Abstract A CCD solid state image sensor has first and second horizontal transfer CCDs located at the upper and lower sides, respectively, of a sensing element array. Two polysilicon electrodes are located in each row of the array, a first polysilicon electrode being arranged in an up position in even-numbered columns and in a down position in odd-numbered columns, and a second polysilicon electrode being arranged in a down position in even-numbered columns and in an up position in odd-numbered columns. These electrodes form vertical transfer channels. Signal changes in the vertical transfer channels corresponding to even-numbered columns are shifted in the upward direction and the signal changes in the vertical transfer channels corresponding to the odd-numbered columns are shifted in the downward direction, onto the first and second horizontal transfer CCDs, respectively. Thus the need for a transfer electrode between the horizontal CCDs is eliminated, creating a two-level electrode structure.
A CCD solid state image sensor comprising: an array of sensing elements arranged in a multiplicity of rows and columns; a first and second horizontal transfer CCD located at upper and lower sides, respectively, of the sensing element array; and two electrodes located in each row of the array, a first electrode being arranged in an up position in even-numbered columns and in a down position in odd-numbered columns, and a second electrode being arranged in a down position in even-numbered columns and in an up position in odd-numbered columns, the electrodes forming a corresponding multiplicity of vertical transfer channels, the vertical transfer channels adapted to transfer signal charges, the signal charges shifting in the upward direction onto a first horizontal transfer CCD in the vertical transfer channels corresponding to even-numbered columns and shifting in the downward direction onto a second horizontal transfer CCD in the vertical transfer channels corresponding to the odd-numbered columns.
Claim 2
Dependent Claim
154 words
A CCD solid state image sensor comprising: an array of sensing elements arranged in a multiplicity of rows and columns; a first and second horizontal transfer CCD located at upper and lower sides, respectively, of the sensing element array; and two electrodes located in each row of the array, a first electrode being arranged in an up position in even-numbered columns and in a down position in odd-numbered columns, and a second electrode being arranged in a down position in even-numbered columns and in an up position in odd-numbered columns, the electrodes forming a corresponding multiplicity of vertical transfer channels, the vertical transfer channels adapted to transfer signal charges, the signal charges shifting in the upward direction onto a first horizontal transfer CCD in the vertical transfer channels corresponding to even-numbered columns and shifting in the downward direction onto a second horizontal transfer CCD in the vertical transfer channels corresponding to the odd-numbered columns.
Claim 3
Dependent Claim
25 words
The CCD solid state image sensor as in claim 1, further comprising a multiplicity of amplifiers coupled to the first and second horizontal transfer CCDs.