US5338948A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Charge-coupled device with open gate structure
Assignee: Roper Technologies Inc
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Filing: 1993-03-16
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Granted: 1994-08-16
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Expires: 2013-03-16
Abstract
Abstract The light gathering capability or quantum efficiency of a charge-coupled device is improved by the configuration of the multi-phase gate structure to leave large surface areas of the semiconductor substrate uncovered. Each of the electrodes of the multi-phase gate structure is configured as a series of shallow H-shaped geometries, only the vertical elements of which overlap to ensure that multi-phase operation can be achieved.
Inventors
- 👤 Gary R. Sims
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-04 03:11
CPC Classifications
H; H10; H10D; H10D64/00; H10D64/60; H10D64/605; H10F; H10F39/00; H10F39/10; H10F39/12; H10F39/15; H10F39/153
Claims Analysis
Total Claims: 11
Claim 1
Independent Claim
130 words
A charge-coupled device comprising a semiconductor substrate of a first conductivity type and having an implant of the opposite conductivity type at a surface region of said substrate, said device including an electrically-insulating layer on said surface, said device also including a multi-phase electrode structure formed on said insulating layer, said electrode structure comprising a plurality of electrical conductors each comprising a series of H-shaped geometries, each of said H-shaped geometries comprising a horizontal and two vertical elements, like-positioned ones of said vertical elements of adjacent electrical conductors overlapping each other in a manner to generate therebeneath a pattern of potential wells, said pattern moving to a succession of positions beneath said vertical elements for moving charge quanta therealong in response to a multi-phase pulse sequence on said electrical conductors.
Claim 2
Dependent Claim
130 words
A charge-coupled device comprising a semiconductor substrate of a first conductivity type and having an implant of the opposite conductivity type at a surface region of said substrate, said device including an electrically-insulating layer on said surface, said device also including a multi-phase electrode structure formed on said insulating layer, said electrode structure comprising a plurality of electrical conductors each comprising a series of H-shaped geometries, each of said H-shaped geometries comprising a horizontal and two vertical elements, like-positioned ones of said vertical elements of adjacent electrical conductors overlapping each other in a manner to generate therebeneath a pattern of potential wells, said pattern moving to a succession of positions beneath said vertical elements for moving charge quanta therealong in response to a multi-phase pulse sequence on said electrical conductors.
Claim 3
Dependent Claim
29 words
A device as set forth in claim 1 wherein said substrate comprises P-type semiconductor material, said surface implant comprising N-type semiconductor material, and said insulating material comprises silicon dioxide.
Claim 4
Dependent Claim
53 words
A charge-coupled device as set forth in claim 2 also including channel stops oriented vertically with respect to the axes of said electrical conductors and positioned between associated H-shaped geometries of said plurality of electrical conductors, said channel stops being defined in said substrate and positioned at the space between adjacent H-shaped geometries.
Claim 5
Dependent Claim
26 words
A charge-coupled device as set forth in claim 3 also including a Boron implant in said substrate in areas between adjacent ones of said H-shaped geometries.
Claim 6
Dependent Claim
24 words
A charge-coupled device as set forth in claim 4 also including an anti-reflecting coating in said areas between adjacent ones of said H-shaped geometries.
Claim 7
Dependent Claim
26 words
A charge-coupled device as set forth in claim 3 including a Phosphorous implant only in the areas of said substrate in which said vertical elements overlap.
Claim 8
Dependent Claim
16 words
A charge-coupled device as set forth in claim 3 wherein said multi-phase electrode structure comprises Polysilicon.
Claim 9
Dependent Claim
26 words
A charge-coupled device as set forth in claim 3 wherein each of said channel stops is sufficiently wide to overlap adjacent ones of said vertical elements.
Claim 10
Dependent Claim
26 words
A charge-coupled device as set forth in claim 4 wherein each of said channel stops is sufficiently wide to overlap adjacent ones of said vertical elements.
Claim 11
Dependent Claim
26 words
A charge-coupled device as set forth in claim 6 wherein each of said channel stops is sufficiently wide to overlap adjacent ones of said vertical elements.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1997-08-15 | 1998-02-14 | 1998-08-16 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2001-08-15 | 2002-02-14 | 2002-08-16 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2005-08-15 | 2006-02-14 | 2006-08-16 | $7700.00 | Window Closed / Lapsed |