Claims Analysis
Total Claims: 11
Claim 1
Independent Claim
195 words
A structure in an integrated circuit, comprising: a conductive element on an underlying region in the integrated circuit; a first insulating layer overlying the underlying region and the conductive element, wherein the first insulating layer has an upper surface, and has higher and lower topographical regions therein; a layer of planarizing material which fills in the lower topographical regions of the first insulating layer, such layer having a planar upper surface, wherein the planarizing material layer upper surface is higher than the first insulating layer upper surface over the conductive element; an opening through the planarizing material layer, and partway through the first insulating layer, over the conductive element; a second insulating layer overlying the layer of planarizing material, and overlying the first insulating layer in the opening; wherein said first and second insulating layers each has a different composition than said planarizing layer; and a second opening through the first and second insulating layers exposing a portion of the conductive element, wherein the second opening is smaller than, and located within, the first opening, and wherein the planarizing material is separated from the second opening by portions of the first and second insulating layers.
Claim 2
Dependent Claim
195 words
A structure in an integrated circuit, comprising: a conductive element on an underlying region in the integrated circuit; a first insulating layer overlying the underlying region and the conductive element, wherein the first insulating layer has an upper surface, and has higher and lower topographical regions therein; a layer of planarizing material which fills in the lower topographical regions of the first insulating layer, such layer having a planar upper surface, wherein the planarizing material layer upper surface is higher than the first insulating layer upper surface over the conductive element; an opening through the planarizing material layer, and partway through the first insulating layer, over the conductive element; a second insulating layer overlying the layer of planarizing material, and overlying the first insulating layer in the opening; wherein said first and second insulating layers each has a different composition than said planarizing layer; and a second opening through the first and second insulating layers exposing a portion of the conductive element, wherein the second opening is smaller than, and located within, the first opening, and wherein the planarizing material is separated from the second opening by portions of the first and second insulating layers.
Claim 3
Dependent Claim
13 words
The structure of claim 1, wherein said underlying region comprises a semiconductor substrate.
Claim 4
Dependent Claim
12 words
The structure of claim 1, wherein said conductive element comprises metal interconnect.
Claim 5
Dependent Claim
13 words
The structure of claim 1, wherein said conductive element comprises polycrystalline silicon interconnect.
Claim 6
Dependent Claim
15 words
The structure of claim 1, wherein said first insulating layer comprises a layer of oxide.
Claim 7
Dependent Claim
14 words
The structure of claim 1, wherein said layer of planarizing comprises spin on glass.
Claim 8
Dependent Claim
15 words
The structure of claim 1, wherein said second insulating layer comprises a layer of oxide.
Claim 9
Dependent Claim
34 words
The structure of claim 1, further comprising a conductive layer overlying portions of said second insulating layer and extending into said second opening, wherein the conductive layer makes electrical contact with said conductive element.
Claim 10
Dependent Claim
26 words
The structure of claim 1, wherein the enlarged, etched out region is centered over the one of the conductive elements which is exposed through the opening.
Claim 11
Dependent Claim
16 words
The structure of claim 9, wherein the opening is centered within the enlarged, etched out, region.