US5202897A
Expired / Lapsed
US
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Fabry-perot modulator
Assignee: IPG Photonics Corp
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Filing: 1991-05-24
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Granted: 1993-04-13
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Expires: 2011-05-24
Abstract
Abstract An asymmetric Fabry Perot (FP) modulator includes a quantum well structure having wider (approximately 150 Å) than usual (about 100 Å) wells. The FP cavity has a resonance at a wavelength of an excitonic absorption peak of the QW structure. Although the maximum change in absorption under applied bias is less with 150 Å wells than with 100 Å wells, the characteristics of the electroabsorption are also altered, with the result that the largest change occurs at the wavelength of the band-edge el-hhl exciton at zero bias. Absorption can be reduced by biasing the QW and hence the AFPM can have a normally-off (zero bias, zero reflectivity) characteristic. Such an arrangement makes possible higher contrast modulation and/or lower operating voltages. The FP modulator may be used in SEEDs.
Inventors
- 👤 Mark Whitehead
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-03 20:28
CPC Classifications
G; G02; G02F; G02F3/00; G02F3/02; G02F3/028; G02F1/00; G02F1/01; G02F1/21; G02F1/218; G02F1/015; G02F1/0155; G02F1/0157; G02F2203/00; G02F2203/02
Claims Analysis
Total Claims: 23
Claim 1
Independent Claim
85 words
A Fabry-Perot modulator comprising a resonant cavity defined by front and back reflective surfaces of different reflectivities and including within the cavity a multiple quantum well structure having a barrier width sufficient to prevent resonant coupling between wells in the structure, wherein absorption of the quantum well structure at a resonant wavelength of the cavity and at a low bias level is greater than with a higher bias level, whereby reflectivity of the Fabry-Perot modulator at that wavelength increases with an increase in bias level.
Claim 2
Dependent Claim
85 words
A Fabry-Perot modulator comprising a resonant cavity defined by front and back reflective surfaces of different reflectivities and including within the cavity a multiple quantum well structure having a barrier width sufficient to prevent resonant coupling between wells in the structure, wherein absorption of the quantum well structure at a resonant wavelength of the cavity and at a low bias level is greater than with a higher bias level, whereby reflectivity of the Fabry-Perot modulator at that wavelength increases with an increase in bias level.
Claim 3
Dependent Claim
25 words
A modulator as claimed in claim 1 wherein substantially each of a plurality of barrier layers in said structure are at least 40 A thick.
Claim 4
Dependent Claim
27 words
A modulator as claimed in claim 1 wherein the multiple quantum well structure comprises a plurality of wells having a width of between 130 and 160 Å.
Claim 5
Dependent Claim
16 words
A modulator as claimed in claim 3, wherein the well width is at least 140 Å.
Claim 6
Dependent Claim
16 words
A modulator as claimed in claim 4, wherein the well width is at least 145 Å.
Claim 7
Dependent Claim
17 words
A modulator as claimed in claim 3, wherein the well width is no more than 155 Å.
Claim 8
Dependent Claim
17 words
A modulator as claimed in claim 6, wherein the well width is no more than 150 Å.
Claim 9
Dependent Claim
24 words
A modulator as claimed in claim 1, wherein the multiple quantum well structure comprises barrier layers having widths of between 40 and 100 Å.
Claim 10
Dependent Claim
17 words
A modulator as claimed in claim 8, wherein the barrier width is no more than 70 Å.
Claim 11
Dependent Claim
17 words
A modulator as claimed in claim 9 wherein the barrier width is between 45 and 65 Å.
Claim 12
Dependent Claim
19 words
A modulator as claimed in claim 1, wherein the multiple quantum well structure comprises GaAs wells and AlGaAs barriers.
Claim 13
Dependent Claim
19 words
A modulator as claimed in claim 1, wherein the multiple quantum well structure comprises no more than 30 wells.
Claim 14
Dependent Claim
15 words
A modulator as claimed in claim 12, wherein there are between 10 and 30 wells.
Claim 15
Dependent Claim
13 words
A self electro-optic device comprising at least one modulator according to claim 1.
Claim 16
Dependent Claim
23 words
A device as claimed in claim 14, wherein a load element of the device is grown on a common substrate with said modulator.
Claim 17
Dependent Claim
20 words
A device as claimed in claim 15, wherein the load element is a diode grown on top of said modulator.
Claim 18
Dependent Claim
15 words
A device as claimed in claim 15, wherein the load element is a second modulator.
Claim 19
Dependent Claim
35 words
A method of modulating light, which method comprises directing an optical input at a lower reflectivity facet of a modulator according to claim 1, and applying a modulating electric signal to electrodes of the modulator.
Claim 20
Dependent Claim
58 words
A Fabry-Perot modulator comprising a resonant cavity defined by front and back reflective surfaces of different reflectivities and including within the cavity a multiple quantum well structure, the quantum well structure having an excitonic peak wherein the wavelength of an excitonic peak of the quantum well structure in an unbiased state coincides with a resonance of the cavity.
Claim 21
Dependent Claim
58 words
A Fabry-Perot modulator comprising a resonant cavity defined by front and back reflective surfaces of different reflectivities and including within the cavity a multiple quantum well structure, the quantum well structure having an excitonic peak wherein the wavelength of an excitonic peak of the quantum well structure in an unbiased state coincides with a resonance of the cavity.
Claim 22
Dependent Claim
108 words
A Fabry-Perot modulator comprising a resonant cavity defined by front and back reflective surfaces of different reflectivities, the cavity including a multiple quantum well structure comprised of well regions separated by barriers, wherein the thickness of the barriers is chosen to prevent resonant coupling between the well regions, and wherein the thickness of the well regions and the thickness of the barriers are chosen whereby absorption of the quantum well structure at a resonant wavelength of the cavity and at a low bias level is greater than with a higher bias level, whereby reflectivity of the Fabry-Perot modulator at that wavelength increases with an increase in bias level.
Claim 23
Dependent Claim
108 words
A Fabry-Perot modulator comprising a resonant cavity defined by front and back reflective surfaces of different reflectivities, the cavity including a multiple quantum well structure comprised of well regions separated by barriers, wherein the thickness of the barriers is chosen to prevent resonant coupling between the well regions, and wherein the thickness of the well regions and the thickness of the barriers are chosen whereby absorption of the quantum well structure at a resonant wavelength of the cavity and at a low bias level is greater than with a higher bias level, whereby reflectivity of the Fabry-Perot modulator at that wavelength increases with an increase in bias level.
References Cited (Backward Citations)
US4546244A
Cited
EP0249645A1
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1996-04-12 | 1996-10-12 | 1997-04-13 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2000-04-12 | 2000-10-12 | 2001-04-13 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2004-04-12 | 2004-10-12 | 2005-04-13 | $7700.00 | Window Closed / Lapsed |