Method of filling fine hole with metal

Abstract

Abstract PURPOSE:To fill selectively a fine hole with a metal in a short time by a method wherein, after the sidewall of the fine hole is covered with a base material by sputtering the base material of the bottom part of the fine hole, a selective CVD of a metal is performed. CONSTITUTION:An SiO2 film 2 is formed on an Al base wiring 1 by a plasma CVD method and so on and thereafter, a hole 3 is opened by a photoetching process. Then, the obtained sample is bombarded with Ar<+> ions 4 using a plasma treating unit, whereby the base Al of the bottom part of the hole is sputtered and is adhered on the sidewall if the hole. Then, a selective CVD of W5 is performed on the obtained sample using a cold wall type CVD unit to finish a hole filling. In such a way, the fine hole can be filled selectively with a metal in a short time and moreover, the continuity between the hole filling metal and an Al wiring to be provided in an upper layer can be improved.

Inventors

• 👤 Susumu Tsujiku
• 👤 Eisuke Nishitani
• 👤 Mitsuo Nakatani
• 👤 Masaaki Maehara
• 👤 Koichiro Mizukami

Bibliographic Details