plurality of word lines and at least one of said plurality of source lines corresponding to a selected at least one of said plurality of memory cells to be erased, applying a predetermined clock signal to said capacitor in said high voltage generating means in response to said signal for selecting at least one of said plurality word lines, generating a negative high voltage in said high voltage generating means, applying, with said erasing means, said negative high voltage generated by said high voltage generating means to the at least one word line selected by said selection signal, and grounding, with said erasing means, the at least one source line selected by said selection signal so as to erase the information charge held in the floating gate of the selected memory cell.

Claim 28

In a semiconductor memory device comprising a plurality of memory cells arranged in a matrix having rows and columns, each of said memory cells including a control gate, floating gate, source, drain, and holding an information charge in said floating gate; a plurality of bit lines each of which correspond to a column of said memory cells, and connect to the drains of said memory cells in the corresponding column; a plurality of word lines which extend in a direction crossing said bit lines, each of said plurality of word lines correspond to a row of said memory cells, and connect to the control gates of said memory cells in the corresponding row; a plurality of source lines each of which correspond to a row of said memory cells, and connect to the sources of said memory cells in the corresponding row; high voltage generating means connected to each of said word lines and having a capacitor; and erasing means, coupled to said high voltage generating means, said plurality of word lines and plurality of source lines, a method of selectively erasing a selected portion of said plurality of memory cells, comprising the steps of: generating a signal for selecting at least one of said plurality of word lines and at least one of said plurality of source lines corresponding to a selected at least one of said plurality of memory cells to be erased, applying a predetermined clock signal to said capacitor in said high voltage generating means in response to said signal for selecting at least one of said plurality word lines, generating a negative high voltage in said high voltage generating means, applying, with said erasing means, said negative high voltage generated by said high voltage generating means to the at least one word line selected by said selection signal, and grounding, with said erasing means, the at least one source line selected by said selection signal so as to erase the information charge held in the floating gate of the selected memory cell.

Claim 29

In a semiconductor memory device comprising a plurality of memory cells arranged in a matrix having rows and columns, each of said memory cells including a control gate, floating gate, source, drain, and holding an information charge in said floating gate; a plurality of bit lines each of which correspond to a column of said memory cells, and connect to the drains of said memory cells in the corresponding column; a plurality of word lines which extend in a direction crossing said bit lines, each of said plurality of word lines correspond to a row of said memory cells, and connect to the control gates of said memory cells in the corresponding row; a plurality of source lines each of which correspond to a row of said memory cells, and connect to the sources of said memory cells in the corresponding row; high voltage generating means connected to each of said word lines and having a capacitor; and erasing means, coupled to said high voltage generating means, said plurality of word lines and plurality of source lines, a method of selectively erasing a selected portion of said plurality of memory cells, comprising the steps of: generating a signal for selecting at least one of said plurality of word lines and at least one of said plurality of source lines corresponding to a selected at least one of said plurality of memory cells to be erased, applying a predetermined clock signal to said capacitor in said high voltage generating means in response to said signal for selecting at least one of said plurality word lines, generating a negative high voltage in said high voltage generating means, applying, with said erasing means, said negative high voltage generated by said high voltage generating means to the at least one word line selected by said selection signal, and applying, with said erasing means, a positive voltage to the at least one source line selected by said selection signal so as to erase the information charge held in the floating gate of the selected memory cell.

Claim 30

In a semiconductor memory device comprising a plurality of memory cells arranged in a matrix having rows and columns, each of said memory cells including a control gate, floating gate, source, drain, and holding an information charge in said floating gate; a plurality of bit lines each of which correspond to a column of said memory cells, and connect to the drains of said memory cells in the corresponding column; a plurality of word lines which extend in a direction crossing said bit lines, each of said plurality of word lines correspond to a row of said memory cells, and connect to the control gates of said memory cells in the corresponding row; a plurality of source lines each of which correspond to a row of said memory cells, and connect to the sources of said memory cells in the corresponding row; high voltage generating means connected to each of said word lines and having a capacitor; and erasing means, coupled to said high voltage generating means, said plurality of word lines and plurality of source lines, a method of selectively erasing a selected portion of said plurality of memory cells, comprising the steps of: generating a signal for selecting at least one of said plurality of word lines and at least one of said plurality of source lines corresponding to a selected at least one of said plurality of memory cells to be erased, applying a predetermined clock signal to said capacitor in said high voltage generating means in response to said signal for selecting at least one of said plurality word lines, generating a negative high voltage in said high voltage generating means, applying, with said erasing means, said negative high voltage generated by said high voltage generating means to the at least one word line selected by said selection signal, and applying, with said erasing means, a positive voltage to the at least one source line selected by said selection signal so as to erase the information charge held in the floating gate of the selected memory cell.

Claim 31

In a semiconductor memory device comprising a plurality of memory cells arranged in a matrix having rows and columns, each of said memory cells including a control gate, floating gate, source, drain, and holding an information charge in said floating gate; a plurality of bit lines each of which correspond to a column of said memory cells, and connect to the drains of said memory cells in the corresponding column; a plurality of word lines which extend in a direction crossing said bit lines, each of said plurality of word lines correspond to a row of said memory cells, and connect to the control gates of said memory cells in the corresponding row; a plurality of source lines each of which correspond to a row of said memory cells, and connect to the sources of said memory cells in the corresponding row; a plurality of row decoder means each provided corresponding to each of said word lines; and a plurality of high voltage providing means each provided between each of said row decoding means and each of said word lines, comprising first and second transistors of a first conductivity type connected together in series, and a third transistor of a second conductivity type connected in series with said first and second transistors, a corresponding one of said word lines being connected to a connecting part therefor, a method of selectively erasing a selected portion of said plurality of memory cells, comprising the steps of: generating a signal for selecting at least one of said plurality of word lines and at least one of said plurality of source lines corresponding to a selected at least one of said plurality of memory cells to be erased, generating a signal of a logical high level in said row decoder means in response to a signal for selecting one of said word lines, providing with an output signal of said row decoding means to the gates of each of said first and second transistors, providing a power supply potential to the opposite side of said connecting part of said first transistor, providing a ground voltage to the opposite side of said connecting part of said second transistor, and providing a negative voltage to the gate of said third transistor.

Claim 32

In a semiconductor memory device comprising a plurality of memory cells arranged in a matrix having rows and columns, each of said memory cells including a control gate, floating gate, source, drain, and holding an information charge in said floating gate; a plurality of bit lines each of which correspond to a column of said memory cells, and connect to the drains of said memory cells in the corresponding column; a plurality of word lines which extend in a direction crossing said bit lines, each of said plurality of word lines correspond to a row of said memory cells, and connect to the control gates of said memory cells in the corresponding row; a plurality of source lines each of which correspond to a row of said memory cells, and connect to the sources of said memory cells in the corresponding row; a plurality of row decoder means each provided corresponding to each of said word lines; and a plurality of high voltage providing means each provided between each of said row decoding means and each of said word lines, comprising first and second transistors of a first conductivity type connected together in series, and a third transistor of a second conductivity type connected in series with said first and second transistors, a corresponding one of said word lines being connected to a connecting part therefor, a method of selectively erasing a selected portion of said plurality of memory cells, comprising the steps of: generating a signal for selecting at least one of said plurality of word lines and at least one of said plurality of source lines corresponding to a selected at least one of said plurality of memory cells to be erased, generating a signal of a logical high level in said row decoder means in response to a signal for selecting one of said word lines, providing with an output signal of said row decoding means to the gates of each of said first and second transistors, providing a power supply potential to the opposite side of said connecting part of said first transistor, providing a ground voltage to the opposite side of said connecting part of said second transistor, and providing a negative voltage to the gate of said third transistor.

Claim 33

In a semiconductor memory device comprising a plurality of memory cells arranged in a matrix having rows and columns, each of said memory cells including a control gate, floating gate, source, drain, and holding an information charge in said floating gate; a plurality of bit lines each of which correspond to a column of said memory cells, and connect to the drains of said memory cells in the corresponding column; a plurality of word lines which extend in a direction crossing said bit lines, each of said plurality of word lines correspond to a row of said memory cells, and connect to the control gates of said memory cells in the corresponding row; a plurality of source lines each of which correspond to a row of said memory cells, and connect to the sources of said memory cells in the corresponding row; high voltage generating means connected to each of said word lines and having a capacitor; and erasing means, coupled to said high voltage generating means, said plurality of word lines and plurality of source lines, a method of selectively erasing a selected portion of said plurality of memory cells, comprising the steps of: generating a signal for selecting at least one of said plurality of word lines and at least one of said plurality of source lines corresponding to a selected at least one of said plurality of memory cells to be erased, applying a predetermined clock signal to said capacitor in said high voltage generating means in response to said signal for selecting at least one of said plurality word lines, generating a negative high voltage in said high voltage generating means, applying, in an erasing step, with said erasing means said negative high voltage generated by said high voltage generating means to said selected at least one of said plurality of word lines, a positive voltage to the selected at least one of said plurality of source lines, and a positive voltage to unselected word lines, and simultaneously grounding said bit lines and said source lines after completion of said erasing step by said erasing means.

Claim 34

In a semiconductor memory device comprising a plurality of memory cells arranged in a matrix having rows and columns, each of said memory cells including a control gate, floating gate, source, drain, and holding an information charge in said floating gate; a plurality of bit lines each of which correspond to a column of said memory cells, and connect to the drains of said memory cells in the corresponding column; a plurality of word lines which extend in a direction crossing said bit lines, each of said plurality of word lines correspond to a row of said memory cells, and connect to the control gates of said memory cells in the corresponding row; a plurality of source lines each of which correspond to a row of said memory cells, and connect to the sources of said memory cells in the corresponding row; high voltage generating means connected to each of said word lines and having a capacitor; and erasing means, coupled to said high voltage generating means, said plurality of word lines and plurality of source lines, a method of selectively erasing a selected portion of said plurality of memory cells, comprising the steps of: generating a signal for selecting at least one of said plurality of word lines and at least one of said plurality of source lines corresponding to a selected at least one of said plurality of memory cells to be erased, applying a predetermined clock signal to said capacitor in said high voltage generating means in response to said signal for selecting at least one of said plurality word lines, generating a negative high voltage in said high voltage generating means, applying, in an erasing step, with said erasing means said negative high voltage generated by said high voltage generating means to said selected at least one of said plurality of word lines, a positive voltage to the selected at least one of said plurality of source lines, and a positive voltage to unselected word lines, and simultaneously grounding said bit lines and said source lines after completion of said erasing step by said erasing means.

Claim 35

In a semiconductor memory device comprising a plurality of memory cells arranged in a matrix having rows and columns, each of said memory cells including a control gate, floating gate, source, drain, and holding an information charge in said floating gate; a plurality of bit lines each of which correspond to a column of said memory cells, and connect to the drains of said memory cells in the corresponding column; a plurality of word lines which extend in a direction crossing said bit lines, each of said plurality of word lines correspond to a row of said memory cells, and connect to the control gates of said memory cells in the corresponding row; a plurality of source lines each of which correspond to a row of said memory cells, and connect to the sources of said memory cells in the corresponding row; high voltage generating means connected to each of said word lines and having a capacitor; and erasing means, coupled to said high voltage generating means, said plurality of word lines and plurality of source lines, a method of selectively erasing a selected portion of said plurality of memory cells, comprising the steps of: generating a signal for selecting at least one of said plurality of word lines and at least one of said plurality of source lines corresponding to a selected at least one of said plurality of memory cells to be erased, applying a predetermined clock signal to said capacitor in said high voltage generating means in response to said signal for selecting at least one of said plurality word lines, generating a negative high voltage in said high voltage generating means, applying, with said erasing means, said negative high voltage generated by said high voltage generating means to the at least one word line selected by said selection signal, and applying a positive voltage to a substrate region, in which a selected memory cell is formed, for a predetermined period of time after application of a negative high voltage to a selected word line.

Claim 36

In a semiconductor memory device comprising a plurality of memory cells arranged in a matrix having rows and columns, each of said memory cells including a control gate, floating gate, source, drain, and holding an information charge in said floating gate; a plurality of bit lines each of which correspond to a column of said memory cells, and connect to the drains of said memory cells in the corresponding column; a plurality of word lines which extend in a direction crossing said bit lines, each of said plurality of word lines correspond to a row of said memory cells, and connect to the control gates of said memory cells in the corresponding row; a plurality of source lines each of which correspond to a row of said memory cells, and connect to the sources of said memory cells in the corresponding row; high voltage generating means connected to each of said word lines and having a capacitor; and erasing means, coupled to said high voltage generating means, said plurality of word lines and plurality of source lines, a method of selectively erasing a selected portion of said plurality of memory cells, comprising the steps of: generating a signal for selecting at least one of said plurality of word lines and at least one of said plurality of source lines corresponding to a selected at least one of said plurality of memory cells to be erased, applying a predetermined clock signal to said capacitor in said high voltage generating means in response to said signal for selecting at least one of said plurality word lines, generating a negative high voltage in said high voltage generating means, applying, with said erasing means, said negative high voltage generated by said high voltage generating means to the at least one word line selected by said selection signal, and applying a positive voltage to a substrate region, in which a selected memory cell is formed, for a predetermined period of time after application of a negative high voltage to a selected word line.

Claim 37

In an electrically writable and erasable nonvolatile semiconductor memory device of a flash type comprising a plurality of memory cells arranged in a matrix having rows and columns, each of said memory cells including a control gate, floating gate, source, drain, and holding an information charge in said floating gate; a plurality of bit lines each of which correspond to a column of said memory cells, and connect to the drains of said memory cells in the corresponding column; a plurality of word lines which extend in a direction crossing said bit lines, each of said plurality of word lines correspond to a row of said memory cells, and connect to the control gates of said memory cells in the corresponding row; a plurality of source lines each of which correspond to a row of said memory cells, and connect to the sources of said memory cells in the corresponding row; a write/read row decoder connected to each of said word lines; an erase row decoder connected to each of said word lines; and a source line switch connected to ground and said plurality of source lines, a method of selectively erasing a selected portion of said plurality of memory cells, comprising the steps of: generating a signal for selecting at least one of said plurality of word lines and at least one of said plurality of source lines corresponding to a selected at least one of said plurality of memory cells to be erased, applying, with said write/read row decoder, a positive-voltage/supply-voltage to a selected word line in response to a signal for selecting one of said word lines in writing/reading operations, applying, with said erase row decoder, a negative voltage to a selected word line in response to a signal for selecting one of said word lines in an erasing operation, and grounding, with said source line switch, the selected at least one of said plurality of source lines when said erase row decoder is activated.

Claim 38

In an electrically writable and erasable nonvolatile semiconductor memory device of a flash type comprising a plurality of memory cells arranged in a matrix having rows and columns, each of said memory cells including a control gate, floating gate, source, drain, and holding an information charge in said floating gate; a plurality of bit lines each of which correspond to a column of said memory cells, and connect to the drains of said memory cells in the corresponding column; a plurality of word lines which extend in a direction crossing said bit lines, each of said plurality of word lines correspond to a row of said memory cells, and connect to the control gates of said memory cells in the corresponding row; a plurality of source lines each of which correspond to a row of said memory cells, and connect to the sources of said memory cells in the corresponding row; a write/read row decoder connected to each of said word lines; an erase row decoder connected to each of said word lines; and a source line switch connected to ground and said plurality of source lines, a method of selectively erasing a selected portion of said plurality of memory cells, comprising the steps of: generating a signal for selecting at least one of said plurality of word lines and at least one of said plurality of source lines corresponding to a selected at least one of said plurality of memory cells to be erased, applying, with said write/read row decoder, a positive-voltage/supply-voltage to a selected word line in response to a signal for selecting one of said word lines in writing/reading operations, applying, with said erase row decoder, a negative voltage to a selected word line in response to a signal for selecting one of said word lines in an erasing operation, and grounding, with said source line switch, the selected at least one of said plurality of source lines when said erase row decoder is activated.