US5360752A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method to radiation harden the buried oxide in silicon-on-insulator structures
Assignee: Lockheed Martin Corp
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Filing: 1993-10-28
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Granted: 1994-11-01
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Expires: 2013-10-28
Abstract
Abstract A method of forming a radiation hardened SOI structure is disclosed. The buried oxide layer of an SOI structure is hardened prior to the bonding of a device wafer which forms the silicon portion of the silicon-on-insulator. The radiation hardening is done by implantation of recombination center-generating impurities. All the radiation hardening is done prior to the bonding of the device silicon layer and allows for radiation hardening of the buried oxide layer of an SOI structure without any damage to the silicon device layer.
Inventors
- 👤 Frederick T. Brady
- 👤 Nadim F. Haddad
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-04 10:42
CPC Classifications
H; H10; H10P; H10P90/00; H10P90/19; H10P90/1904; H10P90/1906; H10P90/1914; H10W; H10W10/00; H10W10/10; H10W10/181; Y; Y10; Y10S; Y10S148/00; Y10S148/012
Claims Analysis
Total Claims: 11
Claim 1
Independent Claim
87 words
A method of forming a silicon-on-insulator structure that is radiation hardened comprising the steps of: selecting a first silicon substrate; forming a oxide layer on the first silicon substrate; implanting ions to form recombination center generating impurities within the oxide layer; bonding a second silicon substrate to the implanted oxide layer to form a bonded substrate structure; annealing the bonded structure at a temperature of less than 850° C.; etching back the second silicon substrate to a desired thickness to form a silicon-on-insulator structure having radiation hardening.
Claim 2
Independent Claim
87 words
A method of forming a silicon-on-insulator structure that is radiation hardened comprising the steps of: selecting a first silicon substrate; forming a oxide layer on the first silicon substrate; implanting ions to form recombination center generating impurities within the oxide layer; bonding a second silicon substrate to the implanted oxide layer to form a bonded substrate structure; annealing the bonded structure at a temperature of less than 850° C.; etching back the second silicon substrate to a desired thickness to form a silicon-on-insulator structure having radiation hardening.
Claim 3
Dependent Claim
16 words
The method of claim 1 wherein a cleaning step is performed prior to the bonding step.
Claim 4
Dependent Claim
32 words
The method of claim 1 wherein the implantation step is performed in two steps comprising a deep implant and a shallow implant to form a nearly uniform recombination center generating impurity profile.
Claim 5
Dependent Claim
18 words
The method of claim 1 wherein the oxide is thermally grown to a thickness range of 3500-4500 angstroms.
Claim 6
Dependent Claim
13 words
The method of claim 1 wherein the anneal is done at 800° C.
Claim 7
Independent Claim
109 words
A method of forming a silicon-on-insulator structure that is radiation hardened comprising the steps of: selecting a first silicon substrate; growing a thermal oxide layer on the order of 4000 angstroms on a surface of the silicon substrate; ion implanting impurities into the oxide layer to form recombination center generating sites; selecting a second silicon substrate; cleaning the second silicon substrate; bonding the second silicon substrate to the oxide layer grown on the first silicon substrate; annealing the bonded structure at a temperature of less than 850° C.; etching back the second silicon substrate to a thickness range of 70-100 nm to form a silicon-on-insulator structure having radiation hardening.
Claim 8
Independent Claim
109 words
A method of forming a silicon-on-insulator structure that is radiation hardened comprising the steps of: selecting a first silicon substrate; growing a thermal oxide layer on the order of 4000 angstroms on a surface of the silicon substrate; ion implanting impurities into the oxide layer to form recombination center generating sites; selecting a second silicon substrate; cleaning the second silicon substrate; bonding the second silicon substrate to the oxide layer grown on the first silicon substrate; annealing the bonded structure at a temperature of less than 850° C.; etching back the second silicon substrate to a thickness range of 70-100 nm to form a silicon-on-insulator structure having radiation hardening.
Claim 9
Independent Claim
109 words
A method of forming a silicon-on-insulator structure that is radiation hardened comprising the steps of: selecting a first and a second silicon substrate; oxidizing both first and second silicon substrates to form an oxide layer on a surface of the silicon substrates; implanting ions to form recombination center generating impurities in the oxide layers of both first and second silicon substrates; bonding the oxide layers of the first and second silicon substrates together to form a bonded substrate structure; annealing the bonded structure at a temperature of less than 850° C.; etching back the second silicon substrate to a desired thickness to form a silicon-on-insulator structure having radiation hardening.
Claim 10
Independent Claim
109 words
A method of forming a silicon-on-insulator structure that is radiation hardened comprising the steps of: selecting a first and a second silicon substrate; oxidizing both first and second silicon substrates to form an oxide layer on a surface of the silicon substrates; implanting ions to form recombination center generating impurities in the oxide layers of both first and second silicon substrates; bonding the oxide layers of the first and second silicon substrates together to form a bonded substrate structure; annealing the bonded structure at a temperature of less than 850° C.; etching back the second silicon substrate to a desired thickness to form a silicon-on-insulator structure having radiation hardening.
Claim 11
Dependent Claim
20 words
The method of claim 1 wherein the implanted impurities are deep recombination center generating species, such as germaniam or arsenic.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1997-10-31 | 1998-05-02 | 1998-11-01 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2001-10-31 | 2002-05-02 | 2002-11-01 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2005-10-31 | 2006-05-02 | 2006-11-01 | $7700.00 | Window Closed / Lapsed |