US5349596A
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US
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Asymmetrical semiconductor heterostructure laser cavity and laser equipped with said cavity
Assignee: Commissariat à l'Énergie Atomique et Aux Énergies Alternatives
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Filing: 1993-04-16
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Granted: 1994-09-20
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Expires: 2013-04-16
Abstract
Abstract A semiconductor heterostructure laser cavity is disclosed which has semiconductor layers epitaxied to define four zones on a substrate. The laser cavity includes a first zone with a composition that varies continuously from a first face to a second face with a gap decreasing from the first face to the second face, the first zone ensuring an optical confinement and light guidance. A second zone constitutes an active emission zone in contact with the second face of the first zone and having at least one quantum well with a gap smaller than that of the first zone. A third zone has a gap larger than that of the at least one quantum well. The third zone ensuring an optical confinement and a light guidance, and having a composition which varies continuously from a first face to a second face with a gap which increases from the first face to the second face, the first face of the third zone being in contact with the active emission zone. A fourth zone constitutes a buffer zone which contacts the second face of the third zone and a substrate, the fourth zone serving as an optical barrier for light guiding, the first and third zones being asymmetrical with respect to the active emission zone to define an asymmetrical GRINSCH structure, one of the first and third zones constituting a surface of the semiconductor heterostructure for ensuring electron excitation and creation of electron-holes.
Inventors
- 👤 Engin Molva
- 👤 Roger Accomo
- 👤 Guy Feuillet
- 👤 Joel Cibert
- 👤 Dang Le Si
- 👤 Claire Bodin-Deshayes
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-03 18:48
CPC Classifications
H; H01; H01S; H01S5/00; H01S5/02; B; B82; B82Y; B82Y20/00; H01S5/04; H01S5/30; H01S5/34; H01S3/00; H01S3/09; H01S3/0955; H01S3/0959; H01S5/022; H01S5/0235; H01S5/02355; H01S5/0237; H01S5/024; H01S5/02461; H01S5/041; H01S5/32; H01S5/3211; H01S5/3213; H01S5/3409; H01S5/3426; H01S5/343; H01S5/34313; H01S5/3432; H01S5/347
Claims Analysis
Total Claims: 22
Claim 1
Independent Claim
237 words
Semiconductor heterostructure laser cavity having semiconductor layers epitaxied to define four zones on a substrate, said laser cavity comprising: a first zone with a composition that varies continuously from a first face a second face with a gap decreasing from the first face to the second face, said first zone ensuring an optical confinement and light guidance; a second zone constituting an active emission zone in contact with the second face of the first zone and having at least one quantum well with a gap smaller than that of the first zone; a third zone having a gap larger than that of the at least one quantum well, said third zone ensuring an optical confinement and a light guidance, and having a composition which varies continuously from a first face to a second face with a gap which increases from the first face to the second face, the first face of the third zone being in contact with the active emission zone; and a fourth zone constituting a buffer zone which contacts the second face of the third zone and the substrate, said fourth zone serving as an optical barrier for light guiding, the first and third zones being asymmetrical with respect to the active emission zone to define an asymmetrical GRINSCH structure, one of the first and third zones constituting a surface of the semiconductor heterostructure and ensuring an electron excitation and creation of electron-hole pairs.
Claim 2
Dependent Claim
237 words
Semiconductor heterostructure laser cavity having semiconductor layers epitaxied to define four zones on a substrate, said laser cavity comprising: a first zone with a composition that varies continuously from a first face a second face with a gap decreasing from the first face to the second face, said first zone ensuring an optical confinement and light guidance; a second zone constituting an active emission zone in contact with the second face of the first zone and having at least one quantum well with a gap smaller than that of the first zone; a third zone having a gap larger than that of the at least one quantum well, said third zone ensuring an optical confinement and a light guidance, and having a composition which varies continuously from a first face to a second face with a gap which increases from the first face to the second face, the first face of the third zone being in contact with the active emission zone; and a fourth zone constituting a buffer zone which contacts the second face of the third zone and the substrate, said fourth zone serving as an optical barrier for light guiding, the first and third zones being asymmetrical with respect to the active emission zone to define an asymmetrical GRINSCH structure, one of the first and third zones constituting a surface of the semiconductor heterostructure and ensuring an electron excitation and creation of electron-hole pairs.
Claim 3
Dependent Claim
34 words
Laser cavity according to claim 1, wherein the fourth zone includes: a buffer layer serving as an optical barrier in contact with the second zone; and an adapting layer in contact with the substrate.
Claim 4
Dependent Claim
23 words
Laser cavity according to claim 1, wherein the fourth zone has a superlattice structure incorporating an alternation of quantum wells and quantum barriers.
Claim 5
Dependent Claim
20 words
Laser cavity according to claim 1, wherein the first zone has a thickness greater than that of the third zone.
Claim 6
Dependent Claim
18 words
Laser cavity according to claim 1, wherein the first zone has a thickness not greater than 1 μm.
Claim 7
Dependent Claim
55 words
Laser cavity according to claim 1, wherein the composition of the first zone at the first face is identical to the composition of the third zone at its second face, and wherein the composition of the first zone at its second face is identical to the composition of the third zone at its first face.
Claim 8
Dependent Claim
31 words
Laser cavity according to claim 6, wherein the active emission zone has at least one quantum barrier with an identical composition to that of the first zone at its second face.
Claim 9
Dependent Claim
23 words
Laser cavity according to claim 1, wherein the semiconductor heterostructure further includes: means for ensuring a ribbon lateral confinement of the electron excitation.
Claim 10
Dependent Claim
35 words
Laser cavity according to claim 1, wherein the first face of the first zone further includes: a metal deposit having a ribbon-shaped opening in a median portion constituting lateral confinement means of the electron excitation.
Claim 11
Dependent Claim
20 words
Laser cavity according to claim 1, wherein the laser cavity further includes: two parallel, cleaved side faces constituting semireflecting mirrors.
Claim 12
Dependent Claim
118 words
Laser cavity according to claim 1, wherein the semiconductor heterostructure is made from at least one semiconductor material chosen from the group consisting of: Cd 1-x Mn x Te, Cd x Hg 1-x Te, Cd x Zn 1-x Te, Cd x Zn z Mn 1-x-z Te, Cd x Zn 1-x Se, ZnS y Se 1-y , CdS y SE 1-y , Cd x Zn 1-x S y Se 1-y , Zn z Mn 1-z Se, Zn z Mg 1-z S y Se 1-y , Ga x Al 1-x As, Ga x Al 1-x N, Pb x Sn 1-x Te, Pb x Eu 1-x Se, Pb x Eu 1-x Se y Te 1-y with 0≦x≦1, 0≦y≦1, 0≦z≦1 and 0≦x+z≦1.
Claim 13
Dependent Claim
23 words
Laser cavity according to claim 1, wherein the semiconductor heterostructure includes: semiconductor layers interdiffused by a heat treatment at 150° to 400° C.
Claim 14
Dependent Claim
247 words
Semiconductor laser having a laser cavity and cavity pumping means, the laser cavity having semiconductor layers epitaxied to define four zones on a substrate, said laser cavity comprising: a first zone with a composition that varies continuously from a first face to a second face with a gap decreasing from the first face to the second face, said first zone ensuring an optical confinement and light guidance; a second zone constituting an active emission zone in contact with the second face of the first zone and having at least one quantum well with a gap smaller than that of the first zone; a third zone having a gap larger than that of the at least one quantum well, said third zone ensuring an optical confinement and a light guidance, and having a composition which varies continuously from a first face to a second face with a gap which increases from the first face to the second face, the first face of the third zone being in contact with the active emission zone; and a fourth zone constituting a buffer zone which contacts the second face of the third zone and said substrate, said fourth zone serving as an optical barrier for light guiding, the first and third zones being asymmetrical with respect to the active emission zone to define an asymmetrical GRINSCH structure, one of the first and third zones constituting a surface of the semiconductor heterostructure and ensuring an electron excitation and creation of electron-hole pairs.
Claim 15
Dependent Claim
247 words
Semiconductor laser having a laser cavity and cavity pumping means, the laser cavity having semiconductor layers epitaxied to define four zones on a substrate, said laser cavity comprising: a first zone with a composition that varies continuously from a first face to a second face with a gap decreasing from the first face to the second face, said first zone ensuring an optical confinement and light guidance; a second zone constituting an active emission zone in contact with the second face of the first zone and having at least one quantum well with a gap smaller than that of the first zone; a third zone having a gap larger than that of the at least one quantum well, said third zone ensuring an optical confinement and a light guidance, and having a composition which varies continuously from a first face to a second face with a gap which increases from the first face to the second face, the first face of the third zone being in contact with the active emission zone; and a fourth zone constituting a buffer zone which contacts the second face of the third zone and said substrate, said fourth zone serving as an optical barrier for light guiding, the first and third zones being asymmetrical with respect to the active emission zone to define an asymmetrical GRINSCH structure, one of the first and third zones constituting a surface of the semiconductor heterostructure and ensuring an electron excitation and creation of electron-hole pairs.
Claim 16
Dependent Claim
14 words
Laser according to claim 13, wherein the cavity pumping means is an electron gun.
Claim 17
Dependent Claim
43 words
Laser according to claim 14, wherein the electron gun further includes: a microdot cold source for emitting an electron beam; a high voltage anode for accelerating the electrons; and an electrode array for ribbon focusing of the electron beam on the laser cavity.
Claim 18
Dependent Claim
23 words
Laser according to claim 13, wherein the laser cavity is mounted on a thermal mass for ensuring temperature control of the laser cavity.
Claim 19
Dependent Claim
42 words
Laser according to claim 13, wherein the laser cavity is mounted on a thermal mass with the epitaxied layers resting on said mass, a local freeing of the substrate and the buffer zone being provided to ensure pumping at the third zone.
Claim 20
Dependent Claim
19 words
Laser according to claim 17, wherein the laser cavity is fixed by welding or bonding to the thermal mass.
Claim 21
Dependent Claim
27 words
Laser according to claim 18, wherein the laser cavity has a surface layer moving the first zone away from the weld or bond on the thermal mass.
Claim 22
Dependent Claim
28 words
Laser according to claim 17, wherein the laser cavity further includes: an etching stop layer made from a semiconductor material between the buffer zone and the third zone.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
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| 3.5 Years (Year 4) | 1997-09-19 | 1998-03-21 | 1998-09-20 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2001-09-19 | 2002-03-21 | 2002-09-20 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2005-09-19 | 2006-03-21 | 2006-09-20 | $7700.00 | Window Closed / Lapsed |