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US5346841A
Expired / Lapsed
US
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Method of manufacturing semiconductor device using ion implantation
Assignee: Renesas Electronics Corp
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Filing: 1993-07-06
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Granted: 1994-09-13
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Expires: 2013-07-06
Abstract
Abstract In a method of manufacturing a semiconductor device, after forming a mask for blocking ion implantation in a predetermined position on the main surface of a silicon substrate, oxygen ions are implanted from the direction making an angle of about 45° with respect to the main surface while intermittently changing the implantation energy and the dose in a suitable manner. This process of oxygen ion implantation is carried out with the silicon substrate being rotated in a plane parallel to the surface. According to the process above, an element isolation film is formed surrounding a portion below an active region in the silicon substrate only by the process of oxygen ion implantation and a heat treatment process after that. As a result, the productivity is increased compared with in the conventional method in which an element isolation film on the side portion of the active region is formed by thermal oxidation, and degradation of the properties of crystal and residual ions in the active regions are also prevented.
Inventors
- 👤 Kotaro Yajima
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-30 12:22
CPC Classifications
H; H10; H10P; H10P30/00; H10P30/20; H10P30/208; H10P30/209; H10P30/22; H10P30/221; H10P30/222; H10P90/00; H10P90/19; H10P90/1904; H10P90/1906; H10W; H10W10/00; H10W10/01; H10W10/061; H10W10/10; H10W10/181; H10P90/1908; H10W10/011; H10W10/012; H10W10/13
Claims Analysis
Total Claims: 4
Claim 1
Independent Claim
209 words
A method of manufacturing a semiconductor device comprising the steps of: preparing a semiconductor substrate formed of single crystal silicon; forming a mask for block ion implantation on the main surface of the semiconductor substrate; and implanting oxygen ions from the direction making an angle of about 45° with respect to the main surface of said semiconductor substrate while intermittently changing values of the implantation energy and the dose to form an insulator layer including oxide silicon surrounding an active region in said semiconductor substrate, increasing the values of the ion implantation energy being accompanied with increasing the values of the dose, the values of the implantation energy and the dose being selected so as to fully enclose said active region with said insulator layer, wherein said step of the irradiation of the oxygen ions is carried out with said semiconductor substrate being rotated in a plane parallel to the main surface, and said step of forming the mask includes the steps of depositing a silicon oxide film on the main surface on said semiconductor substrate, selectively removing this silicon oxide film to form a patterned silicon oxide film, and then further covering the surface and side surface of the patterned silicon oxide film with a silicon nitride film.
Claim 2
Independent Claim
209 words
A method of manufacturing a semiconductor device comprising the steps of: preparing a semiconductor substrate formed of single crystal silicon; forming a mask for block ion implantation on the main surface of the semiconductor substrate; and implanting oxygen ions from the direction making an angle of about 45° with respect to the main surface of said semiconductor substrate while intermittently changing values of the implantation energy and the dose to form an insulator layer including oxide silicon surrounding an active region in said semiconductor substrate, increasing the values of the ion implantation energy being accompanied with increasing the values of the dose, the values of the implantation energy and the dose being selected so as to fully enclose said active region with said insulator layer, wherein said step of the irradiation of the oxygen ions is carried out with said semiconductor substrate being rotated in a plane parallel to the main surface, and said step of forming the mask includes the steps of depositing a silicon oxide film on the main surface on said semiconductor substrate, selectively removing this silicon oxide film to form a patterned silicon oxide film, and then further covering the surface and side surface of the patterned silicon oxide film with a silicon nitride film.
Claim 3
Dependent Claim
36 words
The method of manufacturing the semiconductor device according to claim 1, after formation of said insulator layer, further comprising a step of forming a MOS field-effect transistor in the active region surrounded by said insulator layer.
Claim 4
Dependent Claim
90 words
The method of manufacturing the semiconductor device according to claim 2, wherein the step of forming said MOS field-effect transistor includes the steps of forming a gate insulating film on the surface of the active region surrounded by said insulator layer by a thermal oxidation method, forming a polysilicon layer on the gate insulating film, patterning the polysilicon layer to form a gate electrode, and implanting impurities having a conductivity type opposite to that of said semiconductor substrate using the gate electrode as a mask to form a source/drain region.
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| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
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| 3.5 Years (Year 4) | 1997-09-12 | 1998-03-14 | 1998-09-13 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2001-09-12 | 2002-03-14 | 2002-09-13 | $3760.00 | Window Closed / Lapsed |
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