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US5357134A Expired / Lapsed US ⏱️ 0.0 years remaining

Nonvolatile semiconductor device having charge trap film containing silicon crystal grains

Assignee: Rohm Co Ltd
•
Filing: 1994-02-23
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Granted: 1994-10-18
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Expires: 2014-02-23
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Abstract

Abstract A tunnel oxide film 12 is formed on a silicon substrate 11 and a polysilicon film 16 is deposited thereon. Then, an impurity such as phosphorus or the like is doped into the polysilicon film 16 and the polysilicon film 16 is subjected to thermal oxidation. As a result, a charge trap film 15 in which silicon grains 13 in the inside of the polysilicon film 16 are coated with a thermal oxide film 14 is obtained. If necessary, a multilayer charge trap film 15 is obtained by repetition of the foregoing steps. Since the thermal oxide film 14 has an excellent insulating property compared with an oxide film obtained by a sputtering or CVD method and therefore the charge trap film 15 has a high dielectric withstanding voltage. Further, since the silicon grains 13 coated with the thermal oxide film 14 have a deep trap level, an improved signal charge holding property can be obtained. Thereby, it is provided a nonvolatile semiconductor storage device comprising a charge trap film having a deep trap level and an improved dielectric withstanding voltage.

Inventors

  • 👤 Noriyuki Shimoji

Bibliographic Details

Application Number —
Jurisdiction US
Data Source google_patents
Last Synchronized 2026-11-01 18:46
CPC Classifications
B; B82; B82Y; B82Y10/00; H; H10; H10D; H10D30/00; H10D30/60; H10D30/68; H10D30/681; H10D30/683

Claims Analysis

Total Claims: 8
Claim 1
Independent Claim 93 words
A nonvolatile semiconductor storage device comprising: a gate structure in which an insulating film, a charge trap film, and a conductive film are stacked on a substrate; and drain and source diffusion layers formed in said substrate at opposite sides of said gate structure, whereby a charge is held in said charge trap film to thereby store information, wherein said charge trap film includes a polysilicon film having a plurality of silicon crystal grains, each grain being coated with a thermal insulating film so as to isolate the crystal grains from each other.
Claim 2
Dependent Claim 93 words
A nonvolatile semiconductor storage device comprising: a gate structure in which an insulating film, a charge trap film, and a conductive film are stacked on a substrate; and drain and source diffusion layers formed in said substrate at opposite sides of said gate structure, whereby a charge is held in said charge trap film to thereby store information, wherein said charge trap film includes a polysilicon film having a plurality of silicon crystal grains, each grain being coated with a thermal insulating film so as to isolate the crystal grains from each other.
Claim 3
Dependent Claim 29 words
A nonvolatile semiconductor storage device as claimed in claim 1, wherein said thermal insulating film is one of a thermal silicon oxide film and a thermal silicon nitride film.
Claim 4
Dependent Claim 47 words
A charge trap film formed on a semiconductor substrate, said charge trap film comprising a plurality of silicon crystal grains in a polysilicon film, each of said silicon crystal grains being coated with a thermal insulating film so as to isolate the crystal grains from each other.
Claim 5
Dependent Claim 47 words
A charge trap film formed on a semiconductor substrate, said charge trap film comprising a plurality of silicon crystal grains in a polysilicon film, each of said silicon crystal grains being coated with a thermal insulating film so as to isolate the crystal grains from each other.
Claim 6
Dependent Claim 28 words
A charge trap film as claimed in claim 3, wherein said thermal insulating film is one of a thermal silicon oxide film and a thermal silicon nitride film.
Claim 7
Dependent Claim 19 words
A nonvolatile semiconductor storage device as claimed in claim 1, wherein the charge trap film comprises a multilayer film.
Claim 8
Dependent Claim 18 words
A charge trap film as claimed in claim 3, wherein the charge trap film comprises a multilayer film.

References Cited (Backward Citations)

US3878549A Cited
US4162176A Cited
US4282540A Cited
US4735919A Cited
US5031010A Cited

USPTO Annuity & Maintenance Windows

Annuity Stage Window Opens Payment Deadline Surcharge Period Until Estimated Fee Status
3.5 Years (Year 4) 1997-10-17 1998-04-18 1998-10-18 $2000.00 Window Closed / Lapsed
7.5 Years (Year 8) 2001-10-17 2002-04-18 2002-10-18 $3760.00 Window Closed / Lapsed
11.5 Years (Year 12) 2005-10-17 2006-04-18 2006-10-18 $7700.00 Window Closed / Lapsed

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