Patent US5358807A successfully refreshed from Google Patents.
US5358807A
Expired / Lapsed
US
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Mask for manufacturing semiconductor device and method of manufacture thereof
Assignee: Renesas Electronics Corp
•
Filing: 1993-07-07
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Granted: 1994-10-25
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Expires: 2013-07-07
Abstract
Abstract The present invention relates to a microminiaturization technique to achieve the miniaturization and higher integration of IC chips and to the improvement of a mask used in its manufacturing process. In other words, the phases of lights transmitted through the mask is controlled within one mask pattern. Specifically, a transparent film is formed in such a manner that it covers a mask pattern along a pattern formed by magnifying or demagnifying the mask pattern, or otherwise a groove is formed in a mask substrate. A phase difference of 180° is generated between the lights transmitted through the mask substrate and the transparent film or the groove, causing interference with each light to offset each other. Therefore, the pattern transferred onto a wafer has an improved resolution, being used in the invention.
Inventors
- 👤 Yoshihiko Okamoto
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-07 21:46
CPC Classifications
G; G03; G03F; G03F1/00; G03F1/26; G03F1/29; G03F1/30; H; H10; H10P; H10P76/00; G03F7/00; G03F7/20; G03F7/2022; Y; Y10; Y10S; Y10S438/00; Y10S438/942; Y10S438/948
Claims Analysis
Total Claims: 131
Claim 1
Independent Claim
178 words
A semiconductor device projection exposure method for transferring a pattern, on a mask, onto a semiconductor wafer, the method comprising: exposing the mask to an exposure light beam having a predetermined wavelength, the mask comprising a transmission region substantially transparent with respect to the exposure light beam, with at least one phase-shifting region formed in a part of said transmission region, the transmission region having a phase non-reversing region and a phase reversing region for substantially reversing the phase of a transmitted light, without substantially attenuating the amplitude of the transmitted light, relative to the phase non-reversing region and bordering on the phase non-reversing region, one of the phase non-reversing region and the phase reversing region corresponding to the at least one phase-shifting region, whereby resolution is improved due to destructive interference between light beams from both vicinity sides of a boundary between the phase reversing region and the phase non-reversing region; and focusing a clear image of the pattern, on the mask, onto a light sensitive resist film on the semiconductor wafer through an optical projection system.
Claim 2
Dependent Claim
178 words
A semiconductor device projection exposure method for transferring a pattern, on a mask, onto a semiconductor wafer, the method comprising: exposing the mask to an exposure light beam having a predetermined wavelength, the mask comprising a transmission region substantially transparent with respect to the exposure light beam, with at least one phase-shifting region formed in a part of said transmission region, the transmission region having a phase non-reversing region and a phase reversing region for substantially reversing the phase of a transmitted light, without substantially attenuating the amplitude of the transmitted light, relative to the phase non-reversing region and bordering on the phase non-reversing region, one of the phase non-reversing region and the phase reversing region corresponding to the at least one phase-shifting region, whereby resolution is improved due to destructive interference between light beams from both vicinity sides of a boundary between the phase reversing region and the phase non-reversing region; and focusing a clear image of the pattern, on the mask, onto a light sensitive resist film on the semiconductor wafer through an optical projection system.
Claim 3
Dependent Claim
32 words
A semiconductor device projection exposure method according to claim 1, wherein a width of the phase reversing region is sufficiently narrow so as not to form an independent bright image corresponding thereto.
Claim 4
Dependent Claim
38 words
A semiconductor device projection exposure method according to claim 2, wherein the mask further includes a metal light-shield region for shielding the exposure light beam, the metal light-shield region bordering on the phase reversing region of the mask.
Claim 5
Dependent Claim
38 words
A semiconductor device projection exposure method according to claim 1, wherein the mask further includes a metal light-shield region for shielding the exposure light beam, the metal light-shield region bordering on the phase reversing region of the mask.
Claim 6
Dependent Claim
189 words
A semiconductor device projection exposure method for transferring a pattern, on a mask, onto a semiconductor wafer, the method comprising: exposing the mask to an exposure light beam having a predetermined wavelength, the mask comprising a transmission region substantially transparent with respect to the exposure light beam, with at least one phase-shifting region formed in a part of said transmission region, the transmission region having a phase non-reversing region and a phase reversing region for substantially reversing the phase of a transmitted light relative to the phase non-reversing and bordering on the phase non-reversing region, one of the phase non-reversing region and the phase reversing region corresponding to the at least one phase-shifting region, a width of the phase reversing region being sufficiently narrow so as not to form an independent bright image corresponding thereto, whereby resolution is improved due to destructive interference between light beams from both vicinity sides of a boundary between the phase non-reversing region and the phase reversing region; and focusing a clear image of the pattern, on the mask, onto a light sensitive resist film on the semiconductor wafer through an optical projection system.
Claim 7
Dependent Claim
189 words
A semiconductor device projection exposure method for transferring a pattern, on a mask, onto a semiconductor wafer, the method comprising: exposing the mask to an exposure light beam having a predetermined wavelength, the mask comprising a transmission region substantially transparent with respect to the exposure light beam, with at least one phase-shifting region formed in a part of said transmission region, the transmission region having a phase non-reversing region and a phase reversing region for substantially reversing the phase of a transmitted light relative to the phase non-reversing and bordering on the phase non-reversing region, one of the phase non-reversing region and the phase reversing region corresponding to the at least one phase-shifting region, a width of the phase reversing region being sufficiently narrow so as not to form an independent bright image corresponding thereto, whereby resolution is improved due to destructive interference between light beams from both vicinity sides of a boundary between the phase non-reversing region and the phase reversing region; and focusing a clear image of the pattern, on the mask, onto a light sensitive resist film on the semiconductor wafer through an optical projection system.
Claim 8
Dependent Claim
38 words
A semiconductor device projection exposure method according to claim 5, wherein the mask further includes a metal light-shield region for shielding the exposure light beam, the metal light-shield region bordering on the phase reversing region of the mask.
Claim 9
Dependent Claim
178 words
A semiconductor device projection exposure method for transferring a pattern, on a mask, onto a semiconductor wafer, the method comprising; exposing the mask to an exposure light beam having a predetermined wavelength, the mask comprising a transmission region substantially transparent with respect to the exposure light beam, with at least one phase-shifting region formed in a part of said transmission region, the transmission region having a first transmission region and a second transmission region for substantially reversing the phase of a transmitted light, without substantially attenuating the amplitude of the transmitted light, relative to the first transmission region and bordering on the first transmission region, one of the first transmission region and the second transmission region corresponding to the at least one phase-shifting region, whereby resolution is improved due to destructive interference between light beams from both vicinity sides of a boundary between the second transmission region and the first transmission region; and focusing a clear image of the pattern, on the mask, onto a light sensitive resist film on the semiconductor wafer through an optical projection system.
Claim 10
Dependent Claim
178 words
A semiconductor device projection exposure method for transferring a pattern, on a mask, onto a semiconductor wafer, the method comprising; exposing the mask to an exposure light beam having a predetermined wavelength, the mask comprising a transmission region substantially transparent with respect to the exposure light beam, with at least one phase-shifting region formed in a part of said transmission region, the transmission region having a first transmission region and a second transmission region for substantially reversing the phase of a transmitted light, without substantially attenuating the amplitude of the transmitted light, relative to the first transmission region and bordering on the first transmission region, one of the first transmission region and the second transmission region corresponding to the at least one phase-shifting region, whereby resolution is improved due to destructive interference between light beams from both vicinity sides of a boundary between the second transmission region and the first transmission region; and focusing a clear image of the pattern, on the mask, onto a light sensitive resist film on the semiconductor wafer through an optical projection system.
Claim 11
Dependent Claim
32 words
A semiconductor device projection exposure method according to claim 7, wherein a width of the second transmission region is sufficiently narrow so as not to form an independent bright image corresponding thereto.
Claim 12
Dependent Claim
38 words
A semiconductor device projection exposure method according to claim 7, wherein the mask further includes a metal light-shield region for shielding the exposure light beam, the metal light-shield region bordering on the second transmission region of the mask.
Claim 13
Dependent Claim
190 words
A semiconductor device projection exposure method for transferring a pattern, on a mask, onto a semiconductor wafer, the method comprising: exposing the mask to an exposure light beam having a predetermined wavelength, the mask comprising a transmission region substantially transparent with respect to the exposure light beam, with at least one phase-shifting region formed in a part of said transmission region, the transmission region having a first transmission region and a second transmission region for substantially reversing the phase of a transmitted light relative to the first transmission region and bordering on the first transmission region, one of the first transmission region and the second transmission region corresponding to the at least one phase-shifting region, a width of the second transmission region being sufficiently narrow so as not to form an independent bright image corresponding thereto, whereby resolution is improved due to destructive interference between light beams from both vicinity sides of a boundary between the first transmission region and the second transmission region; and focusing a clear image of the pattern, on the mask, onto a light sensitive resist film on the semiconductor wafer through an optical projection system.
Claim 14
Dependent Claim
190 words
A semiconductor device projection exposure method for transferring a pattern, on a mask, onto a semiconductor wafer, the method comprising: exposing the mask to an exposure light beam having a predetermined wavelength, the mask comprising a transmission region substantially transparent with respect to the exposure light beam, with at least one phase-shifting region formed in a part of said transmission region, the transmission region having a first transmission region and a second transmission region for substantially reversing the phase of a transmitted light relative to the first transmission region and bordering on the first transmission region, one of the first transmission region and the second transmission region corresponding to the at least one phase-shifting region, a width of the second transmission region being sufficiently narrow so as not to form an independent bright image corresponding thereto, whereby resolution is improved due to destructive interference between light beams from both vicinity sides of a boundary between the first transmission region and the second transmission region; and focusing a clear image of the pattern, on the mask, onto a light sensitive resist film on the semiconductor wafer through an optical projection system.
Claim 15
Dependent Claim
38 words
A semiconductor device projection exposure method according to claim 10, wherein the mask further includes a metal light-shield region for shielding the exposure light beam, the metal light-shield region bordering on the second transmission region of the mask.
Claim 16
Dependent Claim
145 words
A semiconductor device projection exposure method for transferring a pattern, on a mask, onto a semiconductor wafer, the method comprising: exposing the mask to an exposure light beam having a predetermined wavelength, the mask having a transmission region substantially transparent with respect to the exposure light beam, the transmission region having a first transmission region and a second transmission region for substantially reversing the phase of a transmitted light, without substantially attenuating the amplitude of the transmitted light, relative to the first transmission region and bordering on the first transmission region, whereby resolution is improved due to destructive interference between light beams from both vicinity sides of a boundary between the second transmission region and the first transmission region; and focusing a clear image of the pattern, on the mask, onto a light sensitive resist film on the semiconductor wafer through an optical projection system.
Claim 17
Dependent Claim
145 words
A semiconductor device projection exposure method for transferring a pattern, on a mask, onto a semiconductor wafer, the method comprising: exposing the mask to an exposure light beam having a predetermined wavelength, the mask having a transmission region substantially transparent with respect to the exposure light beam, the transmission region having a first transmission region and a second transmission region for substantially reversing the phase of a transmitted light, without substantially attenuating the amplitude of the transmitted light, relative to the first transmission region and bordering on the first transmission region, whereby resolution is improved due to destructive interference between light beams from both vicinity sides of a boundary between the second transmission region and the first transmission region; and focusing a clear image of the pattern, on the mask, onto a light sensitive resist film on the semiconductor wafer through an optical projection system.
Claim 18
Dependent Claim
32 words
A semiconductor device projection exposure method according to claim 12, wherein a width of the second transmission region is sufficiently narrow so as not to form an independent bright image corresponding thereto.
Claim 19
Dependent Claim
38 words
A semiconductor device projection exposure method according to claim 12, wherein the mask further includes a metal light-shield region for shielding the exposure light beam, the metal light-shield region bordering on the second transmission region of the mask.
Claim 20
Dependent Claim
157 words
A semiconductor device projection exposure method for transferring a pattern, on a mask, onto a semiconductor wafer, the method comprising: exposing the mask to an exposure light beam having a predetermined wavelength, the mask having a transmission region substantially transparent with respect to the exposure light beam, the transmission region having a first transmission region and a second transmission region for substantially reversing the phase of a transmitted light relative to the first transmission region and bordering on the first transmission region, a width of the second transmission region being sufficiently narrow so as not to form an independent bright image corresponding thereto, whereby resolution is improved due to destructive interference between light beams from both vicinity sides of a boundary between the first transmission region and the second transmission region; and focusing a clear image of the pattern, on the mask, onto a light sensitive resist film on the semiconductor wafer through an optical projection system.
Claim 21
Dependent Claim
157 words
A semiconductor device projection exposure method for transferring a pattern, on a mask, onto a semiconductor wafer, the method comprising: exposing the mask to an exposure light beam having a predetermined wavelength, the mask having a transmission region substantially transparent with respect to the exposure light beam, the transmission region having a first transmission region and a second transmission region for substantially reversing the phase of a transmitted light relative to the first transmission region and bordering on the first transmission region, a width of the second transmission region being sufficiently narrow so as not to form an independent bright image corresponding thereto, whereby resolution is improved due to destructive interference between light beams from both vicinity sides of a boundary between the first transmission region and the second transmission region; and focusing a clear image of the pattern, on the mask, onto a light sensitive resist film on the semiconductor wafer through an optical projection system.
Claim 22
Dependent Claim
38 words
A semiconductor device projection exposure method according to claim 15, wherein the mask further includes a metal light-shield region for shielding the exposure light beam, the metal light-shield region bordering on the second transmission region of the mask.
Claim 23
Dependent Claim
149 words
A semiconductor device reduction projection exposure method for transferring an enlarged pattern, on a mask, onto a semiconductor wafer, the method comprising: exposing the mask to an exposure light beam of a predetermined wavelength, the mask having a transmission region substantially transparent with respect to the exposure light beam, the transmission region having a first transmission region and a second transmission region for substantially reversing the phase of a transmitted light, without substantially attenuating the amplitude of the transmitted light, relative to the first transmission region and bordering on the first transmission region, whereby resolution is improved due to destructive interference between light beams from both vicinity sides of a boundary between the second transmission region and the first transmission region; and focusing a clear image of the enlarged pattern, on the mask, onto a light sensitive resist film on the semiconductor wafer through an optical reduction projection system.
Claim 24
Dependent Claim
149 words
A semiconductor device reduction projection exposure method for transferring an enlarged pattern, on a mask, onto a semiconductor wafer, the method comprising: exposing the mask to an exposure light beam of a predetermined wavelength, the mask having a transmission region substantially transparent with respect to the exposure light beam, the transmission region having a first transmission region and a second transmission region for substantially reversing the phase of a transmitted light, without substantially attenuating the amplitude of the transmitted light, relative to the first transmission region and bordering on the first transmission region, whereby resolution is improved due to destructive interference between light beams from both vicinity sides of a boundary between the second transmission region and the first transmission region; and focusing a clear image of the enlarged pattern, on the mask, onto a light sensitive resist film on the semiconductor wafer through an optical reduction projection system.
Claim 25
Dependent Claim
33 words
A semiconductor device reduction projection exposure method according to claim 17, wherein a width of the second transmission region is sufficiently narrow so as not to form an independent bright image corresponding thereto.
Claim 26
Dependent Claim
38 words
A semiconductor device projection exposure method according to claim 18, wherein the mask further includes a metal light-shield region for shielding the exposure light beam, the metal light-shield region bordering on the second transmission region of the mask.
Claim 27
Dependent Claim
39 words
A semiconductor device reduction projection exposure method according to claim 19, wherein the mask further includes a metal light-shield region for shielding the exposure light beam, the metal light-shield region bordering on the second transmission region of the mask.
Claim 28
Dependent Claim
181 words
A semiconductor device reduction projection exposure method for transferring an enlarged pattern, on a mask, onto a semiconductor wafer, the method comprising: exposing the mask to an exposure light beam having a predetermined wavelength, the mask comprising a transmission region substantially transparent with respect to the exposure light beam, with at least one phase-shifting region formed in a part of said transmission region, the transmission region having a phase non-reversing region and phase reversing region for substantially reversing the phase of a transmitted light, without substantially attenuating the amplitude of the transmitted light, relative to the phase non-reversing region and bordering on the phase non-reversing region, one of the phase non-reversing region and the phase reversing region corresponding to the at least one phase-shifting region, whereby resolution is improved due to destructive interference between light beams from both vicinity sides of a boundary between the phase reversing region and the phase non-reversing region; and focusing a clear image of the enlarged pattern, on the mask, onto a light sensitive resist film on the semiconductor wafer through an optical reduction projection system.
Claim 29
Dependent Claim
181 words
A semiconductor device reduction projection exposure method for transferring an enlarged pattern, on a mask, onto a semiconductor wafer, the method comprising: exposing the mask to an exposure light beam having a predetermined wavelength, the mask comprising a transmission region substantially transparent with respect to the exposure light beam, with at least one phase-shifting region formed in a part of said transmission region, the transmission region having a phase non-reversing region and phase reversing region for substantially reversing the phase of a transmitted light, without substantially attenuating the amplitude of the transmitted light, relative to the phase non-reversing region and bordering on the phase non-reversing region, one of the phase non-reversing region and the phase reversing region corresponding to the at least one phase-shifting region, whereby resolution is improved due to destructive interference between light beams from both vicinity sides of a boundary between the phase reversing region and the phase non-reversing region; and focusing a clear image of the enlarged pattern, on the mask, onto a light sensitive resist film on the semiconductor wafer through an optical reduction projection system.
Claim 30
Dependent Claim
33 words
A semiconductor device reduction projection exposure method according to claim 21, wherein a width of the phase reversing region is sufficiently narrow so as not to form an independent bright image corresponding thereto.
Claim 31
Dependent Claim
38 words
A semiconductor device projection exposure method according to claim 22, wherein the mask further includes a metal light-shield region for shielding the exposure light beam, the metal light-shield region bordering on the phase reversing region of the mask.
Claim 32
Dependent Claim
39 words
A semiconductor device reduction projection exposure method according to claim 21, wherein the mask further includes a metal light-shield region for shielding the exposure light beam, the metal light-shield region bordering on the second transmission region of the mask.
Claim 33
Dependent Claim
271 words
An optical mask having a transparent mask substrate with a first major surface and a second major surface, and a circuit pattern on the first major surface of the mask substrate, for exposing the circuit pattern to an exposure light beam having a predetermined wavelength, to form a real image of the circuit pattern on a photoresist film on an integrated circuit wafer on which an integrated circuit is to be formed through an optical projection system, and thereby to transfer the circuit pattern on the mask substrate onto the integrated circuit wafer as a pattern of the photoresist film, the circuit pattern comprising: (a) a first light shield region for shielding the exposure light beam; (b) a first principal light transmission region, together with the light shield region corresponding to the circuit pattern; and (c) a first auxiliary light transmission region narrower than the first principal light transmission region and disposed between and bordering on both the first light shield region and the first principal light transmission region, wherein the mask has a first phase-shifting means for substantially reversing a phase of the transmitted exposure light beam transmitted through the first auxiliary light transmission region as compared with a phase of the transmitted exposure light beam transmitted through the first principal light transmission region, so as to make an edge portion of the real image clear on the first auxiliary light transmission region side of the first principal light transmission region, and wherein a width of the first auxiliary light transmission region is sufficiently narrow so as not to form an independent bright real image thereof on the photoresist film.
Claim 34
Dependent Claim
271 words
An optical mask having a transparent mask substrate with a first major surface and a second major surface, and a circuit pattern on the first major surface of the mask substrate, for exposing the circuit pattern to an exposure light beam having a predetermined wavelength, to form a real image of the circuit pattern on a photoresist film on an integrated circuit wafer on which an integrated circuit is to be formed through an optical projection system, and thereby to transfer the circuit pattern on the mask substrate onto the integrated circuit wafer as a pattern of the photoresist film, the circuit pattern comprising: (a) a first light shield region for shielding the exposure light beam; (b) a first principal light transmission region, together with the light shield region corresponding to the circuit pattern; and (c) a first auxiliary light transmission region narrower than the first principal light transmission region and disposed between and bordering on both the first light shield region and the first principal light transmission region, wherein the mask has a first phase-shifting means for substantially reversing a phase of the transmitted exposure light beam transmitted through the first auxiliary light transmission region as compared with a phase of the transmitted exposure light beam transmitted through the first principal light transmission region, so as to make an edge portion of the real image clear on the first auxiliary light transmission region side of the first principal light transmission region, and wherein a width of the first auxiliary light transmission region is sufficiently narrow so as not to form an independent bright real image thereof on the photoresist film.
Claim 35
Dependent Claim
36 words
An optical mask according to claim 25, wherein the first phase-shifting means includes a transparent film on an entire surface of one of the first principal light transmission region and the first auxiliary light transmission region.
Claim 36
Dependent Claim
23 words
An optical mask according to claim 26, wherein the transparent film is formed directly on the first major surface of the mask substrate.
Claim 37
Dependent Claim
45 words
An optical mask according to claim 27, wherein the first major surface of the mask substrate is exposed over the entire surface of the other of the first principal transmission region and the first auxiliary transmission region, on which the transparent film is not disposed.
Claim 38
Dependent Claim
38 words
An optical mask according to claim 28, further comprising a metal film formed on the first major surface of the mask substrate on the entire surface of the first light shield region, for shielding the exposure light beam.
Claim 39
Dependent Claim
23 words
An optical mask according to claim 29, wherein the metal film is formed directly on the first major surface of the mask substrate.
Claim 40
Dependent Claim
20 words
An optical mask according to claim 26, wherein the transparent film is disposed on the first principal light transmission region.
Claim 41
Dependent Claim
219 words
An optical mask according to claim 31, the circuit pattern further comprising: (d) a second principal light transmission region, disposed at a side of the first light shield region opposite a side thereof at which the first principal light transmission region is disposed, together with the first principal light transmission region and the first light shield region corresponding to the circuit pattern; and (e) a third auxiliary light transmission region narrower than the second principal light transmission region and disposed between and bordering on both the first light shield region and the second principal light transmission region, wherein the mask has a second phase-shifting means for substantially reversing a phase of the transmitted exposure light beam transmitted through the third auxiliary light transmission region as compared with a phase of the transmitted exposure light beam transmitted through the second principal light transmission region, so as to make an edge portion of the real image clear on the third auxiliary light transmission region side of the second principal light transmission region, wherein the second phase-shifting means includes a transparent film on the entire surface of the second principal light transmission region, and wherein a width of the third auxiliary light transmission region is sufficiently narrow so as not to form an independent bright real image thereof on the photoresist film.
Claim 42
Dependent Claim
42 words
An optical mask according to claim 32, wherein the transparent films on the first and second principal light transmission regions are made of a material selected from the group consisting of indium oxide, silicon dioxide, silicon nitride, magnesium fluoride, and polymethyl methacrylate.
Claim 43
Dependent Claim
37 words
An optical mask according to claim 33, wherein the transparent films on the first and second principal light transmission regions have a thickness substantially minimum to relatively reverse the phase of the transmitted exposure light beam therethrough.
Claim 44
Dependent Claim
37 words
An optical mask according to claim 32, wherein the transparent films on the first and second principal light transmission regions have a thickness substantially minimum to relatively reverse the phase of the transmitted exposure light beam therethrough.
Claim 45
Dependent Claim
33 words
An optical mask according to claim 31, wherein the transparent film is made of a material selected from the group consisting of indium oxide, silicon dioxide, silicon nitride, magnesium fluoride, and polymethyl methacrylate.
Claim 46
Dependent Claim
28 words
An optical mask according to claim 36, wherein the transparent film has a thickness substantially minimum to relatively reverse the phase of the transmitted exposure light beam therethrough.
Claim 47
Dependent Claim
201 words
An optical mask according to claim 31, the circuit pattern further comprising: (d) a second light shield region for shielding the exposure light beam, disposed at a side of the first principal light transmission region opposite a side thereof at which the first light shield region is disposed, together with the first light shield region and first principal light transmission region corresponding to the circuit pattern; and (e) a second auxiliary light transmission region narrower than the first principal light transmission region and disposed between and bordering on both the second light shield region and the first principal light transmission region, wherein a phase of the transmitted exposure light beam transmitted through the second auxiliary light transmission region is substantially reversed as compared with the phase of the transmitted exposure light beam transmitted through the first principal light transmission region, by the first phase-shifting means, so as to make an edge portion of the real image clear on the second auxiliary light transmission region side of the first principal light transmission region, and wherein a width of the second auxiliary light transmission region is sufficiently narrow so s not to form an independent bright real image thereof on the photoresist film.
Claim 48
Dependent Claim
33 words
An optical mask according to claim 38, wherein the transparent film is made of a material selected from the group consisting of indium oxide, silicon dioxide, silicon nitride, magnesium fluoride, and polymethyl methacrylate.
Claim 49
Dependent Claim
28 words
An optical mask according to claim 38, wherein the transparent film has a thickness substantially minimum to relatively reverse the phase of the transmitted exposure light beam therethrough.
Claim 50
Dependent Claim
28 words
An optical mask according to claim 39, wherein the transparent film has a thickness substantially minimum to relatively reverse the phase of the transmitted exposure light beam therethrough.
Claim 51
Dependent Claim
20 words
An optical mask according to claim 26, wherein the transparent film is disposed on the first auxiliary light transmission region.
Claim 52
Dependent Claim
222 words
An optical mask according to claim 42, the circuit pattern further comprising: (d) a second light shield region for shielding the exposure light beam, disposed at a side of the first principal light transmission region opposite a side at which the first light shield region is disposed, together with the first light shield region and first principal light transmission region corresponding to the circuit pattern; and (e) a second auxiliary light transmission region narrower than the first principal light transmission region and disposed between and bordering on both the second light shield region and the first principal light transmission region, wherein the mask has a third phase-shifting means for substantially reversing the phase of the transmitted exposure light beam transmitted through the second auxiliary light transmission region as compared with the phase of the transmitted exposure light beam transmitted through the first principal light transmission region, so as to make an edge portion of the real image clear on the second auxiliary light transmission region side of the first principal light transmission region, wherein the third phase-shifting means includes a transparent film on the entire surface of the second auxiliary light transmission region, and wherein a width of the second auxiliary light transmission region is sufficiently narrow so as not to form an independent bright real time thereof on the photoresist film.
Claim 53
Dependent Claim
42 words
An optical mask according to claim 43, wherein the transparent films on the first and second auxiliary light transmission regions are made of a material selected from the group consisting of indium oxide, silicon dioxide, silicon nitride, magnesium fluoride, and polymethyl methacrylate.
Claim 54
Dependent Claim
37 words
An optical mask according to claim 44, wherein the transparent films on the first and second auxiliary light transmission regions have a thickness substantially minimum to relatively reverse the phase of the transmitted exposure light beam therethrough.
Claim 55
Dependent Claim
37 words
An optical mask according to claim 43, wherein the transparent films on the first and second auxiliary light transmission regions have a thickness substantially minimum to relatively reverse the phase of the transmitted exposure light beam therethrough.
Claim 56
Dependent Claim
218 words
An optical mask according to claim 42, the circuit pattern further comprising: (d) a second principal light transmission region, disposed on a side of the first light shield region opposite a side thereof on which the first principal light transmission region is disposed, together with the first light shield region and first principal light transmission region corresponding to the circuit pattern; and (e) a third auxiliary light transmission region narrower than the second principal light transmission region and disposed between and bordering on both the first light shield region and the second principal light transmission region, wherein the mask has a second phase-shifting means for substantially reversing a phase of the transmitted exposure light beam transmitted through the third auxiliary light transmission region as compared with a phase of the transmitted exposure light beam transmitted through the second principal light transmission region, so as to make an edge portion of the real image clear on the third auxiliary light transmission region side of the second principal light transmission region, wherein the second phase-shifting means includes a transparent film on the entire surface of the third auxiliary light transmission region, and wherein a width of the third auxiliary light transmission region is sufficiently narrow so as not to form an independent bright real image thereof on the photoresist film.
Claim 57
Dependent Claim
42 words
An optical mask according to claim 47, wherein the transparent films on the first and third auxiliary light transmission regions are made of a material selected from the group consisting of indium oxide, silicon dioxide, silicon nitride, magnesium fluoride, and polymethyl methacrylate.
Claim 58
Dependent Claim
37 words
An optical mask according to claim 48, wherein the transparent films on the first and third auxiliary light transmission regions have a thickness substantially minimum to relatively reverse the phase of the transmitted exposure light beam therethrough.
Claim 59
Dependent Claim
33 words
An optical mask according to claim 42, wherein the transparent film is made of a material selected from the group consisting of indium oxide, silicon dioxide, silicon nitride, magnesium fluoride, and polymethyl methacrylate.
Claim 60
Dependent Claim
28 words
An optical mask according to claim 50, wherein the transparent film has a thickness substantially minimum to relatively reverse the phase of the transmitted exposure light beam therethrough.
Claim 61
Dependent Claim
73 words
An optical mask according to claim 25, wherein the first phase-shifting means includes a recess in an entire surface of one of the first principal light transmission region and the first auxiliary light transmission region, a bottom surface of the recess being recessed from a top surface of the other of the first principal light transmission region and the first auxiliary light transmission region toward the second major surface of the mask substrate.
Claim 62
Dependent Claim
22 words
An optical mask according to claim 52, wherein the recess is formed directly in the first major surface of the mask substrate.
Claim 63
Dependent Claim
19 words
An optical mask according to claim 52, wherein the recess is disposed in the first principal light transmission region.
Claim 64
Dependent Claim
201 words
An optical mask according to claim 54, the circuit pattern further comprising: (d) a second light shield region for shielding the exposure light beam, disposed at a side of the first principal light transmission region opposite a side thereof at which the first light shield region is disposed, together with the first light shield region and first principal light transmission region corresponding to the circuit pattern; and (e) a second auxiliary light transmission region narrower than the first principal light transmission region and disposed between and bordering on both the second light shield region and the first principal light transmission region, wherein a phase of the transmitted exposure light beam transmitted through the second auxiliary light transmission region is substantially reversed as compared with a phase of the transmitted exposure light beam transmitted through the first principal light transmission region, by the first phase-shifting means, so as to make an edge portion of the real image clear on the second auxiliary light transmission region side of the first principal light transmission region, and wherein a width of the second auxiliary light transmission region is sufficiently narrow so as not to form an independent bright real image thereof onto the photoresist film.
Claim 65
Dependent Claim
26 words
An optical mask according to claim 55, wherein the recess has a depth substantially minimum to reverse the phase of the transmitted exposure light beam therethrough.
Claim 66
Dependent Claim
217 words
An optical mask according to claim 54, the circuit pattern further comprising: (d) a second principal light transmission region, disposed at a side of the first light shield region opposite a side thereof at which the first principal light transmission region is disposed, together with the first light shield region and first principal light transmission region corresponding to the circuit pattern; and (e) a third auxiliary light transmission region narrower than the second principal light transmission region and disposed between and bordering on both the first light shield region and the second principal light transmission region, wherein the mask has a second phase-shifting means for substantially reversing a phase of the transmitted exposure light beam transmitted through the third auxiliary light transmission region as compared with a phase of the transmitted exposure light beam transmitted through the second principal light transmission region, so as to make an edge portion of the real image clear on the third auxiliary light transmission region side of the second principal light transmission region, wherein the second phase-shifting means includes a recess in the entire surface of the second principal light transmission region, and wherein a width of the third auxiliary light transmission region is sufficiently narrow so as not to form an independent bright real image thereof on the photoresist film.
Claim 67
Dependent Claim
36 words
An optical mask according to claim 57, wherein the recesses disposed in the first and second principal light transmission regions have a depth substantially minimum to reverse the phase of the transmitted exposure light beam therethrough.
Claim 68
Dependent Claim
34 words
An optical mask according to claim 54, wherein the recess disposed in the first principal light transmission region has a depth substantially minimum to reverse the phase of the transmitted exposure light beam therethrough.
Claim 69
Dependent Claim
19 words
An optical mask according to claim 52, wherein the recess is disposed in the first auxiliary light transmission region.
Claim 70
Dependent Claim
223 words
An optical mask according to claim 60, the circuit pattern further comprising: (d) a second light shield region for shielding the exposure light beam, disposed at a side of the first principal light transmission region opposite a side thereof at which the first light shield region is disposed, together with the first light shield region and the first principal light transmission regions corresponding to the circuit pattern; and (e) a second auxiliary light transmission region narrower than the first principal light transmission region and disposed between and bordering on both the second light shield region and the first principal light transmission region, wherein the mask has a third phase-shifting means for substantially reversing a phase of the transmitted exposure light beam transmitted through the second auxiliary light transmission region as compared with a phase of the transmitted exposure light beam transmitted through the first principal light transmission region, so as to make an edge portion of the real image clear on the second auxiliary light transmission region side of the first principal light transmission region, wherein the third phase-shifting means includes a recess in the entire surface of the second auxiliary light transmission region, and wherein a width of the second auxiliary light transmission region is sufficiently narrow so as not to form an independent bright real image thereof on the photoresist film.
Claim 71
Dependent Claim
35 words
An optical mask according to claim 61, wherein the recesses in the first and second auxiliary light transmission regions have a depth substantially minimum to reverse the phase of the transmitted exposure light beam therethrough.
Claim 72
Dependent Claim
218 words
An optical mask according to claim 60, the circuit pattern further comprising: (d) a second principal light transmission region, disposed at a side of the first light shield region opposite a side thereof at which the first principal light transmission region is disposed, together with the first light shield region and the first principal light transmission region corresponding to the circuit pattern; and (e) a third auxiliary light transmission region narrower than the second principal light transmission region and disposed between and bordering on both the first light shield region and the second principal light transmission region, wherein the mask has a second phase-shifting means for substantially reversing a phase of the transmitted exposure light beam transmitted through the third auxiliary light transmission region as compared with a phase of the transmitted exposure light beam transmitted through the second principal light transmission region, so as to make an edge portion of the real image clear on the third auxiliary light transmission region side of the second principal light transmission region, wherein the second phase-shifting means includes a recess in the entire surface of the third auxiliary light transmission region, and wherein a width of the third auxiliary light transmission region is sufficiently narrow so as not to form an independent bright real image thereof onto the photoresist film.
Claim 73
Dependent Claim
35 words
An optical mask according to claim 63, wherein the recesses in the first and third auxiliary light transmission regions have a depth substantially minimum to reverse the phase of the transmitted exposure light beam therethrough.
Claim 74
Dependent Claim
33 words
An optical mask according to claim 60, wherein the recess in the first auxiliary light transmission region has a depth substantially minimum to reverse the phase of the transmitted exposure light beam therethrough.
Claim 75
Dependent Claim
240 words
An optical mask having a transparent mask substrate with a first major surface and a second major surface, and a circuit pattern on the first major surface of the mask substrate, for exposing the circuit pattern to an exposure light beam having a predetermined wavelength, to form a real image of the circuit pattern on a photoresist film on an integrated circuit wafer on which an integrated circuit is to be formed through an optical projection system, and thereby transfer the circuit pattern of the mask onto the integrated circuit wafer as a pattern of the photoresist film, the circuit pattern comprising: (a) a first principal light transmission region corresponding to the circuit pattern; and (b) a first auxiliary light transmission region narrower than the first principal light transmission region and bordering on the first principal light transmission region, wherein the mask has a phase-shifting means for substantially reversing a phase of the transmitted exposure light beam transmitted through the first auxiliary light transmission region, as compared with a phase of the transmitted exposure light beam transmitted through the first principal light transmission region, so as to make an edge portion of the real image clear on the first auxiliary light transmission region side of the first principal light transmission region, and wherein a width of the first auxiliary light transmission region is sufficiently narrow so as not to form an independent bright real image thereof on the photoresist film.
Claim 76
Dependent Claim
240 words
An optical mask having a transparent mask substrate with a first major surface and a second major surface, and a circuit pattern on the first major surface of the mask substrate, for exposing the circuit pattern to an exposure light beam having a predetermined wavelength, to form a real image of the circuit pattern on a photoresist film on an integrated circuit wafer on which an integrated circuit is to be formed through an optical projection system, and thereby transfer the circuit pattern of the mask onto the integrated circuit wafer as a pattern of the photoresist film, the circuit pattern comprising: (a) a first principal light transmission region corresponding to the circuit pattern; and (b) a first auxiliary light transmission region narrower than the first principal light transmission region and bordering on the first principal light transmission region, wherein the mask has a phase-shifting means for substantially reversing a phase of the transmitted exposure light beam transmitted through the first auxiliary light transmission region, as compared with a phase of the transmitted exposure light beam transmitted through the first principal light transmission region, so as to make an edge portion of the real image clear on the first auxiliary light transmission region side of the first principal light transmission region, and wherein a width of the first auxiliary light transmission region is sufficiently narrow so as not to form an independent bright real image thereof on the photoresist film.
Claim 77
Dependent Claim
35 words
An optical mask according to claim 66, wherein the phase-shifting means includes a transparent film on an entire surface of one of the first principal light transmission region and the first auxiliary light transmission region.
Claim 78
Dependent Claim
23 words
An optical mask according to claim 67, wherein the transparent film is formed directly on the first major surface of the mask substrate.
Claim 79
Dependent Claim
45 words
An optical mask according to claim 68, wherein the first major surface of the mask substrate is exposed over the entire surface of the other of the first principal light transmission region and the first auxiliary light transmission region, not having the transparent film thereon.
Claim 80
Dependent Claim
20 words
An optical mask according to claim 67, wherein the transparent film is disposed on the first principal light transmission region.
Claim 81
Dependent Claim
33 words
An optical mask according to claim 70, wherein the transparent film is made of a material selected from the group consisting of indium oxide, silicon dioxide, silicon nitride, magnesium fluoride, and polymethyl methacrylate.
Claim 82
Dependent Claim
27 words
An optical mask according to claim 71, wherein the transparent film has a thickness substantially minimum to reverse the phase of the transmitted exposure light beam therethrough.
Claim 83
Dependent Claim
20 words
An optical mask according to claim 67, wherein the transparent film is disposed on the first auxiliary light transmission region.
Claim 84
Dependent Claim
33 words
An optical mask according to claim 73, wherein the transparent film is made of a material selected from the group consisting of indium oxide, silicon dioxide, silicon nitride, magnesium fluoride, and polymethyl methacrylate.
Claim 85
Dependent Claim
27 words
An optical mask according to claim 74, wherein the transparent film has a thickness substantially minimum to reverse the phase of the transmitted exposure light beam therethrough.
Claim 86
Dependent Claim
77 words
An optical mask according to claim 66, wherein the phase-shifting means includes a recess in an entire surface of one of the first principal light transmission region and the first auxiliary light transmission region, a bottom surface of the recess being recessed from a top surface of the other of the first principal light transmission region and the first auxiliary light transmission region, not having the recess therein, toward the second major surface of the mask substrate.
Claim 87
Dependent Claim
22 words
An optical mask according to claim 76, wherein the recess is formed directly in the first major surface of the mask substrate.
Claim 88
Dependent Claim
19 words
An optical mask according to claim 76, wherein the recess is disposed in the first principal light transmission region.
Claim 89
Dependent Claim
26 words
An optical mask according to claim 78, wherein the recess has a depth substantially minimum to reverse the phase of the transmitted exposure light beam therethrough.
Claim 90
Dependent Claim
19 words
An optical mask according to claim 76, wherein the recess is disposed in the first auxiliary light transmission region.
Claim 91
Dependent Claim
26 words
An optical mask according to claim 80, wherein the recess has a depth substantially minimum to reverse the phase of the transmitted exposure light beam therethrough.
Claim 92
Dependent Claim
251 words
An optical mask having a circuit pattern substantially on a mask pattern plane, for exposing the circuit pattern to an exposure light beam having a predetermined wavelength, to form a real image of the circuit pattern on a photoresist film on an integrated circuit wafer on which an integrated circuit is to be formed through an optical projection system, and thereby transfer the circuit pattern on the mask pattern plane onto the integrated circuit wafer as a pattern of the photoresist film, the circuit pattern comprising: (a) a first light shield region for shielding the exposure light beam; (b) a first principal light transmission region, together with the light shield region corresponding to the circuit pattern; and (c) a first auxiliary light transmission region narrower than the first principal light transmission region and disposed between and bordering on both the first light shield region and the first principal light transmission region, the mask including means such that a phase of the transmitted exposure light beam transmitted through the first auxiliary light transmission region is substantially reversed as compared with a phase of the transmitted exposure light beam transmitted through the first principal light transmission region, so as to make an edge portion of the real image clear on the first auxiliary light transmission region side of the first principal light transmission region, and wherein a width of the first auxiliary light transmission region is sufficiently narrow so as not to form an independent bright real image thereof on the photoresist film.
Claim 93
Dependent Claim
251 words
An optical mask having a circuit pattern substantially on a mask pattern plane, for exposing the circuit pattern to an exposure light beam having a predetermined wavelength, to form a real image of the circuit pattern on a photoresist film on an integrated circuit wafer on which an integrated circuit is to be formed through an optical projection system, and thereby transfer the circuit pattern on the mask pattern plane onto the integrated circuit wafer as a pattern of the photoresist film, the circuit pattern comprising: (a) a first light shield region for shielding the exposure light beam; (b) a first principal light transmission region, together with the light shield region corresponding to the circuit pattern; and (c) a first auxiliary light transmission region narrower than the first principal light transmission region and disposed between and bordering on both the first light shield region and the first principal light transmission region, the mask including means such that a phase of the transmitted exposure light beam transmitted through the first auxiliary light transmission region is substantially reversed as compared with a phase of the transmitted exposure light beam transmitted through the first principal light transmission region, so as to make an edge portion of the real image clear on the first auxiliary light transmission region side of the first principal light transmission region, and wherein a width of the first auxiliary light transmission region is sufficiently narrow so as not to form an independent bright real image thereof on the photoresist film.
Claim 94
Dependent Claim
34 words
An optical mask according to claim 82, wherein said means is a transparent film on the entire surface of one of the first principal light transmission region and the first auxiliary light transmission region.
Claim 95
Dependent Claim
20 words
An optical mask according to claim 83, wherein the transparent film is disposed on the first auxiliary light transmission region.
Claim 96
Dependent Claim
221 words
An optical mask according to claim 84, the circuit pattern further comprising: (d) a second light shield region for shielding the exposure light beam, disposed at a side of the first principal light transmission region opposite a side thereof on which the first light shield region is disposed, together with the first light shield region and first principal light transmission region corresponding to the circuit pattern; and (e) a second auxiliary light transmission region narrower than the first principal light transmission region and disposed between and bordering on both the second light shield region and the first principal light transmission region, the mask including another means such that a phase of the transmitted exposure light beam transmitted through the second auxiliary light transmission region is substantially reversed as compared with the phase of the transmitted exposure light beam transmitted through the first principal light transmission region, so as to make an edge portion of the real image clear on the second auxiliary light transmission region side of the first principal light transmission region, wherein the another means is a transparent film on the entire surface of the second auxiliary light transmission region, and wherein a width of the second auxiliary light transmission region is sufficiently narrow so as not to form an independent bright real image thereof on the photoresist film.
Claim 97
Dependent Claim
33 words
An optical mask according to claim 85, wherein the transparent films are made of a material selected from the group consisting of indium oxide, silicon dioxide, silicon nitride, magnesium fluoride, and polymethyl methacrylate.
Claim 98
Dependent Claim
27 words
An optical mask according to claim 85, wherein the transparent films have a thickness substantially minimum to reverse the phase of the transmitted exposure light beam therethrough.
Claim 99
Dependent Claim
221 words
An optical mask according to claim 84, the circuit pattern further comprising: (d) a second principal light transmission region, disposed at a side of the first light shield region opposite a side thereof at which the first principal light transmission region is disposed, together with the first light shield region and the first principal light transmission region corresponding to the circuit pattern; and (e) a third auxiliary light transmission region narrower than the second principal light transmission region and disposed between and bordering on both the first light shield region and the second principal light transmission region, the mask further including another means such that a phase of the transmitted exposure light beam transmitted through the third auxiliary light transmission region is substantially reversed as compared with a phase of the transmitted exposure light beam transmitted through the second principal light transmission region, so as to make an edge portion of the real image clear on the third auxiliary light transmission region side of the second principal light transmission region, wherein a transparent film is disposed on an entire surface of the third auxiliary light transmission region, to provide said another means, and wherein a width of the third auxiliary light transmission region is sufficiently narrow so as not to form an independent bright real image thereof onto the photoresist film.
Claim 100
Dependent Claim
42 words
An optical mask according to claim 88, wherein the transparent films on the first and third auxiliary light transmission regions are made of a material selected from the group consisting of indium oxide, silicon dioxide, silicon nitride, magnesium fluoride, and polymethyl methacrylate.
Claim 101
Dependent Claim
36 words
An optical mask according to claim 88, wherein the transparent films on the first and third auxiliary light transmission regions have a thickness substantially minimum to reverse the phase of the transmitted exposure light beam therethrough.
Claim 102
Dependent Claim
33 words
An optical mask according to claim 83, wherein the transparent film is made of a material selected from the group consisting of indium oxide, silicon dioxide, silicon nitride, magnesium fluoride, and polymethyl methacrylate.
Claim 103
Dependent Claim
27 words
An optical mask according to claim 91, wherein the transparent film has a thickness substantially minimum to reverse the phase of the transmitted exposure light beam therethrough.
Claim 104
Dependent Claim
54 words
An optical mask according to claim 85, wherein the first and second light shield regions constitute a single light shield region surrounding the first principal light transmission region, and the first and second auxiliary light transmission regions constitute a single loop-shaped region extending along an entire inner contour of the single light shield region.
Claim 105
Dependent Claim
42 words
An optical mask according to claim 93, wherein the transparent films on the first and second auxiliary light transmission regions are made of a material selected from the group consisting of indium oxide, silicon dioxide, silicon nitride, magnesium fluoride, and polymethyl methacrylate.
Claim 106
Dependent Claim
36 words
An optical mask according to claim 93, wherein the transparent films on the first and second auxiliary light transmission regions have a thickness substantially minimum to reverse the phase of the transmitted exposure light beam therethrough.
Claim 107
Dependent Claim
55 words
An optical mask according to claim 88, wherein the first and second principal light transmission regions constitute a single principal light transmission region surrounding the first light shield region, and the first and third auxiliary light transmission regions constitute a single loop-shaped region extending along an entire outer contour of the first light shield region.
Claim 108
Dependent Claim
42 words
An optical mask according to claim 96, wherein the transparent films on the first and third auxiliary light transmission regions are made of a material selected from the group consisting of indium oxide, silicon dioxide, silicon nitride, magnesium fluoride, and polymethyl methacrylate.
Claim 109
Dependent Claim
36 words
An optical mask according to claim 97, wherein the transparent films on the first and third auxiliary light transmission regions have a thickness substantially minimum to reverse the phase of the transmitted exposure light beam therethrough.
Claim 110
Dependent Claim
36 words
An optical mask according to claim 96, wherein the transparent films on the first and third auxiliary light transmission regions have a thickness substantially minimum to reverse the phase of the transmitted exposure light beam therethrough.
Claim 111
Dependent Claim
222 words
An optical mask having a circuit pattern substantially on a mask pattern plane, for exposing the circuit pattern to an exposure light beam having a predetermined wavelength, to form a real image of the circuit pattern on a photoresist film on an integrated circuit wafer on which an integrated circuit is to be formed through an optical projection system, and thereby transfer the circuit pattern on the mask pattern plane onto the integrated circuit wafer as a pattern of the photoresist film, the circuit pattern comprising: (a) a first principal light transmission region corresponding to the circuit pattern; and (b) a first auxiliary light transmission region narrower than the first principal light transmission region and bordering on the first principal light transmission region, the mask including means such that a phase of the transmitted exposure light beam transmitted through the first auxiliary light transmission region is substantially reversed as compared with a phase of the transmitted exposure light beam transmitted through the first principal light transmission region, so as to make an edge portion of the real image clear on the first auxiliary light transmission region side of the first principal light transmission region, wherein a width of the first auxiliary light transmission region is sufficiently narrow so as not to form an independent bright real image thereof on the photoresist film.
Claim 112
Dependent Claim
222 words
An optical mask having a circuit pattern substantially on a mask pattern plane, for exposing the circuit pattern to an exposure light beam having a predetermined wavelength, to form a real image of the circuit pattern on a photoresist film on an integrated circuit wafer on which an integrated circuit is to be formed through an optical projection system, and thereby transfer the circuit pattern on the mask pattern plane onto the integrated circuit wafer as a pattern of the photoresist film, the circuit pattern comprising: (a) a first principal light transmission region corresponding to the circuit pattern; and (b) a first auxiliary light transmission region narrower than the first principal light transmission region and bordering on the first principal light transmission region, the mask including means such that a phase of the transmitted exposure light beam transmitted through the first auxiliary light transmission region is substantially reversed as compared with a phase of the transmitted exposure light beam transmitted through the first principal light transmission region, so as to make an edge portion of the real image clear on the first auxiliary light transmission region side of the first principal light transmission region, wherein a width of the first auxiliary light transmission region is sufficiently narrow so as not to form an independent bright real image thereof on the photoresist film.
Claim 113
Dependent Claim
34 words
An optical mask according to claim 100, wherein said means is a transparent film on an entire surface of one of the first principal light transmission region and the first auxiliary light transmission region.
Claim 114
Dependent Claim
20 words
An optical mask according to claim 101, wherein the transparent film is disposed on the first auxiliary light transmission region.
Claim 115
Dependent Claim
33 words
An optical mask according to claim 102, wherein the transparent film is made of a material selected from the group consisting of indium oxide, silicon dioxide, silicon nitride, magnesium fluoride, and polymethyl methacrylate.
Claim 116
Dependent Claim
28 words
An optical mask according to claim 103, wherein the transparent film has a thickness substantially minimum to relatively reverse the phase of the transmitted exposure light beam therethrough.
Claim 117
Dependent Claim
28 words
An optical mask according to claim 102, wherein the transparent film has a thickness substantially minimum to relatively reverse the phase of the transmitted exposure light beam therethrough.
Claim 118
Dependent Claim
204 words
A semiconductor device reduction projection exposure method for transferring an enlarged pattern, on a major surface of a transparent substrate of a mask, onto a semiconductor wafer, the method comprising: exposing the mask to an exposure light beam of a predetermined wavelength, the mask having a transmission region on the major surface substantially transparent with respect to the exposure light beam, the transmission region having a first transmission region and a second transmission region for substantially reversing the phase of a transmitted light, without substantially attenuating the amplitude of the transmitted light, relative to the first transmission region and adjacent to the first transmission region so as to substantially border thereon to the extent such that destructive interference between light beams from both vicinity sides of a boundary between the second transmission region and the first transmission region sufficiently takes place, whereby resolution is improved due to the destructive interference between light beams from both vicinity sides of the boundary between the second transmission region and the first transmission region; and forming a reduced clear real image of the enlarged pattern, on the mask, onto a light sensitive resist film on the semiconductor wafer by a predetermined demagnification through an optical reduction projection system.
Claim 119
Dependent Claim
204 words
A semiconductor device reduction projection exposure method for transferring an enlarged pattern, on a major surface of a transparent substrate of a mask, onto a semiconductor wafer, the method comprising: exposing the mask to an exposure light beam of a predetermined wavelength, the mask having a transmission region on the major surface substantially transparent with respect to the exposure light beam, the transmission region having a first transmission region and a second transmission region for substantially reversing the phase of a transmitted light, without substantially attenuating the amplitude of the transmitted light, relative to the first transmission region and adjacent to the first transmission region so as to substantially border thereon to the extent such that destructive interference between light beams from both vicinity sides of a boundary between the second transmission region and the first transmission region sufficiently takes place, whereby resolution is improved due to the destructive interference between light beams from both vicinity sides of the boundary between the second transmission region and the first transmission region; and forming a reduced clear real image of the enlarged pattern, on the mask, onto a light sensitive resist film on the semiconductor wafer by a predetermined demagnification through an optical reduction projection system.
Claim 120
Dependent Claim
17 words
A semiconductor device reduction projection exposure method according to claim 106, wherein the demagnification is substantially 1/5.
Claim 121
Dependent Claim
23 words
A semiconductor device reduction projection exposure method according to claim 107, wherein the exposure light beam is an i-line of a Hg lamp.
Claim 122
Dependent Claim
21 words
A semiconductor device reduction projection exposure method according to claim 106, wherein the exposure light beam is an ultraviolet light beam.
Claim 123
Dependent Claim
39 words
A semiconductor device reduction projection exposure method according to claim 106, wherein the phase of the transmitted light is substantially reversed by a transparent film, having a predetermined thickness, disposed on an entire surface of the second transmission region.
Claim 124
Dependent Claim
33 words
A semiconductor device reduction projection exposure method according to claim 106, wherein a width of the second transmission region is sufficiently narrow so as not to form an independent bright image corresponding thereto.
Claim 125
Dependent Claim
39 words
A semiconductor device reduction projection exposure method according to claim 111, wherein the phase of the transmitted light is substantially reversed by a transparent film, having a predetermined thickness, disposed on an entire surface of the second transmission region.
Claim 126
Dependent Claim
21 words
A semiconductor device reduction projection exposure method according to claim 107, wherein the exposure light beam is an ultraviolet light beam.
Claim 127
Dependent Claim
33 words
A semiconductor device reduction projection exposure method according to claim 113, wherein a width of the second transmission region is sufficiently narrow so as not to form an independent bright image corresponding thereto.
Claim 128
Dependent Claim
39 words
A semiconductor device reduction projection exposure method according to claim 114, wherein the phase of the transmitted light is substantially reversed by a transparent film, having a predetermined thickness, disposed on an entire surface of the second transmission region.
Claim 129
Dependent Claim
39 words
A semiconductor device reduction projection exposure method according to claim 107, wherein the phase of the transmitted light is substantially reversed by a transparent film, having a predetermined thickness, disposed on an entire surface of the second transmission region.
Claim 130
Dependent Claim
34 words
A semiconductor device reduction projection exposure method according to claim 116, wherein a width of the second light transmission region is sufficiently narrow so as not to form an independent bright image corresponding thereto.
Claim 131
Dependent Claim
23 words
A semiconductor device reduction projection exposure method according to claim 106, wherein the exposure light beam is an i-line of a Hg lamp.
References Cited (Backward Citations)
SU197708A1
Cited
US3842202A
Cited
SU570005A1
Cited
US4037918A
Cited
US4195909A
Cited
US4360586A
Cited
JPS576849A
Cited
JPS5754939A
Cited
JPS5762052A
Cited
EP0090924A2
Cited
JPS59168445A
Cited
SU1151904A1
Cited
US4883359A
Cited
JPS61290306A
Cited
JPS61292643A
Cited
JPS6267547A
Cited
JPS6292438A
Cited
JPS62189468A
Cited
JPS62261004A
Cited
US4779001A
Cited
US5045419A
Cited
US4814244A
Cited
US4890309A
Cited
JPS63295350A
Cited
JPH01147458A
Cited
JPH01257226A
Cited
JPH01283925A
Cited
US5045417A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1997-10-24 | 1998-04-25 | 1998-10-25 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2001-10-24 | 2002-04-25 | 2002-10-25 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2005-10-24 | 2006-04-25 | 2006-10-25 | $7700.00 | Window Closed / Lapsed |