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US5370458A
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Monolithic microwave power sensor
Assignee: Lockheed Martin Corp
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Filing: 1990-10-09
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Granted: 1994-12-06
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Expires: 2010-10-09
Abstract
Abstract A monolithic integrated circuit power sensor provides a monolithic integrated circuit substrate a conversion element formed either on or in the substrate for converting microwave energy into heat, an electrically insulating dielectric layer affixed to the conversion element, and an integrated circuit, heat sensitive element formed in sufficiently close proximity to the conversion element to be thermally coupled thereto through the dielectric layer for sensing temperature changes in the conversion element.
Inventors
- 👤 Miles E. Goff
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-08 15:51
CPC Classifications
G; G01; G01R; G01R21/00; G01R21/02; G01R21/04
Claims Analysis
Total Claims: 9
Claim 1
Independent Claim
79 words
An integrated circuit device for sensing microwave power, comprising: a monolithic integrated circuit substrate; conversion means formed in the substrate for converting microwave energy into heat; an electrically insulating dielectric layer deposited on the conversion means; and a thin film metal resistor having a temperature dependent resistance and being deposited on the dielectric by integrated circuit techniques directly over the conversion means to be thermally coupled thereto through the dielectric layer for sensing temperature changes in the conversion means.
Claim 2
Dependent Claim
79 words
An integrated circuit device for sensing microwave power, comprising: a monolithic integrated circuit substrate; conversion means formed in the substrate for converting microwave energy into heat; an electrically insulating dielectric layer deposited on the conversion means; and a thin film metal resistor having a temperature dependent resistance and being deposited on the dielectric by integrated circuit techniques directly over the conversion means to be thermally coupled thereto through the dielectric layer for sensing temperature changes in the conversion means.
Claim 3
Dependent Claim
30 words
The integrated circuit device of claim 1, wherein the substrate is gallium arsenide and further wherein the conversion means is formed by ion implanting a portion of the gallium arsenide.
Claim 4
Dependent Claim
41 words
The device of claim 1, wherein the thin metal film resistor is elongated and is constructed to have the longest length possible over the conversion means for increasing the resistance of the resistor and the thermal coupling to the conversion means.
Claim 5
Dependent Claim
17 words
The device of claim 2 wherein the thin metal film resistor is formed with titanium and platinum.
Claim 6
Dependent Claim
16 words
The device of claim 4, wherein the thin metal film resistor is also formed with gold.
Claim 7
Dependent Claim
16 words
The device of claim 5, wherein the dielectric is formed with silicon nitride or silicon oxide.
Claim 8
Dependent Claim
35 words
The device of claim 3, wherein the elongated metal film resistor is arranged symmetrically with respect to any electromagnetic field produced in the conversion means for providing self-cancellation of any energy coupled to the resistor.
Claim 9
Dependent Claim
29 words
The device of claim 6, further comprising circuit means responsive to the heat sensitive element for generating a signal indicative of the microwave energy received by the conversion means.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1997-12-05 | 1998-06-06 | 1998-12-06 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2001-12-05 | 2002-06-06 | 2002-12-06 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2005-12-05 | 2006-06-06 | 2006-12-06 | $7700.00 | Window Closed / Lapsed |