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US5345816A Expired / Lapsed US ⏱️ 0.0 years remaining

Integrated tip strain sensor for use in combination with a single axis atomic force microscope

Assignee: GlobalFoundries Inc
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Filing: 1993-11-24
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Granted: 1994-09-13
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Expires: 2013-11-24
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Abstract

Abstract An integrated tip strain sensor is combination with a single axis atomic force microscope (AFM) for determining the profile of a surface in three dimensions. A cantilever beam carries an integrated tip stem on which is deposited a piezoelectric film strain sensor. A high-resolution direct electron beam (e-beam) deposition process is used to grow a sharp tip onto the silicon (Si) cantilever structure. The direct e-beam deposition process permits the controllable fabrication of high-aspect ratio, nanometer-scale tip structures. A piezoelectric jacket with four superimposed elements is deposited on the tip stem. The piezoelectric sensors function in a plane perpendicular to that of a probe in the AFM; that is, any tip contact with the linewidth surface will cause tip deflection with a corresponding proportional electrical signal output. This tip strain sensor, coupled to a standard single axis AFM tip, allows for three-dimensional metrology with a much simpler approach while avoiding catastrophic tip "crashes". Two-dimensional edge detection of the sidewalls is used to calculate the absolute value or the linewidth of overlay, independent of the AFM principle. The technique works on any linewidth surface material, whether conductive, non-conductive or semiconductive.

Inventors

  • 👤 Joachim Clabes
  • 👤 Henri A. Khoury
  • 👤 Laszlo Landstein

Bibliographic Details

Application Number —
Jurisdiction US
Data Source google_patents
Last Synchronized 2026-10-28 12:32
CPC Classifications
G; G01; G01Q; G01Q60/00; G01Q60/24; G01Q60/38; B; B82; B82Y; B82Y35/00; G01B; G01B7/00; G01B7/004; G01B7/008; G01B7/012; G01Q20/00; G01Q20/04; G03; G03F; G03F7/00; G03F7/70; G03F7/70483; G03F7/70605; G03F7/70616; G03F7/70633; Y; Y10; Y10S; Y10S977/00; Y10S977/84; Y10S977/849; Y10S977/852; Y10S977/86; Y10S977/875; Y10S977/878

Claims Analysis

Total Claims: 13
Claim 1
Independent Claim 161 words
A method of manufacturing an integrated tip strain sensor in combination with an atomic force microscope (AFM) for profiling a surface in three dimensions, the method comprising the steps of: using a high resolution direct electron beam (e-beam) deposition process to grow a tip on a tip stem integral with a cantilever beam structure; depositing a continuous piezoelectric material coating on the tip stem; treating said piezoelectric material in an oxygen-containing environment to crystallize said piezoelectric material into a proper phase and to oxidize the exposed cantilever beam structure, thereby achieving an electrical insulating coating on the same; applying a metal film onto the piezoelectric material coating and at least a bottom surface of the cantilever beam structure as an overcoat to form strain sensor contacts; and patterning the metal film to yield electrical conductors which extend along the tip stem and along a bottom length of the cantilever beam structure to provide output signal lines from the strain sensor contacts.
Claim 2
Independent Claim 161 words
A method of manufacturing an integrated tip strain sensor in combination with an atomic force microscope (AFM) for profiling a surface in three dimensions, the method comprising the steps of: using a high resolution direct electron beam (e-beam) deposition process to grow a tip on a tip stem integral with a cantilever beam structure; depositing a continuous piezoelectric material coating on the tip stem; treating said piezoelectric material in an oxygen-containing environment to crystallize said piezoelectric material into a proper phase and to oxidize the exposed cantilever beam structure, thereby achieving an electrical insulating coating on the same; applying a metal film onto the piezoelectric material coating and at least a bottom surface of the cantilever beam structure as an overcoat to form strain sensor contacts; and patterning the metal film to yield electrical conductors which extend along the tip stem and along a bottom length of the cantilever beam structure to provide output signal lines from the strain sensor contacts.
Claim 3
Dependent Claim 19 words
The method recited in claim 1 further comprising the step of etching said piezoelectric material coating into four quadrants.
Claim 4
Dependent Claim 13 words
A method as recited in claim 1, wherein said cantilever structure comprises silicon.
Claim 5
Dependent Claim 16 words
A method as recited in claim 1, wherein said piezoelectric material comprises lead zirconate titanate (PZT).
Claim 6
Dependent Claim 16 words
A method as recited in claim 1, wherein said piezoelectric material is lead zirconate titanate (PZT).
Claim 7
Dependent Claim 18 words
A method as recited in claim 1, wherein said step of patterning comprises using a laser ablation technique.
Claim 8
Dependent Claim 18 words
A method as recited in claim 1, wherein said step of patterning comprises using an ion milling technique.
Claim 9
Dependent Claim 18 words
A method as recited in claim 1, wherein said step of patterning comprises using an e-beam patterning technique.
Claim 10
Dependent Claim 15 words
A method as recited in claim 1, wherein said cantilever structure is formed of silicon.
Claim 11
Dependent Claim 21 words
A method as recited in claim 1, wherein said treating step comprises heat treating said piezoelectric material in an oxygen-containing environment.
Claim 12
Dependent Claim 41 words
A method as recited in claim 1, wherein said treating step comprises heat treating said piezoelectric material in an oxygen-containing environment to crystallize said piezoelectric material into a proper phase and to oxidize the exposed cantilever structure and the tip stem.
Claim 13
Dependent Claim 35 words
A method as recited in claim 1, wherein said applying step comprises applying a continuous metal film onto the piezoelectric material coating and at least the bottom surface of the cantilever beam as an overcoat.

USPTO Annuity & Maintenance Windows

Annuity Stage Window Opens Payment Deadline Surcharge Period Until Estimated Fee Status
3.5 Years (Year 4) 1997-09-12 1998-03-14 1998-09-13 $2000.00 Window Closed / Lapsed
7.5 Years (Year 8) 2001-09-12 2002-03-14 2002-09-13 $3760.00 Window Closed / Lapsed
11.5 Years (Year 12) 2005-09-12 2006-03-14 2006-09-13 $7700.00 Window Closed / Lapsed

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