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Patent US5372850A successfully refreshed from Google Patents.
US5372850A
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US
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Method of manufacturing an oxide-system dielectric thin film using CVD method
Assignee: Mitsubishi Electric Corp
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Filing: 1993-02-17
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Granted: 1994-12-13
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Expires: 2013-02-17
Abstract
Abstract In a process for manufacturing an oxide-system dielectric thin film using a raw material compound in which a metal atom is coupled with an organic group through oxygen atoms by the CVD method. A vapor of organic solvent having a boiling point less than 100 DEG C. contacts to the raw material compound at least in one of processes for vaporizing or transporting said raw material compound. The raw material compound of oxide-system dielectric thin film can be vaporized stably and transported to the reactor at a low temperature than before. Therefore, a composition can be controlled homogeneously and an oxide-system dielectric thin film having a good performance can be manufactured.
Inventors
- 👤 Fusaoki Uchikawa
- 👤 Shigeru Matsuno
- 👤 Shin-ichi Kinouchi
- 👤 Toshihisa Honda
- 👤 Takeharu Kuroiwa
- 👤 Hisao Watarai
- 👤 Takashi Higaki
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-01 17:38
CPC Classifications
C; C23; C23C; C23C16/00; C23C16/22; C23C16/30; C23C16/40; C23C16/409; C23C16/44; C23C16/448; C23C16/4481
Claims Analysis
Total Claims: 36
Claim 1
Independent Claim
98 words
A method for manufacturing an oxide-system dielectric thin film by the chemical vapor deposition method using a raw material compound in which a metal atom is coupled with an organic group through oxygen atoms, comprising a step of: causing a vapor of an organic solvent having a boiling point less than 100° C. to contact the raw material compound in the presence of an inert gas at least in one of a process for vaporizing or transporting said raw material compound, wherein said raw materials is in a form suitable for use in a chemical vapor deposition process.
Claim 2
Independent Claim
98 words
A method for manufacturing an oxide-system dielectric thin film by the chemical vapor deposition method using a raw material compound in which a metal atom is coupled with an organic group through oxygen atoms, comprising a step of: causing a vapor of an organic solvent having a boiling point less than 100° C. to contact the raw material compound in the presence of an inert gas at least in one of a process for vaporizing or transporting said raw material compound, wherein said raw materials is in a form suitable for use in a chemical vapor deposition process.
Claim 3
Dependent Claim
34 words
A method for manufacturing an oxide-system dielectric thin film according to claim 1, wherein the metal atom is selected at least from the group consisting of Pb, Ti, Zr, Ta or alkaline earth metals.
Claim 4
Dependent Claim
19 words
A method for manufacturing an oxide-system dielectric thin film according to claim 2, wherein the metal atom is Sr.
Claim 5
Dependent Claim
19 words
A method for manufacturing an oxide-system dielectric thin film according to claim 2, wherein the metal atom is Ba.
Claim 6
Dependent Claim
35 words
A method for manufacturing an oxide-system dielectric thin film according to claim 1, wherein the raw material compound is selected from the group consisting of acetyl-acetonates, dipivaloyl-methanates, alkoxides, hexafluoro-acetyl-acetonates, penta-fluoro-propanoyl-pivaloyl-methanates of metals, and those derivatives.
Claim 7
Dependent Claim
35 words
A method for manufacturing an oxide-system dielectric thin film according to claim 2, wherein the raw material compound is selected from the group consisting of acetyl-acetonates, dipivaloyl-methanates, alkoxides, hexafluoro-acetyl-acetonates, penta-fluoro-propanoyl-pivaloyl-methanates of metals, and those derivatives.
Claim 8
Dependent Claim
41 words
A method for manufacturing an oxide-system dielectric thin film according to claim 1, wherein the raw material compound is selected from the group consisting of dipivaloyl-methanates, hexafluoro-acetyl-acetonates and penta-fluoro-propanoyl-pivaloyl-methanates of Pb and alkaline earth metals, and alkoxides of Ti and Zr.
Claim 9
Dependent Claim
41 words
A method for manufacturing an oxide-system dielectric thin film according to claim 2, wherein the raw material compound is selected from the group consisting of dipivaloyl-methanates, hexafluoro-acetyl--acetonates and penta-fluoro-propanoil-pivaloyl-methanoates of Pb and alkaline earth metals, and alkoxides of Ti and Zr.
Claim 10
Dependent Claim
22 words
A method for manufacturing an oxide-system dielectric thin film according to claim 1, wherein the raw material compound is dipivaloyl-methanate of Sr.
Claim 11
Dependent Claim
22 words
A method for manufacturing an oxide-system dielectric thin film according to claim 1, wherein the raw material compound is dipivaloyl-methanate of Ba.
Claim 12
Dependent Claim
22 words
A method for manufacturing an oxide-system dielectric thin film according to claim 1, wherein the raw material compound is dipivaloyl-methanate of Sr.
Claim 13
Dependent Claim
22 words
A method for manufacturing an oxide-system dielectric thin film according to claim 1, wherein the raw material compound is dipivaloyl-methanate of Ba.
Claim 14
Dependent Claim
38 words
A method for manufacturing an oxide-system dielectric thin film according to claim 1, wherein the organic solvent having a boiling point less than 100° C. is selected from the group consisting of hydrocarbons, alcohols, ethers, ketones and amines.
Claim 15
Dependent Claim
35 words
A method for manufacturing an oxide dielectric thin film according to claim 1, wherein the organic solvent having a boiling point less than 100° C. is selected the group consisting of diethylether, dimethyl-ketone and tetra-hydro-furan.
Claim 16
Independent Claim
84 words
A method for manufacturing a dielectric thin film via chemical vapor deposition, comprising the steps of: selecting an organometallic compound; heating said compound in the presence of an inert carrier gas containing the vapor of an organic solvent having a boiling point less than 100° C. and a reactant gas for vaporizing and transporting said compound; and transporting a mixture of said compound, said reactant gas and said carrier gas into a reactor to deposit said dielectric film on a substrate in the reactor.
Claim 17
Independent Claim
84 words
A method for manufacturing a dielectric thin film via chemical vapor deposition, comprising the steps of: selecting an organometallic compound; heating said compound in the presence of an inert carrier gas containing the vapor of an organic solvent having a boiling point less than 100° C. and a reactant gas for vaporizing and transporting said compound; and transporting a mixture of said compound, said reactant gas and said carrier gas into a reactor to deposit said dielectric film on a substrate in the reactor.
Claim 18
Dependent Claim
27 words
The method as recited in claim 15, wherein said organometallic compound is selected from the group consisting of Pb, Ti, Zr, Ta, and alkaline earth metal compounds.
Claim 19
Dependent Claim
23 words
The method as recited in claim 15, wherein said carrier gas is selected from the group consisting of argon, nitrogen, helium, and neon.
Claim 20
Dependent Claim
32 words
The method as recited in claim 15, wherein said organic solvent having a boiling point less than 100° C. is selected from the group consisting of hydrocarbons, alcohols, ethers, ketones, and amines.
Claim 21
Dependent Claim
29 words
The method as recited in claim 15, wherein said carrier gas contains a reactant gas selected from the group consisting of oxygen, O 3 , and N 2 O.
Claim 22
Dependent Claim
14 words
The method as recited in claim 15, wherein said substrate is a coated substrate.
Claim 23
Dependent Claim
16 words
The method as recited in claim 20, wherein said substrate is a coated with magnesium oxide.
Claim 24
Dependent Claim
63 words
In a method of forming an oxide-system dielectric thin film via chemical vapor deposition using an organometallic raw material compound, the improvement comprising: contacting said raw material compound in the presence of an inert gas with a vapor of an organic solvent having a boiling point less than 100° C. in one of a process for vaporizing or transporting said raw material compound.
Claim 25
Dependent Claim
63 words
In a method of forming an oxide-system dielectric thin film via chemical vapor deposition using an organometallic raw material compound, the improvement comprising: contacting said raw material compound in the presence of an inert gas with a vapor of an organic solvent having a boiling point less than 100° C. in one of a process for vaporizing or transporting said raw material compound.
Claim 26
Dependent Claim
32 words
The improved method as recited in claim 22, wherein said organometallic raw material compound includes a metal atom selected from the group consisting of Pb, Ti, Zr, Ta and alkaline earth metals.
Claim 27
Dependent Claim
14 words
The improved method as recited in claim 23, wherein said metal atom is Sr.
Claim 28
Dependent Claim
14 words
The improved method as recited in claim 23, wherein said metal atom is Ba.
Claim 29
Dependent Claim
32 words
The improved method as recited in claim 22, wherein said organometallic raw material compound is selected from the group consisting of acetyl-acetonates, dipivaloyl-methanates, alkoxides, hexafluoro-acetyl-acetonates, penta-fluoro-propanoyl-pivaloyl-methanates of metals, and derivatives of these.
Claim 30
Dependent Claim
32 words
The improved method as recited in claim 23, wherein said organometallic raw material compound is selected from the group consisting of acetyl-acetonates, dipivaloyl-methanates, alkoxides, hexafluoro-acetyl-acetonates, penta-fluoro-propanoyl-pivaloyl-methanates of metals, and derivatives of these.
Claim 31
Dependent Claim
37 words
The improved method as recited in claim 22, wherein said organometallic raw material compound is selected from the group consisting of dipivaloyl-methanates, hexafluoro-acetyl-acetonates and penta-fluoro-propanoyl-pivaloyl-methanates of Pb and alkaline earth metals, and alkoxides of Ti and Zr.
Claim 32
Dependent Claim
37 words
The improved method as recited in claim 23, wherein said organometallic raw material compound is selected from the group consisting of dipivaloyl-methanates, hexafluoro-acetyl-acetonates and penta-fluoro-propanoyl-pivaloyl-methanates of Pb and alkaline earth metals, and alkoxides of Ti and Zr.
Claim 33
Dependent Claim
18 words
The improved method as recited in claim 22, wherein said organometallic raw material compound comprises dipivaloyl-methanate of Sr.
Claim 34
Dependent Claim
18 words
The improved method as recited in claim 22, wherein said organometallic raw material compound comprises dipivaloyl-methanate of Ba.
Claim 35
Dependent Claim
33 words
The improved method as recited in claim 22, wherein said organic solvent having a boiling point less than 100° C. is selected from the group consisting of hydrocarbons, alcohols, ethers, ketones and amines.
Claim 36
Dependent Claim
31 words
The improved method as recited in claim 22, wherein said organic solvent having a boiling point less than 100° C. is selected from the group consisting of diethylether, dimethylketone and tetrahydrofuran.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1997-12-12 | 1998-06-13 | 1998-12-13 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2001-12-12 | 2002-06-13 | 2002-12-13 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2005-12-12 | 2006-06-13 | 2006-12-13 | $7700.00 | Window Closed / Lapsed |