Conductive chip-type ceramic element and method of manufacture thereof

Claim 2

A chip-type ceramic element comprising: a conductive ceramic body having opposing end surfaces; a terminal electrode covering each of said opposing end surfaces; an insulating layer made from an inorganic insulating material; said insulating layer covering at least a portion of said ceramic body; each said terminal electrode including a first layer contacting said ceramic body; and said first layer being a baked electrode layer, wherein said baked electrode layer is a burned combination of said insulating material and a conductive paste.

Claim 3

A chip-type element according to claim 1, said insulating layer includes: at least 50% by weight SiO 2 ; and a remainder being at least one oxide selected from the group consisting of Al 2 O 3 , MgO, ZrO 2 , and TiO 2 .

Claim 4

A chip-type element according to claim 1, wherein said insulating layer includes at least one oxide selected from the group consisting of SiO 2 , B 2 O 3 , Na 2 O PbO, ZnO and BaO; said chip-type element further comprising: said conductive paste including a binding material; and said conductive paste including at least one oxide selected form the group consisting of SiO 2 , B 2 O 3 , Na 2 O, PbO, ZnO, TiO 2 , K 2 O and BaO; said conductive paste having been heated to a temperature to react with said insulating layer.

Claim 5

A chip-type element according to claim 2, wherein said insulating layer is a crystallized glass.

Claim 6

A chip-type element according to claim 3, wherein said insulating layer is a crystallized glass.

Claim 7

A chip-type ceramic element comprising: a conductive ceramic body having opposing end surfaces; a terminal electrode covering each of said opposing end surfaces; an insulating layer made from an inorganic insulating material; said insulating layer covering at least a portion of said ceramic body; each said terminal electrode including a first layer contacting said ceramic body; said first layer being a baked electrode layer, wherein said baked electrode layer is a burned combination of said insulating material and a conductive paste; and each said terminal electrode includes a second layer of nickel on said baked electrode layer; and each said terminal further includes a third layer of tin on said second layer.

Claim 8

A chip-type ceramic element comprising: a conductive ceramic body having opposing end surfaces; a terminal electrode covering each of said opposing end surfaces; an insulating layer made from an inorganic insulating material; said insulating layer covering at least a portion of said ceramic body; each said terminal electrode including a first layer contacting said ceramic body; said first layer being a baked electrode layer, wherein said baked electrode layer is a burned combination of said insulating material and a conductive paste; and each said terminal electrode includes a second layer of nickel on said baked electrode layer; and each said terminal further includes a third layer of tin on said second layer.

Claim 9

A chip-type ceramic element comprising: a conductive ceramic body having opposing end surfaces; a terminal electrode covering each of said opposing end surfaces; an insulating layer made from an inorganic insulating material; wherein said insulating layer covers an entire surface of said ceramic body except for portions of said ceramic body covered by each of said terminal electrodes; each said terminal electrode including a first layer contacting said ceramic body; and said first layer being a baked electrode layer, wherein said baked electrode layer is a burned combination of said insulating material and a conductive paste.

Claim 10

A chip-type ceramic element comprising: a conductive ceramic body having opposing end surfaces; a terminal electrode covering each of said opposing end surfaces; an insulating layer made from an inorganic insulating material; wherein said insulating layer covers an entire surface of said ceramic body except for portions of said ceramic body covered by each of said terminal electrodes; each said terminal electrode including a first layer contacting said ceramic body; and said first layer being a baked electrode layer, wherein said baked electrode layer is a burned combination of said insulating material and a conductive paste.

Claim 11

A chip-type element according to claim 5, wherein said insulating layer is 0.1 to 6 μm thick, thin enough to permit substantial absorption during formation of said baked electrode layer.

Claim 12

A chip-type element according to claim 5, wherein said insulating layer is a crystallized glass.

Claim 13

A chip-type element according to claim 5, further comprising: a conductive inner electrode in electrical contact with each of said opposing end surfaces; said insulating layer covering said conductive inner electrode; said baked electrode layer covering said conductive inner electrode and at least a portion a portion of said insulating layer on sides of said conductive ceramic body; means for electrically connecting said conductive inner electrode to said baked electrode layer through said insulating layer; and said means for electrically connecting including openings in said insulating layer produced by reaction of said insulating layer with said baked electrode layer.

Claim 14

A chip-type element according to claim 10, wherein said baked electrode layer is a burned combination of said insulating material and a conductive paste.

Claim 15

A chip-type element according to claim 10, wherein said terminal electrode includes: a layer of nickel on said baked electrode layer; and a layer of tin on said layer of nickel.

Claim 16

A chip-type element according to claim 12, wherein said insulating layer is 0.1 to 10 μm thick.

Claim 17

A chip-type element according to claim 12, said insulating layer includes: at least 50% by weight SiO 2 ; and a remainder being at least one oxide selected from the group consisting of Al 2 O 3 , MgO, ZrO 2 , and TiO 2 .

Claim 18

A chip-type element according to claim 12, wherein said insulating layer comprises at least one oxide selected from the group consisting of SiO 2 , B 2 O 3 , Na 2 O PbO, ZnO and BaO.

Claim 19

A chip-type element according to claim 12, further comprising: said conductive paste including a binding material; and said binding material including at least one oxide selected from the group consisting of SiO 2 , B 2 O 3 , Na 2 O, PbO, ZnO, TiO 2 , K 2 O and BaO.

Claim 20

A chip-type element according to claim 12, wherein said conductive inner electrode includes substantially no wrapping area about peripheral surfaces of said ceramic body.

Claim 21

A chip-type element according to claim 17, wherein said insulating layer is 6 to 10 μm thick.

Claim 22

A chip-type element according to claim 12, wherein said conductive inner electrode includes a substantial wrapping area over peripheral surfaces of said ceramic body.

Claim 23

A chip-type element according to claim 19, further comprising: said terminal electrode including an outer electrode over said at least one layer; said conductive inner electrode having a first wrapping area; said outer electrode having a second wrapping area; and said first wrapping area being larger than said second wrapping area.

Claim 24

A chip-type element according to claim 12, further comprising: said insulating layer including at least 50% by weight SiO 2 ; a remainder of said insulating layer being at least one oxide selected from the group consisting of Al 2 O 3 , MgO, ZrO 2 , and TiO 2 ; said conductive paste including a binding material; and said binding material including at least one oxide selected from the group consisting of SiO 2 , B 2 O 3 , Na 2 O, PbO, ZnO, TiO 2 , K 2 O and BaO.

Claim 25

A chip-type element according to claim 12, further comprising: said insulating layer including at least one oxide selected from the group consisting of SiO 2 , B 2 O 3 , Na 2 O PbO, ZnO and BaO; said conductive paste including a binding material; and said binding material including at least one oxide selected from the group consisting of SiO 2 , B 2 O 3 , Na 2 O, PbO, ZnO, TiO 2 , K 2 O and BaO.

Claim 26

A chip-type ceramic element comprising: a conductive ceramic body having opposing end surfaces; a terminal electrode covering each of said opposing end surfaces; an insulating layer made from an inorganic insulating material; said insulating layer covering at least a portion of said ceramic body; each said terminal electrode including a first layer contacting said ceramic body; said means for electrically connecting including openings in said insulating layer produced by reaction of said insulating layer with said baked electrode layer; said first layer being a baked electrode layer, wherein said baked electrode layer is a burned combination of said insulating material and a conductive paste; said insulating layer including at least 50% by weight SiO 2 ; a remainder of said insulating layer being at least one oxide selected from the group consisting of Al 2 O 3 , MgO, ZrO 2 , and TiO 2 ; said conductive paste including a binding material; and said binding material including at least one oxide selected from the group consisting of SiO 2 , B 2 O 3 , Na 2 O, PbO, ZnO, TiO 2 , K 2 O and BaO.

Claim 27

A chip-type ceramic element comprising: a conductive ceramic body having opposing end surfaces; a terminal electrode covering each of said opposing end surfaces; an insulating layer made from an inorganic insulating material; said insulating layer covering at least a portion of said ceramic body; each said terminal electrode including a first layer contacting said ceramic body; said means for electrically connecting including openings in said insulating layer produced by reaction of said insulating layer with said baked electrode layer; said first layer being a baked electrode layer, wherein said baked electrode layer is a burned combination of said insulating material and a conductive paste; said insulating layer including at least 50% by weight SiO 2 ; a remainder of said insulating layer being at least one oxide selected from the group consisting of Al 2 O 3 , MgO, ZrO 2 , and TiO 2 ; said conductive paste including a binding material; and said binding material including at least one oxide selected from the group consisting of SiO 2 , B 2 O 3 , Na 2 O, PbO, ZnO, TiO 2 , K 2 O and BaO.

Claim 28

A chip-type element comprising: a conductive ceramic body having opposing end surfaces; a terminal electrode covering each of said opposing end surfaces; an insulating layer made from an inorganic insulating material; said insulating layer covering at least a portion of said ceramic body; each said terminal electrode including a first layer contacting said ceramic body; said first layer being a baked electrode layer, wherein said baked electrode layer is a burned combination of said insulating material and a conductive paste; said insulating layer including at least one oxide selected from the group consisting of SiO 2 , B 2 O 3 , Na 2 O PbO, ZnO and BaO; said conductive paste including a binding material; and said binding material including at least one oxide selected form the group consisting of SiO 2 , B 2 O 3 , Na 2 O, PbO, ZnO, TiO 2 , K 2 O and BaO.

Claim 29

A chip-type element comprising: a conductive ceramic body having opposing end surfaces; a terminal electrode covering each of said opposing end surfaces; an insulating layer made from an inorganic insulating material; said insulating layer covering at least a portion of said ceramic body; each said terminal electrode including a first layer contacting said ceramic body; said first layer being a baked electrode layer, wherein said baked electrode layer is a burned combination of said insulating material and a conductive paste; said insulating layer including at least one oxide selected from the group consisting of SiO 2 , B 2 O 3 , Na 2 O PbO, ZnO and BaO; said conductive paste including a binding material; and said binding material including at least one oxide selected form the group consisting of SiO 2 , B 2 O 3 , Na 2 O, PbO, ZnO, TiO 2 , K 2 O and BaO.

Claim 30

A chip-type element comprising: a conductive ceramic body having opposing end surfaces; a terminal electrode covering each of said opposing end surfaces; an insulating layer made from an inorganic insulating material; said insulating layer covering at least a portion of said ceramic body; each said terminal electrode including a first layer contacting said ceramic body; and said first layer being a baked electrode layer, wherein said baked electrode layer is a burned combination of said insulating material and a conductive paste; a conductive inner electrode on each of said opposing end surfaces; said insulating layer covering said conductive inner electrode; said baked electrode layer covering a portion of said insulating layer; and means for electrically connecting said conductive inner electrode to said baked electrode layer; said means for electrically connecting including openings in said insulating layer produced by reaction of said insulating layer with said baked electrode layer.

Claim 31

A chip-type element comprising: a conductive ceramic body having opposing end surfaces; a terminal electrode covering each of said opposing end surfaces; an insulating layer made from an inorganic insulating material; said insulating layer covering at least a portion of said ceramic body; each said terminal electrode including a first layer contacting said ceramic body; and said first layer being a baked electrode layer, wherein said baked electrode layer is a burned combination of said insulating material and a conductive paste; a conductive inner electrode on each of said opposing end surfaces; said insulating layer covering said conductive inner electrode; said baked electrode layer covering a portion of said insulating layer; and means for electrically connecting said conductive inner electrode to said baked electrode layer; said means for electrically connecting including openings in said insulating layer produced by reaction of said insulating layer with said baked electrode layer.

Claim 32

A chip-type ceramic element comprising; a conductive ceramic body having opposing end surfaces; a terminal electrode covering each of said opposing end surfaces; an insulating layer made from an inorganic insulating material; said insulating layer covering at least a portion of said ceramic body; each said terminal electrode including a first layer contacting said ceramic body; and said first layer being a baked electrode layer, wherein said baked electrode layer is a burned combination of said insulating material and a conductive paste, and wherein a melting point of said insulating layer is higher than a temperature used to form said baked electrode layer.

Claim 33

A chip-type ceramic element comprising; a conductive ceramic body having opposing end surfaces; a terminal electrode covering each of said opposing end surfaces; an insulating layer made from an inorganic insulating material; said insulating layer covering at least a portion of said ceramic body; each said terminal electrode including a first layer contacting said ceramic body; and said first layer being a baked electrode layer, wherein said baked electrode layer is a burned combination of said insulating material and a conductive paste, and wherein a melting point of said insulating layer is higher than a temperature used to form said baked electrode layer.

Claim 34

A chip-type ceramic element comprising: a conductive ceramic body having opposing end surfaces; a terminal electrode covering each of said opposing end surfaces; an insulating layer made from an inorganic insulating material; said insulating layer covering at least a portion of said ceramic body; each said terminal electrode including a baked electrode layer; at least a portion of said baked electrode being a baked combination of said insulating material and a conductive paste; and said conductive paste being a combination of a metal powder and an inorganic binding material.

Claim 35

A chip-type ceramic element comprising: a conductive ceramic body having opposing end surfaces; a terminal electrode covering each of said opposing end surfaces; an insulating layer made from an inorganic insulating material; said insulating layer covering at least a portion of said ceramic body; each said terminal electrode including a baked electrode layer; at least a portion of said baked electrode being a baked combination of said insulating material and a conductive paste; and said conductive paste being a combination of a metal powder and an inorganic binding material.

Claim 36

chip-type element according to claim 27, further comprising: a plating electrode on each said terminal electrode; and said plating electrode including a layer of nickel and a layer of tin.

Claim 37

A chip-type ceramic element comprising: a conductive ceramic body having opposing end surfaces; a terminal electrode covering each of said opposing end surfaces; an insulating layer made from an inorganic insulating material; said insulating layer covering at least a portion of said ceramic body; each said terminal electrode including a first inner electrode layer; each said terminal electrode including a second baked electrode layer; said baked electrode layer being a baked combination of said insulating material and a conductive paste; and said conductive paste being a combination of a metal powder and an inorganic binding material.

Claim 38

A chip-type ceramic element comprising: a conductive ceramic body having opposing end surfaces; a terminal electrode covering each of said opposing end surfaces; an insulating layer made from an inorganic insulating material; said insulating layer covering at least a portion of said ceramic body; each said terminal electrode including a first inner electrode layer; each said terminal electrode including a second baked electrode layer; said baked electrode layer being a baked combination of said insulating material and a conductive paste; and said conductive paste being a combination of a metal powder and an inorganic binding material.

Claim 39

A chip-type element according to claim 29, wherein said inner electrode does not overlap peripheral surfaces of said ceramic body.

Claim 40

A chip-type element according to claim 30, further comprising: an plating electrode on each said terminal electrode; and said plating electrode including a layer of nickel and layer of tin.

Claim 41

A chip-type element according to claim 25, wherein said inner electrode does overlap said edge on to said ceramic body.

Claim 42

A chip-type element according to claim 32, further comprising: said inner electrode layer including a first wrapping area; said baked electrode layer including a second wrapping area; and said second wrapping area being smaller than first wrapping area.

Claim 45

A method for producing a chip-type element according to claim 34 further comprising: plating a first layer of nickel on said electrode; and plating a second layer of tin on said layer of nickel.

Claim 46

A method for producing a chip-type element according to claim 34, wherein, following said step of burning, the method further includes placing a conductive metal on each of said opposing end surfaces of said ceramic body.

Claim 47

A method for producing a chip-type element according to claim 34, wherein said step of covering includes sputtering.

Claim 48

A method for producing a chip-type element according to claim 34, wherein said step of covering includes physical vapor deposition.