US5346730A
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Process for depositing a copper containing layer I
Assignee: Kali Chemie AG
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Filing: 1991-07-26
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Granted: 1994-09-13
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Expires: 2011-07-26
Abstract
Abstract The deposition of a copper-containing layer on a substrate by decomposing, particularly by a CVD process, a compound corresponding to the formula (I) RO--Cu--L (I) in which R represents a 1-aryl lower alkyl group, a branched, optionally substituted alkyl group with 3 to 6 carbon atoms, or an aryl group, and L represents (C1 to C6-alkyl)isonitrile, aryl isonitrile, carbon monoxide, dialkylaminodifluorophosphane, organyl difluorophosphane, triaryl phosphane, trialkyl phosphane, trifluorophosphane, or trichlorophosphane, is described, together with previously unknown compounds of formula (I) which may be used in the process.
Inventors
- 👤 Thomas Kruck
- 👤 Christian Terfloth
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 03:14
CPC Classifications
C; C07; C07F; C07F1/00; C07F1/005; C07F9/00; C07F9/02; C07F9/28; C07F9/50; C07F9/5045; C23; C23C; C23C16/00; C23C16/06; C23C16/18
Claims Analysis
Total Claims: 35
Claim 1
Independent Claim
89 words
A process for depositing a copper-containing layer on a substrate, said process comprising decomposing in the gas or vapor phase and in the presence of said substrate a compound corresponding to the formula (I) RO--Cu--L (I) wherein R represents a 1-aryl lower alkyl group, a branched, optionally substituted alkyl group with 3 to 6 carbon atoms, or an aryl group, and L represents (C1 to C6-alkyl)isonitrile, aryl isonitrile, carbon monoxide, dialkylaminodifluorophosphane, organyl difluorophosphane, triaryl phosphane, trialkyl phosphane, trifluorophosphane, or trichlorophosphane, whereby a copper-containing layer is applied to said substrate.
Claim 2
Dependent Claim
89 words
A process for depositing a copper-containing layer on a substrate, said process comprising decomposing in the gas or vapor phase and in the presence of said substrate a compound corresponding to the formula (I) RO--Cu--L (I) wherein R represents a 1-aryl lower alkyl group, a branched, optionally substituted alkyl group with 3 to 6 carbon atoms, or an aryl group, and L represents (C1 to C6-alkyl)isonitrile, aryl isonitrile, carbon monoxide, dialkylaminodifluorophosphane, organyl difluorophosphane, triaryl phosphane, trialkyl phosphane, trifluorophosphane, or trichlorophosphane, whereby a copper-containing layer is applied to said substrate.
Claim 3
Dependent Claim
37 words
A process according to claim 1, wherein R represents a branched alkyl group with 3 to 5 carbon atoms or a branched alkyl group with 3 to 5 carbon atoms substituted by at least one fluorine atom.
Claim 4
Dependent Claim
18 words
A process according to claim 2, wherein R represents an i-propyl, i-butyl, t-butyl, neopentyl, 2-trifluoromethylpropyl, or perfluoro-t-butyl group.
Claim 5
Dependent Claim
16 words
A process according to claim 1, wherein R represents a benzyl, phenyl, tolyl, or mesityl group.
Claim 6
Dependent Claim
18 words
A process according to claim 1, wherein L represents t-butyl isonitrile, carbon monoxide, triphenylphosphane, tri(lower alkyl)phosphane, or trifluorophosphane.
Claim 7
Dependent Claim
12 words
A process according to claim 5, wherein L represents trimethylphosphane or triethylphosphane.
Claim 8
Dependent Claim
32 words
A process according to claim 1, wherein L represents a branched alkyl isonitrile with 3 to 5 carbon atoms in its alkyl chain, phenyl isonitrile, tolyl isonitrile, phenyl difluorophosphane, or t-butyl difluorophosphane.
Claim 9
Dependent Claim
24 words
A process according to claim 1, wherein said decomposing step is effected thermally or by applying radiant energy to said compound of formula (I).
Claim 10
Dependent Claim
22 words
A process according to claim 8, wherein said decomposing step is effected by applying laser radiation to said compound of formula (I).
Claim 11
Dependent Claim
24 words
A process according to claim 8, wherein said decomposing step is effected thermally by heating said substrate to a temperature above about 150° C.
Claim 12
Dependent Claim
23 words
A process according to claim 1, wherein said compound of formula (I) is converted into the vapor phase and decomposed under reduced pressure.
Claim 13
Dependent Claim
24 words
A process according to claim 11, wherein said compound of formula (I) is converted to the vapor phase while entrained in a carrier gas.
Claim 14
Dependent Claim
27 words
A process according to claim 1, wherein said substrate is composed of an inorganic material selected from the group consisting of metals, semiconductors, ceramics, and glass phases.
Claim 15
Dependent Claim
29 words
A process according to claim 1, wherein said substrate is composed of an organic material selected from the group consisting of polyphenylene sulfide polymers, polyimide polymers, and carbon fibers.
Claim 16
Dependent Claim
107 words
A process for depositing a copper-containing layer on a substrate, said process comprising decomposing in the presence of said substrate a compound corresponding to the formula (I) RO--Cu--L (I) wherein R represents a 1-aryl lower alkyl group a branched, optionally substituted alkyl group with 3 to 6 carbon atoms, or an aryl group, and L represents (C1 to C6-alkyl)isonitrile aryl isonitrile, carbon monoxide, dialkylaminodifluorophosphane, organyl difluorophosphane, triaryl phosphane, trialkyl phosphane, trifluorophosphane, or trichlorophosphane, wherein said decomposing step is effected under an inert gas atmosphere or a reducing gas atmosphere, whereby a copper-containing layer containing copper essentially in the form of metallic copper is deposited on said substrate.
Claim 17
Dependent Claim
107 words
A process for depositing a copper-containing layer on a substrate, said process comprising decomposing in the presence of said substrate a compound corresponding to the formula (I) RO--Cu--L (I) wherein R represents a 1-aryl lower alkyl group a branched, optionally substituted alkyl group with 3 to 6 carbon atoms, or an aryl group, and L represents (C1 to C6-alkyl)isonitrile aryl isonitrile, carbon monoxide, dialkylaminodifluorophosphane, organyl difluorophosphane, triaryl phosphane, trialkyl phosphane, trifluorophosphane, or trichlorophosphane, wherein said decomposing step is effected under an inert gas atmosphere or a reducing gas atmosphere, whereby a copper-containing layer containing copper essentially in the form of metallic copper is deposited on said substrate.
Claim 18
Dependent Claim
108 words
A process for depositing a copper-containing layer on a substrate, said process comprising decomposing in the presence of said substrate a compound corresponding to the formula (I) RO--Cu--L (I) wherein R represents a 1-aryl lower alkyl group, a branched, optionally substituted alkyl group with 3 to 6 carbon atoms, or an aryl group and L represents (C1 to C6-alkyl)isonitrile, aryl isonitrile, carbon monoxide, dialkylaminodifluorophosphane, organyl difluorophosphane, triaryl phosphane, trialkyl phosphane, trifluorophosphane, or trichlorophosphane, wherein said decomposing step is effected in the presence of a reactive oxidizing or hydrolyzing gas atmosphere, whereby a copper-containing layer containing copper essentially in the form of copper oxide is deposited on said substrate.
Claim 19
Dependent Claim
108 words
A process for depositing a copper-containing layer on a substrate, said process comprising decomposing in the presence of said substrate a compound corresponding to the formula (I) RO--Cu--L (I) wherein R represents a 1-aryl lower alkyl group, a branched, optionally substituted alkyl group with 3 to 6 carbon atoms, or an aryl group and L represents (C1 to C6-alkyl)isonitrile, aryl isonitrile, carbon monoxide, dialkylaminodifluorophosphane, organyl difluorophosphane, triaryl phosphane, trialkyl phosphane, trifluorophosphane, or trichlorophosphane, wherein said decomposing step is effected in the presence of a reactive oxidizing or hydrolyzing gas atmosphere, whereby a copper-containing layer containing copper essentially in the form of copper oxide is deposited on said substrate.
Claim 20
Dependent Claim
109 words
A process for depositing a copper-containing layer on a substrate, said process comprising decomposing in the presence of said substrate a compound corresponding to the formula (I) RO--Cu--L (I) wherein R represents a 1-aryl lower alkyl group, a branched, optionally substituted alkyl group with 3 to 6 carbon atoms, or an aryl group, and L represents (C1 to C6-alkyl)isonitrile, aryl isonitrile, carbon monoxide, dialkylaminodifluorophosphane, organyl difluorophosphane, triaryl phosphane, trialkyl phosphane, trifluorophosphane, or trichlorophosphane, wherein said compound of formula (I) and at least one compound of at least one metal other than copper are decomposed, thereby to deposit layers containing copper and at least one other metal on said substrate.
Claim 21
Dependent Claim
109 words
A process for depositing a copper-containing layer on a substrate, said process comprising decomposing in the presence of said substrate a compound corresponding to the formula (I) RO--Cu--L (I) wherein R represents a 1-aryl lower alkyl group, a branched, optionally substituted alkyl group with 3 to 6 carbon atoms, or an aryl group, and L represents (C1 to C6-alkyl)isonitrile, aryl isonitrile, carbon monoxide, dialkylaminodifluorophosphane, organyl difluorophosphane, triaryl phosphane, trialkyl phosphane, trifluorophosphane, or trichlorophosphane, wherein said compound of formula (I) and at least one compound of at least one metal other than copper are decomposed, thereby to deposit layers containing copper and at least one other metal on said substrate.
Claim 22
Dependent Claim
19 words
A process according to claim 17, wherein said compound of a metal other than copper is an aluminum compound.
Claim 23
Dependent Claim
15 words
A process according to claim 17, wherein a plurality of different layers are deposited successively.
Claim 24
Dependent Claim
41 words
A process according to claim 17, wherein said compound of formula I and said at least one compound of at least one metal other than copper are decomposed simultaneously to form a layer containing copper and at least one other metal.
Claim 25
Dependent Claim
72 words
A compound corresponding to the formula (I) RO--Cu--L (I) wherein R represents a 1-aryl lower alkyl group, a branched, optionally substituted alkyl group with 3 to 6 carbon atoms, or an aryl group, and L represents (C1 to C6-alkyl)isonitrile, aryl isonitrile, carbon monoxide, dialkylaminodifluorophosphane, organyl difluorophosphane, triaryl phosphane, trialkyl phosphane, trifluorophosphane, or trichlorophosphane; with the exception of compounds in which R represents t-butyl, and L represents t-butyl isonitrile, carbon monoxide or triethylphosphane.
Claim 26
Dependent Claim
72 words
A compound corresponding to the formula (I) RO--Cu--L (I) wherein R represents a 1-aryl lower alkyl group, a branched, optionally substituted alkyl group with 3 to 6 carbon atoms, or an aryl group, and L represents (C1 to C6-alkyl)isonitrile, aryl isonitrile, carbon monoxide, dialkylaminodifluorophosphane, organyl difluorophosphane, triaryl phosphane, trialkyl phosphane, trifluorophosphane, or trichlorophosphane; with the exception of compounds in which R represents t-butyl, and L represents t-butyl isonitrile, carbon monoxide or triethylphosphane.
Claim 27
Dependent Claim
37 words
A compound according to claim 21, wherein R represents a branched alkyl group with 3 to 5 carbon atoms or a branched alkyl group with 3 to 5 carbon atoms substituted by at least one fluorine atom.
Claim 28
Dependent Claim
18 words
A compound according to claim 22, wherein R represents an i-propyl, i-butyl, t-butyl, neopentyl, 2-trifluoromethylpropyl, or perfluoro-t-butyl group.
Claim 29
Dependent Claim
16 words
A compound according to claim 21, wherein R represents a benzyl, phenyl, tolyl, or mesityl group.
Claim 30
Dependent Claim
18 words
A compound according to claim 21, wherein L represents t-butyl isonitrile, carbon monoxide, triphenylphosphane, tri(lower alkyl)phosphane, or trifluorophosphane.
Claim 31
Dependent Claim
12 words
A compound according to claim 25, wherein L represents trimethylphosphane or triethylphosphane.
Claim 32
Dependent Claim
32 words
A compound according to claim 21, wherein L represents a branched alkyl isonitrile with 3 to 5 carbon atoms in its alkyl chain, phenyl isonitrile, tolyl isonitrile, phenyl difluorophosphane, or t-butyl difluorophosphane.
Claim 33
Dependent Claim
24 words
A compound according to claim 21, selected from the group consisting of: t-butoxy-copper-t-butyl difluorophosphane, t-butoxy-copper-phenyl difluorophosphane, t-butoxy-copper-diethylaminodifluorophosphane, 2-trifluoromethylpropan-2-oxy-copper-t-butyl isonitrile, 2-trifluoromethylpropan-2-oxy-copper-trimethylphosphane, perfluoro-t-butoxy-copper-t-butyl isonitrile, and perfluoro-t-butoxy-copper-trimethylphosphane.
Claim 34
Dependent Claim
3 words
2-trifluoromethylpropan-2-oxy-copper or perfluoro-t-butoxy-copper.
Claim 35
Dependent Claim
3 words
2-trifluoromethylpropan-2-oxy-copper or perfluoro-t-butoxy-copper.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1997-09-12 | 1998-03-14 | 1998-09-13 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2001-09-12 | 2002-03-14 | 2002-09-13 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2005-09-12 | 2006-03-14 | 2006-09-13 | $7700.00 | Window Closed / Lapsed |