US5252840A
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Semiconductor device having differently doped diamond layers
Assignee: Sumitomo Electric Industries Ltd
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Filing: 1991-05-09
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Granted: 1993-10-12
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Expires: 2011-05-09
Abstract
Abstract A semiconductor device having active parts made from semiconductor diamond. The active parts include a high doped diamond layer for supplying free carriers and a non- or low doped diamond layer for giving the free carriers a conductive region. The free carriers are transferred from the high doped diamond layer to the non- or low doped diamond layer by diffusion or an applied electric field. Since the free carriers move at high speeds in the non- or low doped diamond layer without being scattered by dopant atoms, the semiconductor device is applicable to high frequency devices with stability against a change in temperature.
Inventors
- 👤 Hiromu Shiomi
- 👤 Yoshiki Nishibayashi
- 👤 Naoji Fujimori
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-01 21:11
CPC Classifications
H; H10; H10D; H10D8/00; H10D8/60; H10D30/00; H10D30/01; H10D30/80; H10D30/87; H10D62/00; H10D62/80; H10D62/83; H10D62/8303; H10D8/01; H10D8/051; H10P; H10P14/00; H10P14/20; H10P14/24; H10P14/29; H10P14/2901; H10P14/2902; H10P14/2903; H10P14/2905; H10P14/2926; H10P14/32; H10P14/3202; H10P14/3204; H10P14/3206; H10P14/34; H10P14/3402; H10P14/3404; H10P14/3406; H10P14/3438; H10P14/3441; H10P14/3444
Claims Analysis
Total Claims: 33
Claim 1
Independent Claim
63 words
A semiconductor device comprising: a monocrystalline diamond substrate, a p + -type diamond layer with 10 18 cm -3 to 10 22 cm -3 of dopant atoms deposited on the substrate, a non-doped diamond layer deposited on the p + -type diamond layer, an ohmic contact electrode deposited on the non-doped diamond layer, and Schottky contact electrode deposited on the non-doped diamond layer.
Claim 2
Dependent Claim
63 words
A semiconductor device comprising: a monocrystalline diamond substrate, a p + -type diamond layer with 10 18 cm -3 to 10 22 cm -3 of dopant atoms deposited on the substrate, a non-doped diamond layer deposited on the p + -type diamond layer, an ohmic contact electrode deposited on the non-doped diamond layer, and Schottky contact electrode deposited on the non-doped diamond layer.
Claim 3
Dependent Claim
62 words
A semiconductor device comprising: a monocrystalline diamond substrate, a boron-doped diamond layer with 10 18 cm -3 to 10 22 cm -3 of boron atoms deposited on the substrate, a non-doped diamond layer deposited on the boron-doped diamond layer, an ohmic contact titanium electrode deposited on the non-doped diamond layer, and a Schottky contact aluminum electode deposited on the non-doped diamond layer.
Claim 4
Dependent Claim
62 words
A semiconductor device comprising: a monocrystalline diamond substrate, a boron-doped diamond layer with 10 18 cm -3 to 10 22 cm -3 of boron atoms deposited on the substrate, a non-doped diamond layer deposited on the boron-doped diamond layer, an ohmic contact titanium electrode deposited on the non-doped diamond layer, and a Schottky contact aluminum electode deposited on the non-doped diamond layer.
Claim 5
Dependent Claim
77 words
A semiconductor device comprising: a monocrystalline diamond substrate, a p + -type diamond layer with 10 18 cm -3 to 10 22 cm -3 of dopant atoms deposited on the substrate, a low doped diamond layer with less than 10 17 cm -3 of impurity atoms deposited on the p + -type diamond layer, an ohmic contact electrode deposited on the low doped diamond layer, and a Schottky contact electrode deposited on the low doped diamond layer.
Claim 6
Dependent Claim
77 words
A semiconductor device comprising: a monocrystalline diamond substrate, a p + -type diamond layer with 10 18 cm -3 to 10 22 cm -3 of dopant atoms deposited on the substrate, a low doped diamond layer with less than 10 17 cm -3 of impurity atoms deposited on the p + -type diamond layer, an ohmic contact electrode deposited on the low doped diamond layer, and a Schottky contact electrode deposited on the low doped diamond layer.
Claim 7
Dependent Claim
76 words
A semiconductor device comprising: a monocrystalline diamond substrate, a high boron-doped diamond layer with 10 18 cm -3 to 10 22 cm -3 of boron atoms deposited on the substrate, a low boron-doped diamond with less than 10 17 cm -3 of impurity atoms deposited on the high boron-doped diamond layer, an ohmic contact titanium electrode deposited on the low boron-doped diamond layer, and a Schottky contact aluminum electrode deposited on the low boron-doped diamond layer.
Claim 8
Dependent Claim
76 words
A semiconductor device comprising: a monocrystalline diamond substrate, a high boron-doped diamond layer with 10 18 cm -3 to 10 22 cm -3 of boron atoms deposited on the substrate, a low boron-doped diamond with less than 10 17 cm -3 of impurity atoms deposited on the high boron-doped diamond layer, an ohmic contact titanium electrode deposited on the low boron-doped diamond layer, and a Schottky contact aluminum electrode deposited on the low boron-doped diamond layer.
Claim 9
Dependent Claim
86 words
A semiconductor device comprising: a monocrystalline silicon substrate having a first and second side, a high doped diamond layer with 10 18 cm -3 to 10 22 cm -3 of dopant atoms deposited on the first side of the silicon substrate, a low-doped diamond layer with less than 10 17 cm -3 of impurity atoms deposited on the high doped diamond layer; a Schottky contact electrode deposited on the low-doped diamond layer, and an ohmic contact electrode deposited on the second side of the silicon substrate.
Claim 10
Dependent Claim
86 words
A semiconductor device comprising: a monocrystalline silicon substrate having a first and second side, a high doped diamond layer with 10 18 cm -3 to 10 22 cm -3 of dopant atoms deposited on the first side of the silicon substrate, a low-doped diamond layer with less than 10 17 cm -3 of impurity atoms deposited on the high doped diamond layer; a Schottky contact electrode deposited on the low-doped diamond layer, and an ohmic contact electrode deposited on the second side of the silicon substrate.
Claim 11
Dependent Claim
89 words
A semiconductor device comprising: a monocrystalline diamond substrate, a high doped diamond layer with 10 18 cm -3 to 10 22 cm -3 of dopant atoms deposited on the substrate, a low doped diamond layer with less than 10 17 cm -3 of impurity atoms deposited on the high doped diamond layer, an ohmic contact source electrode deposited on the low doped diamond layer, a Schottky contact gate electrode deposited on the low doped diamond layer, and an ohmic contact drain electrode deposited on the low doped diamond layer.
Claim 12
Dependent Claim
89 words
A semiconductor device comprising: a monocrystalline diamond substrate, a high doped diamond layer with 10 18 cm -3 to 10 22 cm -3 of dopant atoms deposited on the substrate, a low doped diamond layer with less than 10 17 cm -3 of impurity atoms deposited on the high doped diamond layer, an ohmic contact source electrode deposited on the low doped diamond layer, a Schottky contact gate electrode deposited on the low doped diamond layer, and an ohmic contact drain electrode deposited on the low doped diamond layer.
Claim 13
Dependent Claim
102 words
A simiconductor device comprising: a substrate selected from the group consisting of Si, Ge, GaAs, GaN, InP, ZnSe, c-BN or SiC, a high doped diamond layer with 10 18 cm -3 to 10 22 cm -3 of dopant atoms deposited on the substrate, a low doped diamond layer with less than 10 17 cm -3 of impurity atoms deposited on the high doped diamond layer, an ohmic contact source electrode deposited on the low doped diamond layer, a Schottky contact gate electrode deposited on the low doped diamond layer, and an ohmic contact drain electrode deposited on the low doped diamond layer.
Claim 14
Dependent Claim
102 words
A simiconductor device comprising: a substrate selected from the group consisting of Si, Ge, GaAs, GaN, InP, ZnSe, c-BN or SiC, a high doped diamond layer with 10 18 cm -3 to 10 22 cm -3 of dopant atoms deposited on the substrate, a low doped diamond layer with less than 10 17 cm -3 of impurity atoms deposited on the high doped diamond layer, an ohmic contact source electrode deposited on the low doped diamond layer, a Schottky contact gate electrode deposited on the low doped diamond layer, and an ohmic contact drain electrode deposited on the low doped diamond layer.
Claim 15
Dependent Claim
57 words
A semiconductor device comprising: a substrate; a high doped diamond layer for supplying free carriers deposited on said substrate; a non-doped diamond layer for giving said free carriers a conductive region deposited on said high doped diamond layer, a portion of said free carriers being transferred from said high doped diamond layer to said non-doped diamond layer.
Claim 16
Dependent Claim
57 words
A semiconductor device comprising: a substrate; a high doped diamond layer for supplying free carriers deposited on said substrate; a non-doped diamond layer for giving said free carriers a conductive region deposited on said high doped diamond layer, a portion of said free carriers being transferred from said high doped diamond layer to said non-doped diamond layer.
Claim 17
Dependent Claim
16 words
The semiconductor device as in claim 8, further comprising: electrodes deposited on said non-doped diamond layer.
Claim 18
Dependent Claim
29 words
The semiconductor device as in claim 8, wherein an impurity concentration of said high doped diamond layer is between 10 18 cm -3 and 10 22 cm -3 .
Claim 19
Dependent Claim
29 words
The semiconductor device as in claim 8, wherein said portion of free electrons transferred from said high doped diamond layer to said non-doped diamond layer are transferred by diffusion.
Claim 20
Dependent Claim
32 words
The semiconductor device as in claim 8, wherein said portion of free electrons transferred from said high doped diamond layer to said non-doped diamond layer are transferred by an applied electric field.
Claim 21
Dependent Claim
59 words
A semiconductor device comprising: a substrate; a high doped diamond layer for supplying free carriers deposited on said substrate; a low doped diamond layer for giving said free carriers a conductive region deposited on said high doped diamond layer, a portion of said free carriers being transferred from said high doped diamond layer to said low doped diamond layer.
Claim 22
Dependent Claim
59 words
A semiconductor device comprising: a substrate; a high doped diamond layer for supplying free carriers deposited on said substrate; a low doped diamond layer for giving said free carriers a conductive region deposited on said high doped diamond layer, a portion of said free carriers being transferred from said high doped diamond layer to said low doped diamond layer.
Claim 23
Dependent Claim
16 words
The semiconductor device as in claim 13, further comprising: electrodes deposited on said non-doped diamond layer.
Claim 24
Dependent Claim
29 words
The semiconductor device as in claim 13, wherein an impurity concentration of said high doped diamond layer is between 10 18 cm -3 and 10 22 cm -3 .
Claim 25
Dependent Claim
25 words
The semiconductor device as in claim 13, wherein an impurity concentration of said low doped diamond layer is less than 10 17 cm -3 .
Claim 26
Dependent Claim
30 words
The semiconductor device as in claim 13, wherein said portion of free electrons transferred from said high doped diamond layer to said low doped diamond layer are transferred by diffusion.
Claim 27
Dependent Claim
33 words
The semiconductor device as in claim 13, wherein said portion of free electrons transferred from said high doped diamond layer to said low doped diamond layer are transferred by an applied electric field.
Claim 28
Dependent Claim
76 words
A semiconductor device comprising: a monocrystalline silicon substrate having a first and second side, a high doped diamond layer with 10 18 cm -3 to 10 22 cm -3 of dopant atoms deposited on the first side of the silicon substrate, a non-doped diamond layer deposited on the high doped diamond layer; a Schottky contact electrode deposited on the non-doped diamond layer, and an ohmic contact electrode deposited on the second side of the silicon substrate.
Claim 29
Dependent Claim
76 words
A semiconductor device comprising: a monocrystalline silicon substrate having a first and second side, a high doped diamond layer with 10 18 cm -3 to 10 22 cm -3 of dopant atoms deposited on the first side of the silicon substrate, a non-doped diamond layer deposited on the high doped diamond layer; a Schottky contact electrode deposited on the non-doped diamond layer, and an ohmic contact electrode deposited on the second side of the silicon substrate.
Claim 30
Dependent Claim
75 words
A semiconductor device comprising: a monocrystalline diamond substrate, a high doped diamond layer with 10 18 cm -3 to 10 22 cm -3 of dopant atoms deposited on the substrate, a non-doped diamond layer deposited on the high doped diamond layer, an ohmic contact source electrode deposited on the non-doped diamond layer, a Schottky contact gate electrode deposited on the non-doped diamond layer, and an ohmic contact drain electrode deposited on the non-doped diamond layer.
Claim 31
Dependent Claim
75 words
A semiconductor device comprising: a monocrystalline diamond substrate, a high doped diamond layer with 10 18 cm -3 to 10 22 cm -3 of dopant atoms deposited on the substrate, a non-doped diamond layer deposited on the high doped diamond layer, an ohmic contact source electrode deposited on the non-doped diamond layer, a Schottky contact gate electrode deposited on the non-doped diamond layer, and an ohmic contact drain electrode deposited on the non-doped diamond layer.
Claim 32
Dependent Claim
88 words
A semiconductor device comprising: a substrate selected from the group consisting of Si, Ge, GaAs, GaN, InP, ZnSe, c-BN or SiC, a high doped diamond layer with 10 18 cm -3 to 10 22 cm -3 of dopant atoms deposited on the substrate, a non-doped diamond layer deposited on the high doped diamond layer, an ohmic contact source electrode deposited on the non-doped diamond layer, a Schottky contact gate electrode deposited on the non-doped diamond layer, and an ohmic contact drain electrode deposited on the non-doped diamond layer.
Claim 33
Dependent Claim
88 words
A semiconductor device comprising: a substrate selected from the group consisting of Si, Ge, GaAs, GaN, InP, ZnSe, c-BN or SiC, a high doped diamond layer with 10 18 cm -3 to 10 22 cm -3 of dopant atoms deposited on the substrate, a non-doped diamond layer deposited on the high doped diamond layer, an ohmic contact source electrode deposited on the non-doped diamond layer, a Schottky contact gate electrode deposited on the non-doped diamond layer, and an ohmic contact drain electrode deposited on the non-doped diamond layer.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1996-10-11 | 1997-04-12 | 1997-10-12 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2000-10-11 | 2001-04-12 | 2001-10-12 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2004-10-11 | 2005-04-12 | 2005-10-12 | $7700.00 | Window Closed / Lapsed |