Patent US887952A successfully refreshed from Google Patents.
Patent US5338967A successfully refreshed from Google Patents.
US5338967A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Semiconductor device structure with plated heat sink and supporting substrate
Assignee: Mitsubishi Electric Corp
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Filing: 1993-05-06
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Granted: 1994-08-16
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Expires: 2013-05-06
Abstract
Abstract A semiconductor chip includes a semiconductor substrate having opposite front and rear surfaces and an active element on the front surface and a supporting substrate supporting the semiconductor substrate and disposed on the rear surface of the semiconductor substrate. The supporting substrate includes a radiating layer for radiating heat generated by the active element and disposed on a part of the rear surface of the semiconductor substrate directly opposite said active element and a plated metal layer of Rh, Pt, or Ni-B-W having a linear thermal expansion coefficient approximately equal to that of the semiconductor substrate and disposed on part of the rear surface of the semiconductor substrate but not directly opposite the active element. In this structure, the curvature of the chip during die-bonding is reduced. The plated metal layer is produced in a relatively simple process with no difficulty in controlling the composition of a plating solution. As a result, a semiconductor chip having improved heat radiation and RF characteristics is achieved.
Inventors
- 👤 Katsuya Kosaki
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-02 10:33
CPC Classifications
H; H10; H10W; H10W72/00; H10W72/01; H10W72/013; H10W40/00; H10W40/20; H10W40/25; H10W40/255; H10W44/00; H10W44/20; H10W70/00; H10W70/60; H10W70/67; H10W70/68; H10W70/682; H10W72/071; H10W72/073; H10W72/07331; H10W72/07336; H10W72/30; H10W72/351; H10W72/352
Claims Analysis
Total Claims: 13
Claim 1
Independent Claim
139 words
A semiconductor device structure comprising: a semiconductor substrate having opposite front and rear surfaces and an active element on the front surface; and a supporting substrate supporting said semiconductor substrate and disposed on the rear surface of the semiconductor substrate, said supporting substrate comprising: a radiating layer for radiating heat generated by said active element and disposed on a part of the rear surface of said semiconductor substrate directly opposite said active element, and p2 a plated metal layer selected from the group consisting of Rh, Pt, and Ni-B-W, said plated metal layer having a linear thermal expansion coefficient nearer to the linear thermal expansion coefficient of said semiconductor substrate than the linear thermal expansion coefficient of said radiating layer and disposed on part of the rear surface of said semiconductor substrate but not directly opposite said active element.
Claim 2
Dependent Claim
139 words
A semiconductor device structure comprising: a semiconductor substrate having opposite front and rear surfaces and an active element on the front surface; and a supporting substrate supporting said semiconductor substrate and disposed on the rear surface of the semiconductor substrate, said supporting substrate comprising: a radiating layer for radiating heat generated by said active element and disposed on a part of the rear surface of said semiconductor substrate directly opposite said active element, and p2 a plated metal layer selected from the group consisting of Rh, Pt, and Ni-B-W, said plated metal layer having a linear thermal expansion coefficient nearer to the linear thermal expansion coefficient of said semiconductor substrate than the linear thermal expansion coefficient of said radiating layer and disposed on part of the rear surface of said semiconductor substrate but not directly opposite said active element.
Claim 3
Dependent Claim
58 words
The semiconductor device structure of claim 1 wherein said semiconductor substrate includes dicing lines extending into said substrate at the front surface and said supporting substrate includes plated hard metal layers comprising a metal harder than other portions of said supporting substrate disposed on part of the rear surface of said semiconductor substrate directly opposite the dicing lines.
Claim 4
Dependent Claim
25 words
The semiconductor device structure of claim 2 wherein said plated hard metal layers are selected from the group consisting of Ni, Ni-P, and Au-Sn alloy.
Claim 5
Dependent Claim
17 words
The semiconductor device structure of claim 2 comprising a second metal layer disposed in the dicing lines.
Claim 6
Dependent Claim
159 words
A semiconductor device structure comprising; a semiconductor substrate having opposite front and rear surfaces, dicing lines extending into said substrate at the front surface, and an active element on the front surface; and a supporting substrate supporting said semiconductor substrate and disposed on the rear surface of the semiconductor substrate, said supporting substrate comprising: a metal harder than other portions of said supporting substrate disposed on part of the rear surface of said semiconductor substrate directly opposite the dicing lines; a radiating layer for radiating heat generated by said active element and disposed on a part of the rear surface of said semiconductor substrate directly opposite said active element, and a ceramic layer having a linear thermal expansion coefficient nearer to the linear thermal expansion coefficient of said semiconductor substrate than the linear thermal expansion coefficient of said radiating layer and disposed on part of the rear surface of said semiconductor substrate but not directly opposite said active element.
Claim 7
Dependent Claim
159 words
A semiconductor device structure comprising; a semiconductor substrate having opposite front and rear surfaces, dicing lines extending into said substrate at the front surface, and an active element on the front surface; and a supporting substrate supporting said semiconductor substrate and disposed on the rear surface of the semiconductor substrate, said supporting substrate comprising: a metal harder than other portions of said supporting substrate disposed on part of the rear surface of said semiconductor substrate directly opposite the dicing lines; a radiating layer for radiating heat generated by said active element and disposed on a part of the rear surface of said semiconductor substrate directly opposite said active element, and a ceramic layer having a linear thermal expansion coefficient nearer to the linear thermal expansion coefficient of said semiconductor substrate than the linear thermal expansion coefficient of said radiating layer and disposed on part of the rear surface of said semiconductor substrate but not directly opposite said active element.
Claim 8
Dependent Claim
22 words
The semiconductor device structure of claim 5 wherein said metal is selected from the group consisting of Ni, Ni-P, and Au-Sn alloy.
Claim 9
Dependent Claim
144 words
A semiconductor device structure comprising: a semiconductor substrate having opposite front and rear surfaces and an active element on the front surface; and a supporting substrate supporting said semiconductor substrate and disposed on the rear surface of the semiconductor substrate, said supporting substrate comprising; a radiating layer for radiating heat generated by said active element and disposed on a part of the rear surface of said semiconductor substrate directly opposite said active element, and a plated metal layer comprising, alternatingly laminated, Au and one selected from the group consisting of Rh, Pt, and Ni-B-W, said plated metal layer having a linear thermal expansion coefficient nearer to the linear thermal expansion coefficient of said semiconductor substrate than the linear thermal expansion coefficient of said radiating layer and disposed on part of the rear surface of said semiconductor substrate but not directly opposite said active element.
Claim 10
Dependent Claim
144 words
A semiconductor device structure comprising: a semiconductor substrate having opposite front and rear surfaces and an active element on the front surface; and a supporting substrate supporting said semiconductor substrate and disposed on the rear surface of the semiconductor substrate, said supporting substrate comprising; a radiating layer for radiating heat generated by said active element and disposed on a part of the rear surface of said semiconductor substrate directly opposite said active element, and a plated metal layer comprising, alternatingly laminated, Au and one selected from the group consisting of Rh, Pt, and Ni-B-W, said plated metal layer having a linear thermal expansion coefficient nearer to the linear thermal expansion coefficient of said semiconductor substrate than the linear thermal expansion coefficient of said radiating layer and disposed on part of the rear surface of said semiconductor substrate but not directly opposite said active element.
Claim 11
Dependent Claim
58 words
The semiconductor device structure of claim 7 wherein said semiconductor substrate includes dicing lines extending into said substrate at the front surface and said supporting substrate includes plated hard metal layers comprising a metal harder than other portions of said supporting substrate disposed on part of the rear surface of said semiconductor substrate directly opposite the dicing lines.
Claim 12
Dependent Claim
25 words
The semiconductor device structure of claim 8 wherein said plated hard metal layers are selected from the group consisting of Ni, Ni-P, and Au-Sn alloy.
Claim 13
Dependent Claim
17 words
The semiconductor device structure of claim 8 comprising a second metal layer disposed in the dicing lines.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1997-08-15 | 1998-02-14 | 1998-08-16 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2001-08-15 | 2002-02-14 | 2002-08-16 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2005-08-15 | 2006-02-14 | 2006-08-16 | $7700.00 | Window Closed / Lapsed |