Patent US5366929A successfully refreshed from Google Patents.
US5366929A
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US
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Method for making reliable selective via fills
Assignee: Deca Technologies USA Inc
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Filing: 1993-05-28
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Granted: 1994-11-22
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Expires: 2013-05-28
Abstract
Abstract A process for filling vias formed in a dielectric layer is disclosed. First, a via is formed in a dielectric layer, exposing an underlying metallization layer having a seed layer thereon. A sputter etch is performed which removes a portion of the seed layer, including an oxidized surface layer. The material thus etched from the seed layer first seals the sidewall of via, preventing outgassing from occurring. The continued redeposition of the seed layer on the sidewall provides a nucleation site for selective deposition of a via fill material. Following the sputter etch, selective deposition of the via fill is performed. Since the deposition occurs from the sidewalls as well as on the bottom of the via, all vias become substantially filled at the same time.
Inventors
- 👤 James M. Cleeves
- 👤 Changhae Park
- 👤 Rosemary Gettle
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-01 06:11
CPC Classifications
H; H10; H10W; H10W20/00; H10W20/01; H10W20/031; H10W20/032; H10W20/042; H10W20/045; H10W20/033; H10W20/034; H10W20/038; H10W20/052; H10W20/0523; H10W20/054; H10W20/056; H10W20/057; H10W20/071; H10W20/081; H10W20/083; Y; Y10; Y10S; Y10S148/00; Y10S148/158; Y10S438/00; Y10S438/906
Claims Analysis
Total Claims: 14
Claim 1
Independent Claim
107 words
A method of treating openings in a dielectric layer comprising the steps of: depositing said dielectric layer on an underlying layer, said dielectric layer comprising an insulative material selected from the group consisting of spin-on-glass and a thermal chemical vapor deposited oxide; forming a plurality of said openings in said dielectric layer, each of said openings exposing a region of said underlying layer, each of said openings having a sidewall, said sidewall exposing said insulative material, and wherein at least one of said openings has a depth different from another of said openings; performing an etch such that material from said region is deposited on said sidewall.
Claim 2
Independent Claim
107 words
A method of treating openings in a dielectric layer comprising the steps of: depositing said dielectric layer on an underlying layer, said dielectric layer comprising an insulative material selected from the group consisting of spin-on-glass and a thermal chemical vapor deposited oxide; forming a plurality of said openings in said dielectric layer, each of said openings exposing a region of said underlying layer, each of said openings having a sidewall, said sidewall exposing said insulative material, and wherein at least one of said openings has a depth different from another of said openings; performing an etch such that material from said region is deposited on said sidewall.
Claim 3
Dependent Claim
28 words
The method as described in claim 1 wherein said region comprises a material selected from the group consisting of titanium nitride, titanium tungsten, tungsten and any combination thereof.
Claim 4
Dependent Claim
14 words
The method as described in claim 2 wherein said etch is a sputter etch.
Claim 5
Dependent Claim
14 words
The method as described in claim 1 wherein said etch is a sputter etch.
Claim 6
Independent Claim
116 words
A method of filling openings in a dielectric layer comprising the steps of: depositing said dielectric layer on an underlying layer, said dielectric layer comprising an insulative material selected from the group consisting of spin-on-glass and a thermal chemical vapor deposited oxide; forming a plurality of said openings in said dielectric layer, each of said openings exposing a region of said underlying layer, each of said openings having a sidewall, said sidewall exposing said insulative material, and wherein at least one of said openings has a depth different from another of said openings; performing an etch such that a first material from said region is deposited on said sidewall; filling said openings with a second material.
Claim 7
Independent Claim
116 words
A method of filling openings in a dielectric layer comprising the steps of: depositing said dielectric layer on an underlying layer, said dielectric layer comprising an insulative material selected from the group consisting of spin-on-glass and a thermal chemical vapor deposited oxide; forming a plurality of said openings in said dielectric layer, each of said openings exposing a region of said underlying layer, each of said openings having a sidewall, said sidewall exposing said insulative material, and wherein at least one of said openings has a depth different from another of said openings; performing an etch such that a first material from said region is deposited on said sidewall; filling said openings with a second material.
Claim 8
Dependent Claim
26 words
The method as described in claim 5, wherein said step of filling said openings with a second material comprises a selective deposition of said second material.
Claim 9
Dependent Claim
25 words
The method as described in claim 6 wherein said second material comprises a material selected from the group consisting of tungsten, copper nickel, and polysilicon.
Claim 10
Dependent Claim
14 words
The method as described in claim 7 wherein said etch is a sputter etch.
Claim 11
Dependent Claim
28 words
The method as described in claim 7 wherein said selective deposition is performed by a method selected from the group consisting of selective CVD deposition and selective plating.
Claim 12
Dependent Claim
28 words
The method as described in claim 6 wherein said selective deposition is performed by a method selected from the group consisting of selective CVD deposition and selective plating.
Claim 13
Dependent Claim
14 words
The method as described in claim 5 wherein said etch is a sputter etch.
Claim 14
Dependent Claim
28 words
The method as described in claim 11 wherein said selective deposition is performed by a method selected from the group consisting of selective CVD deposition and selective plating.
References Cited (Backward Citations)
US4666737A
Cited
JPS6465852A
Cited
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