Semiconductor device and a method of fabricating the same

Claim 2

A semiconductor device comprising: a semiconductor substrate; a p-type impurity diffused region formed in the semiconductor substrate; a polycide interconnection electrically connected to the p-type impurity diffused region, wherein the polycide interconnection comprises a first p-type impurity doped polysilicon film, a refractory metal silicide film formed on the first p-type impurity doped polysilicon film, and a second p-type impurity doped polysilicon film formed on the refractory metal silicide film, the refractory metal silicide film being deposited without heat treatment for silicidation, the refractory metal silicide film being doped with p-type impurities; and an insulating layer deposited on the second p-type impurity doped polysilicon film, thereby eliminating an interface between the refractory metal silicide film and the insulating layer, and preventing formation of a segregation site for the p-type impurities during a heat treatment performed after depositing the insulating layer on the second p-type impurity doped polysilicon film.

Claim 3

A semiconductor device according to claim 1 further comprising a p-channel MOS transistor formed on the semiconductor substrate, wherein the p-type impurity diffused region is either one of a source and a drain of the p-channel MOS transistor.

Claim 4

A semiconductor device according to claim 1 or 2, wherein the first p-type impurity doped polysilicon film in the polycide interconnection has a portion in which n-type impurities are diffused, and the portion does not exist over the p-type impurity diffused region in the semiconductor substrate.

Claim 5

A semiconductor device comprising: a polycide interconnection to be connected to both an n-type impurity diffused region and a p-type impurity diffused region in a semiconductor substrate, the polycide interconnection comprising a first polysilicon film, a refractory metal silicide film formed on the first polysilicon film, and a second polysilicon film formed on the refractory metal silicide film, the refractory metal silicide film being deposited without heat treatment for silicidation, the refractory metal silicide film being doped with p-type impurities; and an insulating layer deposited on the second polysilicon film, wherein the first polysilicon film has both a p-type impurity diffused portion which is connected to the p-type impurity diffused region in the semiconductor substrate and an n-type impurity diffused portion which is connected to the n-type impurity diffused region in the semiconductor substrate, and the p-type impurities are substantially uniformly diffused in a lateral direction in the entire second polysilicon film, thereby eliminating an interface between the refractory metal silicide film and the insulating layer, and preventing formation of a segregation site for the p-type impurities during a heat treatment performed after depositing the insulating layer on the second polysilicon film.

Claim 6

A semiconductor device comprising: a polycide interconnection to be connected to both an n-type impurity diffused region and a p-type impurity diffused region in a semiconductor substrate, the polycide interconnection comprising a first polysilicon film, a refractory metal silicide film formed on the first polysilicon film, and a second polysilicon film formed on the refractory metal silicide film, the refractory metal silicide film being deposited without heat treatment for silicidation, the refractory metal silicide film being doped with p-type impurities; and an insulating layer deposited on the second polysilicon film, wherein the first polysilicon film has both a p-type impurity diffused portion which is connected to the p-type impurity diffused region in the semiconductor substrate and an n-type impurity diffused portion which is connected to the n-type impurity diffused region in the semiconductor substrate, and the p-type impurities are substantially uniformly diffused in a lateral direction in the entire second polysilicon film, thereby eliminating an interface between the refractory metal silicide film and the insulating layer, and preventing formation of a segregation site for the p-type impurities during a heat treatment performed after depositing the insulating layer on the second polysilicon film.

Claim 7

A CMOS semiconductor device comprising: a semiconductor substrate; and an n-channel MOS transistor and a p-channel MOS transistor formed at the semiconductor substrate, wherein the n-channel MOS transistor has an n-type source and an n-type drain formed from an n-type impurity diffused region in the semiconductor substrate, and the p-channel MOS transistor has a p-type source and a p-type drain formed from a p-type impurity diffused region in the semiconductor substrate, the CMOS semiconductor device further comprises a first polysilicon film, a refractory metal silicide film formed on the first polysilicon film, a second polysilicon film formed on the refractory metal silicide film and an insulating layer deposited on the second polysilicon film, wherein the refractory metal silicide film is deposited without heat treatment for silicidation, and the refractory metal silicide film is doped with p-type impurities, the first polysilicon film having both an n-type impurity diffused portion which is connected to the n-type source or the n-type drain and a p-type impurity diffused portion which is connected to the p-type source or the p-type drain, and the p-type impurities being substantially uniformly diffused in a lateral direction in the entire second polysilicon film, thereby eliminating an interface between the refractory metal silicide film and the insulating layer, and preventing formation of a segregation site for the p-type impurities during a heat treatment performed after depositing the insulating layer on the second polysilicon film.

Claim 8

A CMOS semiconductor device comprising: a semiconductor substrate; and an n-channel MOS transistor and a p-channel MOS transistor formed at the semiconductor substrate, wherein the n-channel MOS transistor has an n-type source and an n-type drain formed from an n-type impurity diffused region in the semiconductor substrate, and the p-channel MOS transistor has a p-type source and a p-type drain formed from a p-type impurity diffused region in the semiconductor substrate, the CMOS semiconductor device further comprises a first polysilicon film, a refractory metal silicide film formed on the first polysilicon film, a second polysilicon film formed on the refractory metal silicide film and an insulating layer deposited on the second polysilicon film, wherein the refractory metal silicide film is deposited without heat treatment for silicidation, and the refractory metal silicide film is doped with p-type impurities, the first polysilicon film having both an n-type impurity diffused portion which is connected to the n-type source or the n-type drain and a p-type impurity diffused portion which is connected to the p-type source or the p-type drain, and the p-type impurities being substantially uniformly diffused in a lateral direction in the entire second polysilicon film, thereby eliminating an interface between the refractory metal silicide film and the insulating layer, and preventing formation of a segregation site for the p-type impurities during a heat treatment performed after depositing the insulating layer on the second polysilicon film.

Claim 9

A semiconductor device comprising: a semiconductor substrate; a source and a drain formed in the semiconductor substrate; a gate insulating film formed on the semiconductor substrate; a gate electrode formed on the gate insulating film, wherein the gate electrode has a first p-type impurity doped polysilicon film, a refractory metal silicide film formed on the first p-type impurity doped polysilicon film, and a second p-type impurity doped polysilicon film formed on the refractory metal silicide film, the refractory metal silicide film being deposited without heat treatment for silicidation, the refractory metal silicide film being doped with p-type impurities; and an insulating layer deposited on the second p-type impurity doped polysilicon film, thereby eliminating an interface between the refractory metal silicide film and the insulating layer, and preventing formation of a segregation site for the p-type impurities during a heat treatment performed after depositing the insulating layer on the second p-type impurity doped polysilicon film.

Claim 10

A semiconductor device comprising: a semiconductor substrate; a source and a drain formed in the semiconductor substrate; a gate insulating film formed on the semiconductor substrate; a gate electrode formed on the gate insulating film, wherein the gate electrode has a first p-type impurity doped polysilicon film, a refractory metal silicide film formed on the first p-type impurity doped polysilicon film, and a second p-type impurity doped polysilicon film formed on the refractory metal silicide film, the refractory metal silicide film being deposited without heat treatment for silicidation, the refractory metal silicide film being doped with p-type impurities; and an insulating layer deposited on the second p-type impurity doped polysilicon film, thereby eliminating an interface between the refractory metal silicide film and the insulating layer, and preventing formation of a segregation site for the p-type impurities during a heat treatment performed after depositing the insulating layer on the second p-type impurity doped polysilicon film.

Claim 13

A method of fabricating a semiconductor device according to claim 7, wherein the step of doping p-type impurities uses ion implantation process.