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US5362711A
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Method for producing single crystal superconducting LnA2 Cu3 O7-x films
Assignee: Kanegafuchi Chemical Industry Co Ltd
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Filing: 1993-04-27
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Granted: 1994-11-08
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Expires: 2013-04-27
Abstract
Abstract A process for forming a single crystal superconducting LnA 2 Cu 3 O 7-x film, wherein Ln is at least one rare earth element and A is at least one alkaline earth element, is disclosed, which comprises simultaneously evaporating Ln, A and Cu in an atomic ratio of about 1:2:3 from discrete evaporation sources of Ln, A and Cu onto a heated substrate in a vacuum vessel while blowing an oxygen gas onto the substrate to form an oxygen-containing atmosphere, thereby forming the single crystal superconducting film on the substrate.
Inventors
- 👤 Toshio Takada
- 👤 Takahito Terashima
- 👤 Yoshichika Bando
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 04:55
CPC Classifications
C; C30; C30B; C30B25/00; C30B25/02; C30B29/00; C30B29/10; C30B29/16; C30B29/22; C30B29/225; H; H10; H10N; H10N60/00; H10N60/01; H10N60/0268; H10N60/0296; H10N60/0576; H10N60/0604; Y; Y10; Y10S; Y10S505/00; Y10S505/725; Y10S505/729; Y10S505/73; Y10S505/732
Claims Analysis
Total Claims: 16
Claim 1
Independent Claim
133 words
A process for producing a superconducting thin film consisting of a single crystal of LnA 2 Cu 3 oxide: [LnA.sub.2 Cu.sub.3 O.sub.7-x ] (I) wherein Ln is at least one rare earth element selected from the group consisting of Y, Nd, Sm, Eu, Gd, Dy, Ho, Er, Tm and Yb and A is at least one alkaline earth metal selected from the group consisting of Ba, Sr and Ca which has a three-layered perovskite structure, which comprises simultaneously evaporating Ln, A and Cu in an atomic ratio of about 1:2:3 from discrete evaporation sources of Ln, A and Cu onto a heated substrate in a vacuum vessel while blowing an oxygen gas onto the substrate to form an oxygen-containing atmosphere at the substrate, thereby forming said said superconducting thin film on the substrate.
Claim 2
Dependent Claim
133 words
A process for producing a superconducting thin film consisting of a single crystal of LnA 2 Cu 3 oxide: [LnA.sub.2 Cu.sub.3 O.sub.7-x ] (I) wherein Ln is at least one rare earth element selected from the group consisting of Y, Nd, Sm, Eu, Gd, Dy, Ho, Er, Tm and Yb and A is at least one alkaline earth metal selected from the group consisting of Ba, Sr and Ca which has a three-layered perovskite structure, which comprises simultaneously evaporating Ln, A and Cu in an atomic ratio of about 1:2:3 from discrete evaporation sources of Ln, A and Cu onto a heated substrate in a vacuum vessel while blowing an oxygen gas onto the substrate to form an oxygen-containing atmosphere at the substrate, thereby forming said said superconducting thin film on the substrate.
Claim 3
Dependent Claim
38 words
The process according to claim 1, wherein a single crystal is used as the substrate with its (001) plane forming the substrate surface, and a (001) plane of the formed single crystal is parallel with the film surface.
Claim 4
Dependent Claim
20 words
The process according to claim 2, wherein the substrate is heated at a temperature of not lower than 500° C.
Claim 5
Dependent Claim
38 words
The process according to claim 1, wherein a single crystal is used as the substrate with its (110) plane forming the substrate surface, and a (110) plane of the formed single crystal is parallel with the film surface.
Claim 6
Dependent Claim
81 words
The process according to claim 4, wherein firstly the thin film of the single crystal of the oxide in which its (110) plane is parallel with the film surface is formed on the substrate heated at a temperature not lower than 500° C. and lower than 550° C., and then the oxide in which its (110) plane is parallel with the film surface is deposited on the firstly formed thin film heated at a temperature of not lower than 550° C.
Claim 7
Dependent Claim
38 words
The process according to claim 1, wherein a single crystal is used as the substrate with its (110) plane forming the substrate surface, and a (103) plane of the formed single crystal is parallel with the film surface.
Claim 8
Dependent Claim
20 words
The process according to claim 6, wherein the substrate is heated at a temperature of not lower than 550° C.
Claim 9
Dependent Claim
89 words
A process for producing a superconducting thin film of a single crystal of LnA 2 Cu 3 oxide, which comprises simultaneously evaporating Ln, A and Cu in an atomic ratio of about 1:2:3 from discrete evaporation sources of Ln, A and Cu to deposit them on a substrate in a vacuum vessel while oxygen plasma is generated between the evaporation sources and the substrate and blowing onto the substrate an oxygen gas to form an oxygen-containing atmosphere at the substrate, thereby forming said superconducting thin film on the substrate.
Claim 10
Dependent Claim
89 words
A process for producing a superconducting thin film of a single crystal of LnA 2 Cu 3 oxide, which comprises simultaneously evaporating Ln, A and Cu in an atomic ratio of about 1:2:3 from discrete evaporation sources of Ln, A and Cu to deposit them on a substrate in a vacuum vessel while oxygen plasma is generated between the evaporation sources and the substrate and blowing onto the substrate an oxygen gas to form an oxygen-containing atmosphere at the substrate, thereby forming said superconducting thin film on the substrate.
Claim 11
Dependent Claim
38 words
The process according to claim 8, wherein a single crystal is used as the substrate with its (001) plane forming the substrate surface, and a (001) plane of the formed single crystal is parallel with the film surface.
Claim 12
Dependent Claim
20 words
The process according to claim 9, wherein the substrate is heated at a temperature of not lower than 500° C.
Claim 13
Dependent Claim
38 words
The process according to claim 8, wherein a single crystal is used as the substrate with its (110) plane forming the substrate surface, and a (110) plane of the formed single crystal is parallel with the film surface.
Claim 14
Dependent Claim
81 words
The process according to claim 11, wherein firstly the thin film of the single crystal of the oxide in which its (110) plane is parallel with the film surface is formed on the substrate heated at a temperature not lower than 500° C. and lower than 550° C., and then the oxide in which its (110) plane is parallel with the film surface is deposited on the firstly formed thin film heated at a temperature of not lower than 550° C.
Claim 15
Dependent Claim
38 words
The process according to claim 8, wherein a single crystal is used as the substrate with its (110) plane forming the substrate surface, and a (103) plane of the formed single crystal is parallel with the film surface.
Claim 16
Dependent Claim
20 words
The process according to claim 13, wherein the substrate is heated at a temperature of not lower than 550° C.
References Cited (Backward Citations)
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