US5281304A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Process for forming copper wiring
Assignee: Sony Corp
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Filing: 1992-05-29
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Granted: 1994-01-25
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Expires: 2012-05-29
Abstract
Abstract A process for forming a copper wiring is composed of modifying a surface of a copper film to copper sulfide, forming the wiring pattern by etching to define a desired design of the wiring, reducing copper sulfide film to copper, and applying an insulation film to the surroundings of the wiring pattern of copper. Successively forming of the wiring is done by processing in a multichamber equipment having functions of the above.
Inventors
- 👤 Shingo Kadomura
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-01 07:42
CPC Classifications
C; C23; C23F; C23F4/00; C23C; C23C8/00; C23C8/06; H; H10; H10W; H10W20/00; H10W20/01; H10W20/031
Claims Analysis
Total Claims: 17
Claim 1
Independent Claim
64 words
A process for forming a copper wiring comprising the steps of: modifying a surface of a copper film by a chemical reaction to form a copper compound having characteristics of inhibiting oxidation, etching said film and said copper compound to patternize a wiring, reducing said patternized copper compound to copper, and insulating said copper film by applying an insulation film to the surroundings thereof.
Claim 2
Dependent Claim
64 words
A process for forming a copper wiring comprising the steps of: modifying a surface of a copper film by a chemical reaction to form a copper compound having characteristics of inhibiting oxidation, etching said film and said copper compound to patternize a wiring, reducing said patternized copper compound to copper, and insulating said copper film by applying an insulation film to the surroundings thereof.
Claim 3
Dependent Claim
15 words
A process as set forth in claim 1, wherein said copper compound is copper sulfide.
Claim 4
Dependent Claim
31 words
A process as set forth in claim 1, wherein said modifying step includes supplying ammonium hydrogensulfide to said copper film under vacuum condition with heating at a temperature of 200° C.
Claim 5
Dependent Claim
43 words
A process as set forth in claim 1, wherein said modifying step includes supplying a gas mixture containing hydrogen and hydrogen sulfide to said copper film under ordinary pressure balanced to that of ambient atmosphere with heating at a temperature of 200° C.
Claim 6
Dependent Claim
23 words
A process as set forth in claim 4, wherein the contained ratio of said hydrogen to said hydrogen sulfide is adjusted to 1:1.
Claim 7
Dependent Claim
38 words
A process as set forth in claim 1, wherein said reducing step includes subjecting said copper film on which said copper sulfide is laid to an atmosphere containing ammonia gas with heating at a temperature of 250° C.
Claim 8
Dependent Claim
43 words
A process as set forth in claim 1, wherein said reducing step includes subjecting said copper film on which said copper sulfide is laid to a mixture containing ammonium hydroxide and hydrogen peroxide, and boiling said film at a temperature of 80° C.
Claim 9
Dependent Claim
29 words
A process as set forth in claim 7, wherein the contained ratio of said ammonium hydroxide to said hydrogen peroxide is adjusted in a range from 2:1 to 2.95:0.05.
Claim 10
Dependent Claim
64 words
A process for forming a copper wiring comprising the steps of: modifying a surface of a copper film to copper sulfide to inhibit oxygen contact with said copper film, etching said film on which said copper sulfide is laid to patternize a wiring, reducing said patternized copper sulfide to copper, and insulating said copper film by applying an insulation film to the surroundings thereof.
Claim 11
Dependent Claim
64 words
A process for forming a copper wiring comprising the steps of: modifying a surface of a copper film to copper sulfide to inhibit oxygen contact with said copper film, etching said film on which said copper sulfide is laid to patternize a wiring, reducing said patternized copper sulfide to copper, and insulating said copper film by applying an insulation film to the surroundings thereof.
Claim 12
Dependent Claim
31 words
A process as set forth in claim 9, wherein said modifying step includes supplying ammonium hydrogensulfide to said copper film under vacuum condition with heating at a temperature of 200° C.
Claim 13
Dependent Claim
44 words
A process as set forth in claim 9, wherein said modifying step includes supplying a gas mixture containing hydrogen and hydrogen sulfide to said copper film under ordinary pressure balanced to that of an ambient atmosphere with heating at a temperature of 200° C.
Claim 14
Dependent Claim
23 words
A process as set forth in claim 11, wherein the contained ratio of said hydrogen to said hydrogen sulfide is adjusted to 1:1.
Claim 15
Dependent Claim
38 words
A process as set forth in claim 9, wherein said reducing step includes subjecting said copper film on which said copper sulfide is laid to an atmosphere containing ammonia gas with heating at a temperature of 250° C.
Claim 16
Dependent Claim
43 words
A process as set forth in claim 9, wherein said reducing step includes subjecting said copper film on which said copper sulfide is layer to a mixture containing ammonium hydroxide and hydrogen peroxide, and boiling said film at a temperature of 80° C.
Claim 17
Dependent Claim
29 words
A process as set forth in claim 14, wherein the contained ratio of said ammonium hydroxide to said hydrogen peroxide is adjusted in a range from 2:1 to 2.95:0.05.
References Cited (Backward Citations)
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| 3.5 Years (Year 4) | 1997-01-24 | 1997-07-26 | 1998-01-25 | $2000.00 | Window Closed / Lapsed |
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