Patent US5386130A successfully refreshed from Google Patents.
US5386130A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Semiconductor device comprising a broadband and high-gain monolithic integrated circuit for a distributed amplifier
Assignee: ST Ericsson SA
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Filing: 1993-11-02
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Granted: 1995-01-31
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Expires: 2013-11-02
Abstract
Abstract Semiconductor device including a distributed-type monolithic integrated circuit on a substrate, operating in the high frequency and/or microwave range, this distributed circuit having a plurality of coupled stages each having at least a transistor with a first electrode being AC connected to ground. The first electrode is connected to ground by two branches, a first branch being connected directly to a first ground stub and a second branch being connected to a second ground stub through a resistor.
Inventors
- 👤 Patrice Gamand
- 👤 Christian Caux
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-05 16:10
CPC Classifications
H; H03; H03F; H03F3/00; H03F3/60; H03F3/605; H03F3/607
Claims Analysis
Total Claims: 12
Claim 1
Independent Claim
88 words
A semiconductor device comprising a distributed-type monolithic integrated circuit disposed on a substrate for operating at frequencies lying within at least one of a high frequency band and a microwave-frequency band, said circuit including a plurality of coupled stages each having a transistor including first and second electrodes, each said first electrode being AC-coupled to ground through first and second branches, said first branch being directly electrically connected to a first ground stub and said second branch being electrically connected to a second ground stub through a resistor.
Claim 2
Dependent Claim
88 words
A semiconductor device comprising a distributed-type monolithic integrated circuit disposed on a substrate for operating at frequencies lying within at least one of a high frequency band and a microwave-frequency band, said circuit including a plurality of coupled stages each having a transistor including first and second electrodes, each said first electrode being AC-coupled to ground through first and second branches, said first branch being directly electrically connected to a first ground stub and said second branch being electrically connected to a second ground stub through a resistor.
Claim 3
Dependent Claim
91 words
A semiconductor device as in claim 1 where the plurality of coupled stages include first and second stages including respective first and second ones of said transistors which are disposed adjacent to each other and share a common ground conductor including: a. a first portion comprising the first ground stub which is electrically connected to the first branch of the second transistor; and b. a second portion comprising the second ground stub which is electrically connected to the second branch of the first transistor through a respective one of said resistors.
Claim 4
Dependent Claim
57 words
A semiconductor device as in claim 2 where the circuit comprises an amplifier circuit including said plurality of coupled stages, said transistor in each said stage comprising a field-effect transistor having a source electrode comprising the first electrode, a gate electrode electrically connected to a gate line, and a drain electrode electrically connected to a drain line.
Claim 5
Dependent Claim
52 words
A semiconductor device as in claim 3 where, for each said field-effect transistor, the respective source, gate, and drain electrodes are interdigitated, said source electrode including first and second source-electrode stubs comprising said first and second branches, respectively, said gate and drain electrodes being disposed between said first and second source-electrode stubs.
Claim 6
Dependent Claim
23 words
A semiconductor device as in claim 4 where each said resistor and an inductance of each said ground stub have predetermined low values.
Claim 7
Dependent Claim
74 words
A semiconductor device as in claim 4 where: a. the common ground conductor is disposed between the first source-electrode stub of the second transistor and the second source-electrode stub of the first transistor; and b. the resistor through which the second portion of said common ground conductor is electrically connected to the second source-electrode stub of the first transistor has portions which overlap respective portions of said second portion and said second source-electrode stub.
Claim 8
Dependent Claim
28 words
A semiconductor device as in claim 3 where the drain electrode of each said field-effect transistor is electrically connected to the drain line through a further respective transistor.
Claim 9
Dependent Claim
49 words
A semiconductor device as in claim 1 or 2 where the circuit is formed in microstrip on one side of a substrate which has a ground plane on an opposite side thereof, said substrate including via holes through which said ground stubs are electrically connected to said ground plane.
Claim 10
Dependent Claim
22 words
A semiconductor device as in claim 8 where the substrate comprises a material selected from the III-V group of the periodic table.
Claim 11
Dependent Claim
14 words
A semiconductor device as in claim 9 where the substrate material comprises gallium arsenide.
Claim 12
Dependent Claim
15 words
A semiconductor device as in claim 1 or 2 where the circuit comprises a mixer.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1998-01-30 | 1998-08-01 | 1999-01-31 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2002-01-30 | 2002-08-01 | 2003-01-31 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2006-01-30 | 2006-08-01 | 2007-01-31 | $7700.00 | Window Closed / Lapsed |