Patent US5399515A successfully refreshed from Google Patents.
US5399515A
Expired / Lapsed
US
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Method of fabricating a silicon carbide vertical MOSFET and device
Assignee: NXP USA Inc
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Filing: 1993-07-12
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Granted: 1995-03-21
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Expires: 2013-07-12
Abstract
Abstract A silicon carbide LOCOS vertical MOSFET formed on a silicon carbide substrate with portions of epitaxial layers defining the various transistor electrodes, rather than defining the electrodes with implants and diffusion. Because of the low diffusion rate in silicon carbide, the LOCOS operation can be performed after the doped epitaxial layers are formed.
Inventors
- 👤 Kenneth L. Davis
- 👤 Charles E. Weitzel
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-31 10:08
CPC Classifications
H; H10; H10D; H10D30/00; H10D30/60; H10D30/64; H10D30/66; H10D30/668; H10D12/00; H10D12/01; H10D12/031; H10D30/01; H10D30/021; H10D30/028; H10D30/0291; H10D30/0297; H10D62/00; H10D62/80; H10D62/83; H10D62/832; H10D62/8325; Y; Y10; Y10S; Y10S438/00; Y10S438/931
Claims Analysis
Total Claims: 19
Claim 1
Independent Claim
194 words
A method of fabricating a silicon carbide local oxidation vertical FET comprising the steps of: providing a silicon carbide substrate of a first conductivity type with a surface; forming a first epitaxial layer of the first conductivity type on the surface of the substrate, which said first epitaxial layer is lightly doped compared to the substrate and includes a surface; forming a second epitaxial layer of a second conductivity type on the surface of the first epitaxial layer; forming a third layer of the first conductivity type adjacent the surface of the second epitaxial layer, which said third layer is formed thinner than the second epitaxial layer; forming an opening in the third layer and a portion of the second epitaxial layer from the surface of the third layer; growing a local oxidation layer in the opening, the local oxidation layer being sufficiently thick to extend through the second epitaxial layer into communication with the first epitaxial layer and defining a gate region; forming a gate contact in overlying relationship to the gate region; defining a source region; and forming a source contact on the defined source region in contact with the third layer.
Claim 2
Independent Claim
194 words
A method of fabricating a silicon carbide local oxidation vertical FET comprising the steps of: providing a silicon carbide substrate of a first conductivity type with a surface; forming a first epitaxial layer of the first conductivity type on the surface of the substrate, which said first epitaxial layer is lightly doped compared to the substrate and includes a surface; forming a second epitaxial layer of a second conductivity type on the surface of the first epitaxial layer; forming a third layer of the first conductivity type adjacent the surface of the second epitaxial layer, which said third layer is formed thinner than the second epitaxial layer; forming an opening in the third layer and a portion of the second epitaxial layer from the surface of the third layer; growing a local oxidation layer in the opening, the local oxidation layer being sufficiently thick to extend through the second epitaxial layer into communication with the first epitaxial layer and defining a gate region; forming a gate contact in overlying relationship to the gate region; defining a source region; and forming a source contact on the defined source region in contact with the third layer.
Claim 3
Dependent Claim
38 words
A method of fabricating a silicon carbide local oxidation vertical FET as claimed in claim 1 wherein the step of forming a third layer of the first conductivity type includes implanting a dopant into the second epitaxial layer.
Claim 4
Dependent Claim
22 words
A method of fabricating a silicon carbide local oxidation vertical FET as claimed in claim 2 wherein the implanting includes ion implanting.
Claim 5
Dependent Claim
45 words
A method of fabricating a silicon carbide local oxidation vertical FET as claimed in claim 1 wherein the step of forming a third layer of the first conductivity type includes epitaxially forming the third layer of the first conductivity type on the second epitaxial layer.
Claim 6
Dependent Claim
59 words
A method of fabricating a silicon carbide local oxidation vertical FET as claimed in claim 3 wherein the step of forming an opening includes the step of patterning a protective layer capable of withstanding plasma etching on the third layer, the protective layer including an open area, and forming an opening coinciding with the open area by plasma etching.
Claim 7
Dependent Claim
45 words
A method of fabricating a silicon carbide local oxidation vertical FET as claimed in claim 5 wherein the step of patterning a protective layer includes forming a silicon oxide layer on the third layer and forming a nitride layer on the layer of silicon oxide.
Claim 8
Dependent Claim
56 words
A method of fabricating a silicon carbide local oxidation vertical FET as claimed in claim 1 wherein the step of forming a gate contact includes the steps of forming a layer of gate oxide on the third layer and on the defined gate region and forming a conductive layer in overlying relationship to the gate region.
Claim 9
Dependent Claim
44 words
A method of fabricating a silicon carbide local oxidation vertical FET as claimed in claim 7 wherein the step of forming a layer of gate oxide on the third layer and on the defined gate region includes removing some of the local oxidation layer.
Claim 10
Dependent Claim
52 words
A method of fabricating a silicon carbide local oxidation vertical FET as claimed in claim 7 wherein the step of forming a layer of gate oxide on the third layer and on the defined gate region includes the steps of removing the local oxidation layer and growing a new gate oxide layer.
Claim 11
Dependent Claim
40 words
A method of fabricating a silicon carbide local oxidation vertical FET as claimed in claim 7 including in addition, increasing the thickness of the layer of gate oxide not covered by the gate contact to provide passivation of the FET.
Claim 12
Dependent Claim
32 words
A method of fabricating a silicon carbide local oxidation vertical FET as claimed in claim 1 including in addition, forming a drain contact on a second surface of the silicon carbide substrate.
Claim 13
Independent Claim
281 words
A method of fabricating a silicon carbide local oxidation vertical MOSFET comprising the steps of: providing a silicon carbide substrate of a first conductivity type with a surface; forming a first epitaxial layer of the first conductivity type on the surface of the substrate, which said first epitaxial layer is lightly doped compared to the substrate and includes a surface; forming a second epitaxial layer of a second conductivity type on the surface of the first epitaxial layer; forming a third layer of the first conductivity type adjacent the surface of the second epitaxial layer, which said third layer is formed thinner than the second epitaxial layer; providing a plasma etch mask on the surface of the third layer for protecting the third layer, the plasma etch mask having an open area defining a gate region; using the plasma etch mask to etch an opening through the third layer and the second epitaxial layer from the surface of the third layer so as to at least communicate with the first epitaxial layer; growing a local oxidation layer in the opening, the local oxidation layer being sufficiently thick to extend through the second epitaxial layer into communication with the first epitaxial layer and defining said gate region; removing at least a portion of the mask; forming a layer of gate oxide on the third layer and the defined gate region; forming a gate contact on the layer of gate oxide in overlying relationship to the gate region; defining a source region adjacent the opening by removing a portion of the layer of gate oxide; and forming a source contact of metal on the defined source region in contact with the third layer.
Claim 14
Independent Claim
281 words
A method of fabricating a silicon carbide local oxidation vertical MOSFET comprising the steps of: providing a silicon carbide substrate of a first conductivity type with a surface; forming a first epitaxial layer of the first conductivity type on the surface of the substrate, which said first epitaxial layer is lightly doped compared to the substrate and includes a surface; forming a second epitaxial layer of a second conductivity type on the surface of the first epitaxial layer; forming a third layer of the first conductivity type adjacent the surface of the second epitaxial layer, which said third layer is formed thinner than the second epitaxial layer; providing a plasma etch mask on the surface of the third layer for protecting the third layer, the plasma etch mask having an open area defining a gate region; using the plasma etch mask to etch an opening through the third layer and the second epitaxial layer from the surface of the third layer so as to at least communicate with the first epitaxial layer; growing a local oxidation layer in the opening, the local oxidation layer being sufficiently thick to extend through the second epitaxial layer into communication with the first epitaxial layer and defining said gate region; removing at least a portion of the mask; forming a layer of gate oxide on the third layer and the defined gate region; forming a gate contact on the layer of gate oxide in overlying relationship to the gate region; defining a source region adjacent the opening by removing a portion of the layer of gate oxide; and forming a source contact of metal on the defined source region in contact with the third layer.
Claim 15
Dependent Claim
51 words
A method of fabricating a silicon carbide local oxidation vertical MOSFET as claimed in claim 12 wherein the step of forming a third layer of the first conductivity type includes heavily doping the third layer compared to the first epitaxial layer by ion implanting a dopant into the second epitaxial layer.
Claim 16
Dependent Claim
45 words
A method of fabricating a silicon carbide local oxidation vertical MOSFET as claimed in claim 12 wherein the step of forming a third layer of the first conductivity type includes epitaxially forming the third layer of the first conductivity type on the second epitaxial layer.
Claim 17
Dependent Claim
46 words
A method of fabricating a silicon carbide local oxidation vertical MOSFET as claimed in claim 12 wherein the step of providing a plasma etch mask includes forming a silicon oxide layer on the third layer and forming a nitride layer on the layer of silicon oxide.
Claim 18
Dependent Claim
65 words
A method of fabricating a silicon carbide local oxidation vertical MOSFET as claimed in claim 15 wherein the step of removing at least a portion of the plasma etch mask includes removing the nitride layer and the step of forming a layer of gate oxide on the third layer and on the defined gate region includes removing some of the local oxidation of silicon layer.
Claim 19
Dependent Claim
32 words
A method of fabricating a silicon carbide local oxidation vertical MOSFET as claimed in claim 12 including in addition, forming a drain contact on a second surface of the silicon carbide substrate.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1998-03-20 | 1998-09-19 | 1999-03-21 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2002-03-20 | 2002-09-19 | 2003-03-21 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2006-03-20 | 2006-09-19 | 2007-03-21 | $7700.00 | Window Closed / Lapsed |