Patent US5365095A successfully refreshed from Google Patents.
US5365095A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Semiconductor memory device and process
Assignee: Panasonic Holdings Corp
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Filing: 1993-02-18
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Granted: 1994-11-15
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Expires: 2013-02-18
Abstract
Abstract A semiconductor memory device with a storage capacitor is provided which accomplishes a large storage capacity together with a high component density, and facilitates the production. A switching transistor is formed locally in a semiconductor substrate. Formed over the transistor is an upper-level wire disposed over which is a storage capacitor. A storage capacitor contact passes through the upper-level wire. While ensuring a good capacity for the storage capacitor contact, the allowance of focus, too, can advantageously be obtained in simultaneously transferring a pattern of the upper-level wire onto the memory cell region as well as onto the peripheral circuit region. Particularly, by having the storage capacitor contact pass through a bit line, a drain and a source can symmetrically be arranged with a word line, like a memory cell with a bit-line-over-storage-capacitor organization cell. This eliminates an excess portion resulting in increasing the density.
Inventors
- 👤 Tomofumi Shono
- 👤 Teruhito Ohnishi
- 👤 Masanori Fukumoto
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-30 17:25
CPC Classifications
H; H10; H10W; H10W20/00; H10W20/40; H10W20/41; H10W20/44; H10W20/4403; H10W20/4405; H10W20/4407; H10B; H10B12/00; H10B12/30; H10B12/31; H10W20/425; H10W20/4437; H10W20/4441
Claims Analysis
Total Claims: 8
Claim 1
Independent Claim
154 words
A semiconductor memory device comprising: a switching transistor that is formed in a semiconductor substrate having an ion diffused layer near a surface of the semiconductor substrate, the ion diffused layer forming a source and a drain of the switching transistor; a word line that forms a gate of the switching transistor, said word line separated from said semiconductor substrate by a gate oxide layer; a bit line that is formed over the switching transistor and is directly coupled to a part of the ion diffused layer of the switching transistor; at least one upper-level wire that is formed over the bit line and the word line, said upper-level wire being separated from the bit line and word line by a dielectric layer; and a storage capacitor formed over the upper-level wire, said storage capacitor being coupled to a portion of the ion diffused layer of the switching transistor by a storage capacitor contact.
Claim 2
Dependent Claim
154 words
A semiconductor memory device comprising: a switching transistor that is formed in a semiconductor substrate having an ion diffused layer near a surface of the semiconductor substrate, the ion diffused layer forming a source and a drain of the switching transistor; a word line that forms a gate of the switching transistor, said word line separated from said semiconductor substrate by a gate oxide layer; a bit line that is formed over the switching transistor and is directly coupled to a part of the ion diffused layer of the switching transistor; at least one upper-level wire that is formed over the bit line and the word line, said upper-level wire being separated from the bit line and word line by a dielectric layer; and a storage capacitor formed over the upper-level wire, said storage capacitor being coupled to a portion of the ion diffused layer of the switching transistor by a storage capacitor contact.
Claim 3
Dependent Claim
23 words
The semiconductor memory device as in claim 1, wherein a capacitor insulation layer of the storage capacitor is formed of a ferroelectric material.
Claim 4
Dependent Claim
36 words
The semiconductor memory device as in claim 1 or claim 2, wherein the storage capacitor contact is formed in such a manner that the storage capacitor contact passes through at least one of the upper-level wires.
Claim 5
Dependent Claim
29 words
The semiconductor memory device as in claim 1 or claim 2, wherein the storage capacitor contact is formed such that the storage capacitor contact passes through the bit line.
Claim 6
Dependent Claim
60 words
The semiconductor memory device as in claim 1 or claim 2, wherein the storage capacitor contact is formed such that, at a point where the storage capacitor contact and a bit line cross, only a portion of the storage capacitor contact passes through the bit line, while the remaining portion of the storage capacitor contact passes outside the bit line.
Claim 7
Dependent Claim
48 words
The semiconductor memory device as in claim 1 or claim 2 wherein an extraction electrode is formed on the ion diffused layer to which at least the storage capacitor contact is connected, and the storage capacitor contact is connected to the ion diffused layer through the extraction electrode.
Claim 8
Dependent Claim
54 words
The semiconductor memory device as in claim 6, wherein a capacitor insulation layer and a plate electrode in turn are formed on the extraction electrode, and the storage capacitor contact is formed in such a manner that the storage capacitor contact passes through the plate electrode as well as through the capacitor insulation layer.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1997-11-14 | 1998-05-16 | 1998-11-15 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2001-11-14 | 2002-05-16 | 2002-11-15 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2005-11-14 | 2006-05-16 | 2006-11-15 | $7700.00 | Window Closed / Lapsed |