← Back to Patent Explorer
US5378316A Expired / Lapsed US ⏱️ 0.0 years remaining

High durability mask for dry etch processing of GaAs

Assignee: Eastman Kodak Co
•
Filing: 1993-01-07
•
Granted: 1995-01-03
•
Expires: 2013-01-07
📄 Original PDF 🌐 Google Patents 🔄 Sync Now

Abstract

Abstract A mask is described which enables the fabrication of features in GaAs such as waveguides, channels, facets, mesas, and mirrors by dry etch processing in chlorine containing ambients. The mask consists of an amorphous form of carbon which may contain incorporated hydrogen. The mask can be applied, patterned and removed through dry processing techniques.

Inventors

  • 👤 Hans-George Franke
  • 👤 Eric T. Prince

Bibliographic Details

Application Number —
Jurisdiction US
Data Source google_patents
Last Synchronized 2026-10-29 17:57
CPC Classifications
H; H10; H10P; H10P50/00; H10P50/69; H10P50/691; H10P50/692

Claims Analysis

Total Claims: 4
Claim 1
Independent Claim 85 words
A method of forming a highly durable mask and using such mask in the dry etch processing of GaAs, comprising the steps of: (a) providing a layer of amorphous carbon over the GaAs which is resistant to attack by chlorine on GaAs; (b) forming openings in the amorphous carbon layer to expose the GaAs layer by dry processing to form an amorphous mask; (c) dry etch processing of the GaAs in chlorine containing ambients through the opening in the mask; and (d) removing the mask.
Claim 2
Independent Claim 85 words
A method of forming a highly durable mask and using such mask in the dry etch processing of GaAs, comprising the steps of: (a) providing a layer of amorphous carbon over the GaAs which is resistant to attack by chlorine on GaAs; (b) forming openings in the amorphous carbon layer to expose the GaAs layer by dry processing to form an amorphous mask; (c) dry etch processing of the GaAs in chlorine containing ambients through the opening in the mask; and (d) removing the mask.
Claim 3
Dependent Claim 12 words
The method of claim 1 wherein the amorphous carbon contains incorporated hydrogen.
Claim 4
Dependent Claim 13 words
The method of claim 1 wherein the mask is removed by dry processing.

References Cited (Backward Citations)

US4837182A Cited
JPS58212136A Cited
US4436797A Cited
US4640737A Cited
JPS62136820A Cited
US4860276A Cited

USPTO Annuity & Maintenance Windows

Annuity Stage Window Opens Payment Deadline Surcharge Period Until Estimated Fee Status
3.5 Years (Year 4) 1998-01-02 1998-07-04 1999-01-03 $2000.00 Window Closed / Lapsed
7.5 Years (Year 8) 2002-01-02 2002-07-04 2003-01-03 $3760.00 Window Closed / Lapsed
11.5 Years (Year 12) 2006-01-02 2006-07-04 2007-01-03 $7700.00 Window Closed / Lapsed

Assigned Categories & Tags

No categories assigned to this patent yet.

Assign Category Tag