Patent US5371382A successfully refreshed from Google Patents.
US5371382A
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Amorphous silicon rectifying contact on diamond and method for making same
Assignee: KOBE DEVELOPMENT Corp A NC CORPORATION
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Filing: 1992-04-27
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Granted: 1994-12-06
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Expires: 2012-04-27
Abstract
Abstract A rectifying contact for use at high temperatures includes a semiconducting diamond layer and a doped amorphous silicon layer thereon. The amorphous silicon layer may be doped with either a p-type or n-type dopant. The semiconducting diamond may be a doped polycrystalline diamond layer or a natural IIb single crystal diamond. The amorphous silicon layer may be formed by sputter deposition from doped silicon targets. A subsequent heating of the thus formed rectifying contact lowers the forward resistance of the contact by activating additional dopant atoms within the amorphous silicon layer.
Inventors
- 👤 Vasudev Venkatesan
- 👤 Dale G. Thompson
- 👤 Kalyankumar Das
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 03:40
CPC Classifications
H; H10; H10D; H10D62/00; H10D62/80; H10D62/83; H10D62/8303; H10D64/00; H10D64/01; H10D64/012; H10D64/0121; H10D64/0122; H10D64/60; H10D64/64
Claims Analysis
Total Claims: 20
Claim 1
Independent Claim
70 words
A rectifying contact for a semiconductor device, said rectifying contact comprising: a semiconducting diamond layer having a dopant concentration of not greater than about 10 18 atoms/cm 3 ; and a doped amorphous silicon layer on said diamond layer and forming a rectifying contact therewith, said doped amorphous silicon layer being doped with a p-type dopant having a dopant concentration of not less than about 10 19 atoms/cm 3 .
Claim 2
Dependent Claim
70 words
A rectifying contact for a semiconductor device, said rectifying contact comprising: a semiconducting diamond layer having a dopant concentration of not greater than about 10 18 atoms/cm 3 ; and a doped amorphous silicon layer on said diamond layer and forming a rectifying contact therewith, said doped amorphous silicon layer being doped with a p-type dopant having a dopant concentration of not less than about 10 19 atoms/cm 3 .
Claim 3
Dependent Claim
39 words
A rectifying contact according to claim 1 wherein said semiconducting diamond layer has a dopant concentration in the range of 10 16 to 10 17 atoms/cm 3 to thereby form a rectifying contact with said doped amorphous silicon layer.
Claim 4
Dependent Claim
21 words
A rectifying contact according to claim 1 wherein said p-type dopant is selected from the group consisting of Group IIIb elements.
Claim 5
Dependent Claim
15 words
A rectifying contact according to claim 1 wherein said diamond layer comprises single crystal diamond.
Claim 6
Dependent Claim
17 words
A rectifying contact according to claim 4 wherein said single crystal diamond layer is natural IIb diamond.
Claim 7
Dependent Claim
71 words
A rectifying contact for a semiconductor device, said rectifying contact comprising: a polycrystalline semiconducting diamond layer having a dopant concentration of not greater than about 10 18 atoms/cm 3 ; and a doped amorphous silicon layer on said diamond layer and forming a rectifying contact therewith, said doped amorphous silicon layer being doped with a p-type dopant having a dopant concentration of not less than about 10 19 atoms/cm 3 .
Claim 8
Dependent Claim
71 words
A rectifying contact for a semiconductor device, said rectifying contact comprising: a polycrystalline semiconducting diamond layer having a dopant concentration of not greater than about 10 18 atoms/cm 3 ; and a doped amorphous silicon layer on said diamond layer and forming a rectifying contact therewith, said doped amorphous silicon layer being doped with a p-type dopant having a dopant concentration of not less than about 10 19 atoms/cm 3 .
Claim 9
Dependent Claim
39 words
A rectifying contact according to claim 6 wherein said semiconducting diamond layer has a dopant concentration in the range of 10 16 to 10 17 atoms/cm 3 to thereby form a rectifying contact with said doped amorphous silicon layer.
Claim 10
Dependent Claim
21 words
A rectifying contact according to claim 6 wherein said p-type dopant is selected from the group consisting of Group IIIb elements.
Claim 11
Dependent Claim
51 words
A rectifying contact for a semiconductor device, said rectifying contact comprising: a semiconducting diamond layer; and a doped amorphous silicon layer on said diamond layer and forming a rectifying contact therewith, said doped amorphous silicon layer having a p-type dopant concentration of not less than about 10 19 atoms/cm 3 .
Claim 12
Dependent Claim
51 words
A rectifying contact for a semiconductor device, said rectifying contact comprising: a semiconducting diamond layer; and a doped amorphous silicon layer on said diamond layer and forming a rectifying contact therewith, said doped amorphous silicon layer having a p-type dopant concentration of not less than about 10 19 atoms/cm 3 .
Claim 13
Dependent Claim
39 words
A rectifying contact according to claim 9 wherein said semiconducting diamond layer has a dopant concentration in the range of 10 16 to 10 17 atoms/cm 3 to thereby form a rectifying contact with said doped amorphous silicon layer.
Claim 14
Dependent Claim
21 words
A rectifying contact according to claim 9 wherein said p-type dopant is selected from the group consisting of Group IIIb elements.
Claim 15
Dependent Claim
15 words
A rectifying contact according to claim 9 wherein said diamond layer comprises single crystal diamond.
Claim 16
Dependent Claim
17 words
A rectifying contact according to claim 12 wherein said single crystal diamond layer is natural IIb diamond.
Claim 17
Dependent Claim
52 words
A rectifying contact for a semiconductor device, said rectifying contact comprising: a polycrystalline semiconducting diamond layer; and a doped amorphous silicon layer on said diamond layer and forming a rectifying contact therewith, said doped amorphous silicon layer having a p-type dopant concentration of not less than about 10 19 atoms/cm 3 .
Claim 18
Dependent Claim
52 words
A rectifying contact for a semiconductor device, said rectifying contact comprising: a polycrystalline semiconducting diamond layer; and a doped amorphous silicon layer on said diamond layer and forming a rectifying contact therewith, said doped amorphous silicon layer having a p-type dopant concentration of not less than about 10 19 atoms/cm 3 .
Claim 19
Dependent Claim
39 words
A rectifying contact according to claim 14 wherein said semiconducting diamond layer has a dopant concentration in the range of 10 16 to 10 17 atoms/cm 3 to thereby form a rectifying contact with said doped amorphous silicon layer.
Claim 20
Dependent Claim
21 words
A rectifying contact according to claim 14 wherein said p-type dopant is selected from the group consisting of Group IIIb elements.
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