Patent US5384152A successfully refreshed from Google Patents.
US5384152A
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US
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Method for forming capacitors with roughened single crystal plates
Assignee: GlobalFoundries Inc
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Filing: 1993-06-01
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Granted: 1995-01-24
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Expires: 2013-06-01
Abstract
Abstract A capacitor is provided having a substrate and a first capacitor plate including a lattice mismatched crystalline material is formed over and supported by a surface of the substrate. A layer of insulating material is formed over and supported by the first capacitor plate. A second capacitor plate including a layer of conductive material is formed over and supported by the layer of insulating material.
Inventors
- 👤 Jack C. Chu
- 👤 Louis Lu-Chen Hsu
- 👤 Toshio Mii
- 👤 Joseph F. Shepard
- 👤 Scott R. Stiffler
- 👤 Manu J. Tejwani
- 👤 Edward J. Vishnesky
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-29 17:10
CPC Classifications
H; H10; H10D; H10D1/00; H10D1/60; H10D1/68; H10D1/692; H10D1/711; H10D1/712; H10D1/62; H10D1/66; Y; Y10; Y10S; Y10S438/00; Y10S438/964
Claims Analysis
Total Claims: 14
Claim 1
Independent Claim
94 words
A method of forming a capacitor comprising the steps of: providing a substrate of a first material; forming by heteroepitaxial growth a roughened layer of a crystalline material over a surface of said substrate, said crystalline material being lattice mismatched with respect to said first material; forming a first layer of conductive material over said roughened layer to form a first capacitor plate; forming a layer of insulating material over said first capacitor plate; and forming a second layer of conductive material over said layer of insulating material to form a second capacitor plate.
Claim 2
Independent Claim
94 words
A method of forming a capacitor comprising the steps of: providing a substrate of a first material; forming by heteroepitaxial growth a roughened layer of a crystalline material over a surface of said substrate, said crystalline material being lattice mismatched with respect to said first material; forming a first layer of conductive material over said roughened layer to form a first capacitor plate; forming a layer of insulating material over said first capacitor plate; and forming a second layer of conductive material over said layer of insulating material to form a second capacitor plate.
Claim 3
Dependent Claim
21 words
The method of claim 1 wherein said first material is selected from the group consisting essentially of silicon and silicon dioxide.
Claim 4
Dependent Claim
25 words
The method of claim 2 wherein said lattice mismatched crystalline material is selected from the group consisting essentially of germanium, gallium arsenide and metal silicides.
Claim 5
Dependent Claim
42 words
The method of claim 3 wherein: said crystalline material comprises germanium; and said step of forming by heteroepitaxial growth is performed by chemical vapor deposition at a pressure in the range of 1-50 mTorr and a temperature greater than 400 degrees centigrade.
Claim 6
Dependent Claim
33 words
The method of claim 2 wherein said layer of insulating material and said first layer of conductive material are sufficiently thin to replicate the roughness of said roughened layer of second crystalline material.
Claim 7
Dependent Claim
47 words
The method of claim 5 wherein said layer of insulating material is selected from the group consisting essentially of silicon dioxide, a composite of oxide and nitride layers, and a composite of oxide, nitride, and oxide layers having an effective thickness of less than about 100 angstroms.
Claim 8
Dependent Claim
34 words
The method of claim 1 and further including the step of connecting at least one plate of said capacitor to a semiconductor device for selectively storing and removing an electrical charge from said capacitor.
Claim 9
Dependent Claim
19 words
The method of claim 1 wherein said surface of said substrate comprises a trench surface recessed within said substrate.
Claim 10
Dependent Claim
43 words
The method of claim 5 wherein said trench includes sidewalls and a base and wherein at least a portion of said trench sidewalls are coated with a dielectric material prior to the formation of said roughened layer of a lattice mismatched crystalline material.
Claim 11
Dependent Claim
30 words
The method of claim 9 wherein said step of forming said roughened layer by heteroepitaxial growth is performed by the chemical vapor deposition of a mixture of germane and diborane.
Claim 12
Dependent Claim
14 words
The method of claim 1 wherein said surface said substrate comprises a plateau surface.
Claim 13
Dependent Claim
32 words
The method of claim 4 wherein said step of forming said first layer of conductive material includes depositing in-situ doped polycrystalline silicon by chemical vapor deposition to a thickness of 600-800 angstroms.
Claim 14
Dependent Claim
19 words
The method of claim 3 wherein said step of forming by heteroepitaxial growth is performed by molecular beam epitaxy.
References Cited (Backward Citations)
US4397075A
Cited
US4717689A
Cited
JPH01278060A
Cited
US4906590A
Cited
JPH01283860A
Cited
US5110752A
Cited
US5130885A
Cited
US5266514A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1998-01-23 | 1998-07-25 | 1999-01-24 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2002-01-23 | 2002-07-25 | 2003-01-24 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2006-01-23 | 2006-07-25 | 2007-01-24 | $7700.00 | Window Closed / Lapsed |