US5075757A
Expired / Lapsed
US
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Ohmic contact electrodes for semiconductor diamonds
Assignee: Sumitomo Electric Industries Ltd
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Filing: 1990-07-25
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Granted: 1991-12-24
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Expires: 2010-07-25
Abstract
Abstract As electrodes for the semiconductor diamond, the p + or n + polycrystalline silicon film or amorphous silicon film including microcrystalline silicon phase is formed on the semiconductor diamond, whereby an ohmic contact electrode with low contact resistance can be made.
Inventors
- 👤 Masayuki Ishii
- 👤 Tunenobu Kimoto
- 👤 Shoji Nakagama
- 👤 Tadashi Tomikawa
- 👤 Nobuhiko Fujita
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 03:50
CPC Classifications
H; H10; H10D; H10D64/00; H10D64/01; H10D64/011; H10D64/0111; H10D64/0114; H10D64/60; H10D64/62
Claims Analysis
Total Claims: 10
Claim 1
Independent Claim
26 words
An ohmic contact electrode for a semiconductor diamond, comprising a p + or n + polycrystalline silicon film or amorphous silicon film including microcrystalline silicon phase.
Claim 2
Dependent Claim
26 words
An ohmic contact electrode for a semiconductor diamond, comprising a p + or n + polycrystalline silicon film or amorphous silicon film including microcrystalline silicon phase.
Claim 3
Dependent Claim
21 words
The ohmic contact electrode according to claim 1, wherein the polycrystalline silicon film is formed by B doped polycrystalline silicon film.
Claim 4
Dependent Claim
22 words
The ohmic contact electrode according to claim 1, wherein the polycrystalline silicon film is formed by P (phosphorous) doped polycrystalline silicon film.
Claim 5
Dependent Claim
17 words
The ohmic contact electrode according to claim 1, wherein the polycrystalline silicon is formed by LPCVD method.
Claim 6
Dependent Claim
27 words
The ohmic contact electrode according to claim 1, wherein the amorphous silicon film including the microcrystalline silicon film phase is formed by B doped amorphous silicon film.
Claim 7
Dependent Claim
25 words
The ohmic contact electrode according to claim 1, wherein the amorphous silicon including the microcrystalline silicon phase is formed by P doped amorphous silicon film.
Claim 8
Dependent Claim
31 words
The ohmic contact electrode according to any one of the claim 1, 5 or 6, wherein the amorphous silicon film including the microcrystalline silicon phase is formed by plasma CVD method.
Claim 9
Dependent Claim
38 words
The ohmic contact electrode according to any one of claim 1, wherein the electrode is annealed after the electrode is formed in inert gas, H 2 gas or vacuum at the temperature of 600° C. to 1,000° C.
Claim 10
Dependent Claim
24 words
The ohmic contact electrode according to any one of claim 1, wherein the resistivity of the electrode is less than 10 0 Ωcm inclusive.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
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| 3.5 Years (Year 4) | 1994-12-23 | 1995-06-24 | 1995-12-24 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1998-12-23 | 1999-06-24 | 1999-12-24 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2002-12-23 | 2003-06-24 | 2003-12-24 | $7700.00 | Window Closed / Lapsed |