US5401665A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method of fabricating a field-effect transistor over gate electrode
Assignee: STANFORD UNIVERSITY OTL LLC
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Filing: 1994-01-05
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Granted: 1995-03-28
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Expires: 2014-01-05
Abstract
Abstract A field-effect transistor in which a metal gate (14) is defined on top of an insulating substrate (12). A free-standing semiconductor thin film (16), obtained by the epitaxial lift-off process, is bonded to both the top of the metal gate and the insulating substrate. Electrodes (20, 22) attached to the top of ends of the semiconductor film complete the transistor.
Inventors
- 👤 Winston K. Chan
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-29 17:50
CPC Classifications
H; H10; H10D; H10D30/00; H10D30/01; H10D30/061; H10D30/0612; H10D30/80; H10D30/87; H10D30/875; Y; Y10; Y10S; Y10S148/00; Y10S148/012; Y10S148/15
Claims Analysis
Total Claims: 14
Claim 1
Independent Claim
76 words
A method of fabricating a transistor comprising the steps of forming a conducting body on an upper surface of an insulating substrate so as to extend at least in part above the upper surface of the insulating substrate, forming a free-standing semiconductor film, and bonding said semiconductor film to an upper surface of the conducting body and to two portions of the upper surface of the insulating substrate on opposing lateral sides of the conducting body.
Claim 2
Independent Claim
76 words
A method of fabricating a transistor comprising the steps of forming a conducting body on an upper surface of an insulating substrate so as to extend at least in part above the upper surface of the insulating substrate, forming a free-standing semiconductor film, and bonding said semiconductor film to an upper surface of the conducting body and to two portions of the upper surface of the insulating substrate on opposing lateral sides of the conducting body.
Claim 3
Independent Claim
98 words
A method of fabricating a transistor comprising the steps of forming a conducting body on an upper surface of an insulating substrate so as to extend at least in part above the upper surface of the insulating substrate, forming a free-standing semiconductor film, bending said semiconductor film, and bonding said semiconductor film to an upper surface of the conducting body and to two portions of the upper surface of the insulating substrate on opposing later sides of the conducting body, so that said film is stressed by the conducting body above the upper surface of the insulating substrate.
Claim 4
Independent Claim
98 words
A method of fabricating a transistor comprising the steps of forming a conducting body on an upper surface of an insulating substrate so as to extend at least in part above the upper surface of the insulating substrate, forming a free-standing semiconductor film, bending said semiconductor film, and bonding said semiconductor film to an upper surface of the conducting body and to two portions of the upper surface of the insulating substrate on opposing later sides of the conducting body, so that said film is stressed by the conducting body above the upper surface of the insulating substrate.
Claim 5
Dependent Claim
25 words
The method in accordance with claim 2 further comprising attaching electrical contacts to opposite ends of said thin film with respect to said conducting body.
Claim 6
Independent Claim
89 words
A method of fabricating a transistor comprising the steps of forming a conducting body on an upper surface of an insulating substrate so as to extend at least in part above the upper surface of the insulating substrate, forming a free-standing thin semiconductor film, and bonding said thin semiconductor film to said conducting body and to two portions of the upper surface of the insulating substrate so as to form lacunae between said conducting body and said portions and over which lacunae said thin film semiconductor film hangs suspended.
Claim 7
Independent Claim
89 words
A method of fabricating a transistor comprising the steps of forming a conducting body on an upper surface of an insulating substrate so as to extend at least in part above the upper surface of the insulating substrate, forming a free-standing thin semiconductor film, and bonding said thin semiconductor film to said conducting body and to two portions of the upper surface of the insulating substrate so as to form lacunae between said conducting body and said portions and over which lacunae said thin film semiconductor film hangs suspended.
Claim 8
Dependent Claim
41 words
The method in accordance with claim 4 wherein said bonding step includes providing a bent shape to said thin semiconductor film so that said thin semiconductor film is stressed by said conducting body above said upper surface of said insulating substrate.
Claim 9
Independent Claim
83 words
A method of fabricating a transistor comprising the steps of forming a conducting body on a surface of an insulating substrate, growing a semiconducting thin film on a crystalline substrate, freeing said semiconducting thin film from said crystalline substrate so as to provide a free-standing semiconducting thin film, and bonding the free-standing semiconducting thin film so provided to an upper surface of said conducting body and to two regions of said surface of said insulating substrate on opposing sides of said conducting body.
Claim 10
Independent Claim
83 words
A method of fabricating a transistor comprising the steps of forming a conducting body on a surface of an insulating substrate, growing a semiconducting thin film on a crystalline substrate, freeing said semiconducting thin film from said crystalline substrate so as to provide a free-standing semiconducting thin film, and bonding the free-standing semiconducting thin film so provided to an upper surface of said conducting body and to two regions of said surface of said insulating substrate on opposing sides of said conducting body.
Claim 11
Independent Claim
129 words
A method of forming a transistor comprising the steps of forming a conducting body on an upper surface of an insulating substrate, said conducting body extending in a first direction along said substrate and extending upwardly at least in part above said upper surface, forming a free standing semiconductor film, and bonding said semiconductor thin film to an upper surface of said conducting body and to two portions of said upper surface of said insulating substrate on opposing lateral sides of said conducting body, said thin film extending from said two portions over said upper surface of said insulating body without touching said upper surface of said insulating body whereby lacunae are formed between said conducting body and said portions and over which lacunae said thin film hangs suspended.
Claim 12
Independent Claim
129 words
A method of forming a transistor comprising the steps of forming a conducting body on an upper surface of an insulating substrate, said conducting body extending in a first direction along said substrate and extending upwardly at least in part above said upper surface, forming a free standing semiconductor film, and bonding said semiconductor thin film to an upper surface of said conducting body and to two portions of said upper surface of said insulating substrate on opposing lateral sides of said conducting body, said thin film extending from said two portions over said upper surface of said insulating body without touching said upper surface of said insulating body whereby lacunae are formed between said conducting body and said portions and over which lacunae said thin film hangs suspended.
Claim 13
Dependent Claim
35 words
The method in accordance with claim 7 wherein said insulating substrate includes a recess in said upper surface thereof and said step of forming said conducting body includes positioning said conducting body in said recess.
Claim 14
Dependent Claim
39 words
The method in accordance with claim 7 wherein said conducting body comprises a crystalline substrate having a wedge and said step of forming said conducting body includes forming a conductive coating over a top and sides of said wedge.
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