US5362350A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method for etching in dry process
Assignee: Sony Corp
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Filing: 1993-11-24
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Granted: 1994-11-08
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Expires: 2013-11-24
Abstract
Abstract A method for etching a copper layer in dry process includes the steps of forming a copper layer on a substrate, heating the substrate, etching the copper layer while using an etching gas. The etching gas includes iodine halide such as pentafuluoride, ioeine heptafuluoride, iodine monochloride and iodine trichloride. The copper layer is etched while sublimating cuprous iodide of a reaction product.
Inventors
- 👤 Toshiharu Yanagida
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-30 06:29
CPC Classifications
C; C23; C23F; C23F4/00; H; H10; H10P; H10P50/00; H10P50/20; H10P50/26; H10P50/264; H10P50/266; H10P50/267
Claims Analysis
Total Claims: 16
Claim 1
Independent Claim
42 words
A method for etching a copper layer in dry process comprising the steps of: forming a copper layer on a substrate; heating said substrate; etching said copper layer while using an etching gas; and wherein said etching gas comprises an iodine halide.
Claim 2
Independent Claim
42 words
A method for etching a copper layer in dry process comprising the steps of: forming a copper layer on a substrate; heating said substrate; etching said copper layer while using an etching gas; and wherein said etching gas comprises an iodine halide.
Claim 3
Dependent Claim
34 words
A method for etching a copper layer in dry process according to claim 1, wherein said iodine halide is selected from the group consisting of iodine pentafuluoride, iodine heptafuluoride, iodine monochloride and iodine trichloride.
Claim 4
Dependent Claim
28 words
A method for etching a copper layer in dry process according to claim 1, wherein said copper layer is etched while sublimating cuprous iodide of a reaction product.
Claim 5
Dependent Claim
41 words
A method for etching a copper layer in dry process according to claim 1, wherein said copper layer is etched while building up a reaction product being cuprous fuluoride or cuprous chloride on said substrate as a side wall protect layer.
Claim 6
Dependent Claim
42 words
A method for etching a copper layer in dry process according to claim 1, wherein said heating temperature is not smaller than the temperature which cuprous iodide is sublimated and smaller than the temperature which cuprous fuluoride and cuprous chloride are sublimated.
Claim 7
Dependent Claim
28 words
A method for etching a copper layer in dry process according to claim 1, wherein said heating temperature is at a temperature of 150° C. to 220° C.
Claim 8
Dependent Claim
47 words
A method for etching a copper layer in dry process according to claim 1, further comprising the steps of forming a photo resist layer in a certain pattern on said copper layer and etching said copper layer while masking said copper layer with said photo resist layer.
Claim 9
Independent Claim
91 words
A method for etching a copper layer in dry process comprising the steps of: forming a copper layer on a substrate; heating said substrate; first etching for etching said copper layer until it is just before an etched depth is the same as a thickness of said copper layer while using an etching gas; second etching for etching a residual copper while using an etching gas; and wherein said etching gas for said first etching comprises iodine halide, said etching gas for said second etching comprises iodine halide and bromide gas.
Claim 10
Independent Claim
91 words
A method for etching a copper layer in dry process comprising the steps of: forming a copper layer on a substrate; heating said substrate; first etching for etching said copper layer until it is just before an etched depth is the same as a thickness of said copper layer while using an etching gas; second etching for etching a residual copper while using an etching gas; and wherein said etching gas for said first etching comprises iodine halide, said etching gas for said second etching comprises iodine halide and bromide gas.
Claim 11
Dependent Claim
30 words
A method for etching a copper layer in dry process according to claim 8, said bromide gas is selected from the group consisting of hydrogen bromide, bromine and boron tribromide.
Claim 12
Dependent Claim
28 words
A method for etching a copper layer in dry process according to claim 8, wherein said residual copper is etched while sublimating cuprous iodide of a reaction product.
Claim 13
Dependent Claim
48 words
A method for etching a copper layer in dry process according to claim 8, wherein said residual copper is etched while building up a reaction product selected from the group consisting of cuprous fuluoride, cuprous bromide and cuprous chloride on said substrate as a side wall protect layer.
Claim 14
Dependent Claim
44 words
A method for etching a copper layer in dry process according to claim 8, wherein said heating temperature is not smaller than the tempeture which cuprous iodide is sublimated and smaller than the temperature which cuprous fuluoride, cuprous chloride and cuprous bromide are sublimated.
Claim 15
Dependent Claim
28 words
A method for etching a copper layer in dry process according to claim 8, wherein said heating tempetature is at a temperature of 150° C. to 220° C.
Claim 16
Dependent Claim
47 words
A method for etching a copper layer in dry process according to claim 8, further comprising the steps of forming a photo resist layer in a certain pattern on said copper layer and etching said residual copper while masking said copper layer with said photo resist layer.
References Cited (Backward Citations)
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