Reduced temperature suppression of volatilization of photoexcited halogen reaction products from surface of silicon wafer

Claim 2

A process for removing contaminant material from a surface of a substrate without causing said surface of said substrate to become roughened comprising the steps of: (a) placing said substrate in a controlled ambient chamber; (b) introducing a halogen gas into said chamber; (c) while maintaining said substrate at a temperature below a temperature at which halogen-substrate compounds on the surface of said substrate volatilize off said surface of said substrate, photoexciting said halogen gas to produce a halogen reactant that reacts with contaminant material on the surface of said substrate to produce halogen-contaminant compounds; and (d) removing halogen-substrate compounds that have been formed in step (c) from the surface of said substrate.

Claim 3

A method according to claim 1, wherein step (c) comprises placing said substrate in contact with a heat sink that effectively maintains the temperature of said substrate below said temperature at which halogen-substrate compounds volatilize off said surface of said substrate in the presence of photoexcitation of said halogen.

Claim 4

A method according to claim 1, wherein step (c) comprises maintaining the pressure of said chamber at a pressure above atmospheric pressure and irradiating said halogen gas with ultraviolet light, thereby photoexciting said halogen gas to produce a halogen reactant that reacts with contaminant material on the surface of said substrate to produce halogen-contaminant compounds, while maintaining said substrate in contact with a heat sink at a temperature below said temperature at which halogen-substrate compounds volatilize off the surface of said substrate.

Claim 5

A method according to claim 3, wherein said substrate comprises a silicon substrate and said halogen comprises chorine.

Claim 6

A method according to claim 3, wherein step (d) comprises increasing the temperature of said substrate upon said surface of which halogen-contaminant compounds have been formed, so as to volatilize said halogen-contaminant compounds off said surface of said substrate.

Claim 7

A method according to claim 5, wherein step (d) comprises placing said substrate in a reduced pressure atmosphere and increasing the temperature of said substrate upon said surface of which halogen-contaminant compounds have been formed, so as to volatilize said halogen-contaminant compounds off said surface of said substrate.

Claim 8

A method according to claim 3, wherein step (d) comprises exposing said substrate to a bath in which said halogen-contaminant compounds are soluble, so as to rinse said halogen-contaminant compounds off said surface of said substrate.

Claim 9

A method according to claim 3, wherein step (c) includes modulating the irradiation of the halogen gas and thereby modulating the irradiation of the surface of said silicon substrate, so as to controllably adjust the amount of radiation absorbed by said substrate and thereby maintain the temperature of the substrate below said temperature at which halogen-substrate compounds volatilize off said surface of said substrate.

Claim 10

A method according to claim 8, wherein step (c) includes controllably operating an optical shutter disposed between an ultraviolet light source and said substrate in order to modulate the amount of ultraviolet radiation incident upon said substrate.

Claim 11

A method according to claim 8, wherein step (c) includes controllably modulating an ultraviolet light source.

Claim 12

A process for removing contaminant material from a surface of a silicon substrate, without substantially etching the surface of said silicon substrate into a roughened condition, comprising the steps of: (a) placing said silicon substrate in a controlled ambient chamber; (b) introducing a halogen gas into said chamber at a pressure in excess of one atmosphere; (c) while contacting said silicon substrate with a cooling medium that maintains said silicon substrate at a temperature below a temperature at which halogen-substrate compounds on the surface of said substrate volatilize off said surface of said substrate, irradiating said halogen gas with ultraviolet light, thereby photoexciting said halogen gas to produce halogen reactant radicals, that react with the surface of said silicon substrate, including contaminant material thereon, and convert the surface of said silicon substrate into a surface film containing halogen-contaminant compounds and halogen-silicon reaction products, but, because of the reduced temperature of said silicon substrate being maintained below said temperature at which halogen-substrate compounds volatilize off the surface of said substrate, volatilization of said surface film does not occur, so that further reaction of said halogen reactant radicals with that portion of said silicon substrate underlying said film is effectively suppressed; and (d) removing said film that contains silicon-halogen and contaminant-halogen reaction products from the surface of said substrate.

Claim 13

A process for removing contaminant material from a surface of a silicon substrate, without substantially etching the surface of said silicon substrate into a roughened condition, comprising the steps of: (a) placing said silicon substrate in a controlled ambient chamber; (b) introducing a halogen gas into said chamber at a pressure in excess of one atmosphere; (c) while contacting said silicon substrate with a cooling medium that maintains said silicon substrate at a temperature below a temperature at which halogen-substrate compounds on the surface of said substrate volatilize off said surface of said substrate, irradiating said halogen gas with ultraviolet light, thereby photoexciting said halogen gas to produce halogen reactant radicals, that react with the surface of said silicon substrate, including contaminant material thereon, and convert the surface of said silicon substrate into a surface film containing halogen-contaminant compounds and halogen-silicon reaction products, but, because of the reduced temperature of said silicon substrate being maintained below said temperature at which halogen-substrate compounds volatilize off the surface of said substrate, volatilization of said surface film does not occur, so that further reaction of said halogen reactant radicals with that portion of said silicon substrate underlying said film is effectively suppressed; and (d) removing said film that contains silicon-halogen and contaminant-halogen reaction products from the surface of said substrate.

Claim 14

A method according to claim 11, wherein said halogen comprises chlorine.

Claim 15

A method according to claim 11, wherein step (d) comprises placing said silicon substrate in a chamber the pressure of which is reduced to less than one atmosphere and increasing the temperature of said substrate upon said surface of which film has been formed, so as to volatilize said halogen-contaminant and halogen-silicon reaction products off said surface of said silicon substrate.

Claim 16

A method according to claim 11, wherein step (d) comprises exposing said silicon substrate to a bath in which said halogen-contaminant and halogen-silicon reaction products are soluble, so as to rinse said film off said surface of said silicon substrate.

Claim 17

A method according to claim 11, wherein step (c) includes modulating the irradiation of the halogen gas and thereby modulating the irradiation of the surface of said silicon substrate, so as to controllably adjust the amount of radiation absorbed by said substrate and thereby maintain the temperature of the substrate below said temperature at which halogen-substrate compounds volatilize off said surface of said substrate.

Claim 18

A method according to claim 15, wherein step (c) includes controllably operating an optical shutter disposed between an ultraviolet light source and said substrate in order to modulate the amount of ultraviolet radiation incident upon said substrate.

Claim 19

A method according to claim 15, wherein step (c) includes controllably modulating an ultraviolet light source.

Claim 20

A process for removing contaminant material from a surface of a silicon substrate, without substantially etching the surface of said silicon substrate into a roughened condition, comprising the steps of: (a) placing said silicon substrate in a controlled ambient chamber; (b) introducing a halogen gas into said chamber; (c) while contacting said silicon substrate with a cooling medium that maintains said silicon substrate at a temperature below a temperature at which halogen-substrate compounds on the surface of said substrate volatilize off said surface of said substrate, forming a buffer layer on the surface of said substrate, said buffer layer containing halogen-substrate compounds including halogen-contaminant compounds, said buffer layer preventing further halogen reactants in said chamber from coming in contact with said reacting with said substrate, by irradiating said halogen gas with ultraviolet light, thereby photoexciting said halogen gas to produce reactant radicals, which reactant radicals react with the surface of said silicon substrate, including contaminant material thereon and convert the surface of said silicon substrate into said buffer layer containing halogen-contaminant compounds and halogen-silicon reaction products, but, because of the temperature of said silicon substrate being maintained below said temperature at which halogen-substrate compounds volatilize off the surface of said silicon substrate, volatilization of said buffer layer does not occur, so that further reaction of said halogen reactant radicals with that portion of said silicon substrate underlying said buffer layer is effectively suppressed; and (d) removing said buffer layer that contains silicon-halogen and contaminant-halogen reaction products from the surface of said silicon substrate.

Claim 21

A process for removing contaminant material from a surface of a silicon substrate, without substantially etching the surface of said silicon substrate into a roughened condition, comprising the steps of: (a) placing said silicon substrate in a controlled ambient chamber; (b) introducing a halogen gas into said chamber; (c) while contacting said silicon substrate with a cooling medium that maintains said silicon substrate at a temperature below a temperature at which halogen-substrate compounds on the surface of said substrate volatilize off said surface of said substrate, forming a buffer layer on the surface of said substrate, said buffer layer containing halogen-substrate compounds including halogen-contaminant compounds, said buffer layer preventing further halogen reactants in said chamber from coming in contact with said reacting with said substrate, by irradiating said halogen gas with ultraviolet light, thereby photoexciting said halogen gas to produce reactant radicals, which reactant radicals react with the surface of said silicon substrate, including contaminant material thereon and convert the surface of said silicon substrate into said buffer layer containing halogen-contaminant compounds and halogen-silicon reaction products, but, because of the temperature of said silicon substrate being maintained below said temperature at which halogen-substrate compounds volatilize off the surface of said silicon substrate, volatilization of said buffer layer does not occur, so that further reaction of said halogen reactant radicals with that portion of said silicon substrate underlying said buffer layer is effectively suppressed; and (d) removing said buffer layer that contains silicon-halogen and contaminant-halogen reaction products from the surface of said silicon substrate.

Claim 22

A method according to claim 18 wherein step (c) includes modulating the irradiation of the halogen gas and thereby modulating the irradiation of the surface of said silicon substrate, so as to controllably adjust the amount of radiation absorbed by said substrate and thereby maintain the temperature of the substrate below said temperature at which halogen-substrate compounds volatilize off said surface of said substrate.

Claim 23

A method according to claim 18, wherein step (d) comprises placing said silicon substrate in a chamber the pressure of which is reduced to less than one atmosphere and increasing the temperature of said substrate upon said surface of which film has been formed, so as to volatilize said halogen-contaminant and halogen-silicon reaction products off said surface of said silicon substrate.