Claims Analysis
Total Claims: 4
Claim 1
Independent Claim
222 words
A semiconductor memory device including a plurality of memory cells formed in a semiconductor substrate of a first conductivity type, each of said memory cells comprising a transistor and a capacitor connected to said transistor; said transistor including first and second regions of a second conductivity type selectively formed in said semiconductor substrate to define a channel region of said transistor therebetween, said second conductivity type being opposite to said first conductivity type; said capacitor including a trench selectively formed in said semiconductor, said trench having a side surface and a bottom surface, a third region of said second conductivity type formed in said semiconductor substrate along said side and bottom surfaces of said trench in contact with said first region of said transistor, an insulating film formed on said side and bottom surfaces of said trench, a hole formed in a part of said insulating film to expose a part of said third region, a first conductive layer formed in contact with said part of said third region through said hole and extended over said insulating film, said third region and said first conductive layer serving as a first electrode of said capacitor, a dielectric film formed on said first conductive layer, and a second conductive layer formed on said dielectric film and serving as a second electrode of said capacitor.
Claim 2
Dependent Claim
222 words
A semiconductor memory device including a plurality of memory cells formed in a semiconductor substrate of a first conductivity type, each of said memory cells comprising a transistor and a capacitor connected to said transistor; said transistor including first and second regions of a second conductivity type selectively formed in said semiconductor substrate to define a channel region of said transistor therebetween, said second conductivity type being opposite to said first conductivity type; said capacitor including a trench selectively formed in said semiconductor, said trench having a side surface and a bottom surface, a third region of said second conductivity type formed in said semiconductor substrate along said side and bottom surfaces of said trench in contact with said first region of said transistor, an insulating film formed on said side and bottom surfaces of said trench, a hole formed in a part of said insulating film to expose a part of said third region, a first conductive layer formed in contact with said part of said third region through said hole and extended over said insulating film, said third region and said first conductive layer serving as a first electrode of said capacitor, a dielectric film formed on said first conductive layer, and a second conductive layer formed on said dielectric film and serving as a second electrode of said capacitor.
Claim 3
Dependent Claim
89 words
The memory device as claimed in claim 1, wherein said third region comprises a high-impurity concentration region formed in said semiconductor substrate at said bottom surface of said trench and a low-impurity-concentration region formed in said semiconductor substrate at said side surface of said trench in contact with said first region, said hole being formed in a portion of said insulating film covering said bottom surface of said trench to thereby expose said high-impurity-concentration region, and said first conductive layer being connected to said high-impurity-concentration region through said hole.
Claim 4
Dependent Claim
90 words
The memory device as claimed in claim 1, wherein said transistor further includes a gate electrode formed on a gate insulating film covering said channel region and an insulating layer covering said first region and said gate electrode, said first conductive layer being elongated over said insulating layer to provide a first elongated portion, said dielectric film being elongated over said first elongated portion of said first conductive film to provide a second elongated portion, and said second electrode being elongated over said second elongated portion of said dielectric film.