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US5344796A
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Method for making polycrystalline silicon thin film
Assignee: Samsung Display Co Ltd
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Filing: 1992-12-30
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Granted: 1994-09-06
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Expires: 2012-12-30
Abstract
Abstract A method for making a polycrystalline silicon thin film by crystallizing an amorphous silicon thin film at a low temperature of 500° C. to 600° C. Over a glass substrate is deposited a microcrystalline silicon seed layer having a thickness of 100 Å to 500 Å, using the chemical vapor deposition method. Over the microcrystalline silicon seed layer, a hydrogen-containing amorphous silicon layer is formed by chemical vapor deposition, at a temperature of 180° C. to 270° C., which is then crystallized to form a polycrystalline silicon thin film. A hydrogen-containing amorphous silicon layer having a thickness of 300 Å to 500 Å may be formed over the glass substrate. In this case, the hydrogen-containing amorphous silicon layer is crystallized at a temperature of 600° C., to form a polycrystaline seed layer. Over the polycrystalline silicon seed layer, another hydrogen-containing amorphous silicon layer is formed which is then crystallized by a heat treatment, to form a polycrystalline thin film. The heat treatment is carried out at a temperature of 580° C. to 600° C. for a period of 20 hours to 50 hours.
Inventors
- 👤 Jong Y. Shin
- 👤 Suk B. Ma
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 03:34
CPC Classifications
H; H10; H10P; H10P14/00; H10P14/20; H10P14/24; C; C23; C23C; C23C16/00; C23C16/02; C23C16/22; C23C16/24; C23C16/56; C30; C30B; C30B1/00; C30B1/02; C30B1/023; C30B29/00; C30B29/02; C30B29/06; H10P14/27; H10P14/271; H10P14/274; H10P14/29; H10P14/2901; H10P14/2922; H10P14/32; H10P14/3202; H10P14/3204; H10P14/3211; H10P14/34; H10P14/3402; H10P14/3404; H10P14/3411; H10P14/38; H10P14/3802
Claims Analysis
Total Claims: 8
Claim 1
Independent Claim
73 words
A method of making a polycrystalline silicon thin film comprising the steps of: preparing a glass substrate; forming a microcrystalline silicon layer as a seed layer over the glass substrate; forming a hydrogen-containing amorphous silicon layer over the microcrystalline silicon seed layer by chemical vapor deposition at a temperature in the range of 180° C. to 270° C.; and heat treating the hydrogen-containing amorphous silicon layer, to form a polycrystalline silicon thin film.
Claim 2
Independent Claim
73 words
A method of making a polycrystalline silicon thin film comprising the steps of: preparing a glass substrate; forming a microcrystalline silicon layer as a seed layer over the glass substrate; forming a hydrogen-containing amorphous silicon layer over the microcrystalline silicon seed layer by chemical vapor deposition at a temperature in the range of 180° C. to 270° C.; and heat treating the hydrogen-containing amorphous silicon layer, to form a polycrystalline silicon thin film.
Claim 3
Dependent Claim
27 words
A method in accordance with claim 1, wherein the microcrystalline silicon seed layer formed over the glass substrate has a thickness of 100 Å to 500 Å.
Claim 4
Dependent Claim
56 words
A method in accordance with claim 1, wherein the hydrogen-containing amorphous silicon layer has a thickness of not more than 1,000 Å and is crystallized at a temperature of 580° C. to 600° C. for a period of 20 hours to 50 hours at a heat treating step thereof, to form the polycrystalline silicon thin film.
Claim 5
Independent Claim
88 words
A method for making a polycrystalline silicon thin film comprising the steps of: preparing a glass substrate; forming a hydrogen-containing amorphous silicon layer over the glass substrate; heat treating the hydrogen-containing amorphous silicon layer, to form a polycrystalline silicon layer as a seed layer; forming another hydrogen-containing amorphous silicon layer over the polycrystalline silicon seed layer by chemical vapor deposition at a temperature in the range of 180° C. to 270° C.; and heat treating said other hydrogen-containing amorphous silicon layer, to form a polycrystalline silicon thin film.
Claim 6
Independent Claim
88 words
A method for making a polycrystalline silicon thin film comprising the steps of: preparing a glass substrate; forming a hydrogen-containing amorphous silicon layer over the glass substrate; heat treating the hydrogen-containing amorphous silicon layer, to form a polycrystalline silicon layer as a seed layer; forming another hydrogen-containing amorphous silicon layer over the polycrystalline silicon seed layer by chemical vapor deposition at a temperature in the range of 180° C. to 270° C.; and heat treating said other hydrogen-containing amorphous silicon layer, to form a polycrystalline silicon thin film.
Claim 7
Dependent Claim
49 words
A method in accordance with claim 4, wherein the hydrogen-containing amorphous silicon layer formed over the glass substrate has a thickness of 300 Å to 600 Å and is crystallized at a temperature of 600° C. at the heat treating step thereof, to form the polycrystalline silicon seed layer.
Claim 8
Dependent Claim
57 words
A method in accordance with claim 1, wherein the another hydrogen-containing amorphous silicon layer has a thickness of not more than 1,000 Å and is crystallized at a temperature of 580° C. to 600° C. for a period of 20 hours to 50 hours at the heat treating step thereof, to form the polycrystalline silicon thin film.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
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| 3.5 Years (Year 4) | 1997-09-05 | 1998-03-07 | 1998-09-06 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2001-09-05 | 2002-03-07 | 2002-09-06 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2005-09-05 | 2006-03-07 | 2006-09-06 | $7700.00 | Window Closed / Lapsed |