US5336623A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Process for producing integrated solar cell
Assignee: Showa Shell Sekiyu KK
•
Filing: 1993-03-02
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Granted: 1994-08-09
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Expires: 2013-03-02
Abstract
Abstract A process for producing an integrated solar cell comprising deposited unit cells having a p-i-n junction, with an n-type layer forming an n-p Junction between unit cells comprising a microcrystalline amorphous silicon layer, in which said microcrystalline amorphous silicon layer is subjected to a hydrogen discharge treatment for a given period of time. By the hydrogen discharge treatment, the film resistance of the n-type layer is reduced to accelerate ohmic property with a p-type layer thereby achieving increased conversion efficiency.
Inventors
- 👤 Porponth Sichanugrist
- 👤 Tetsuro Nii
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-01 04:43
CPC Classifications
H; H10; H10F; H10F10/00; H10F10/10; H10F10/17; H10F10/172; H10F71/00; H10F71/10; H10F71/103; Y; Y02; Y02E; Y02E10/00; Y02E10/50; Y02E10/548; Y02P; Y02P70/00; Y02P70/50
Claims Analysis
Total Claims: 4
Claim 1
Independent Claim
78 words
A process for producing an integrated solar cell for accelerating the ohmic property of an n-p junction, the integrated solar cell comprising unit cells having a p-i-n junction, with an n-type layer having a reduced resistance and forming an n-p junction between unit cells comprising a michrocrystalline amorphous silicon layer, in which the process includes a step of subjecting said michrocystalline amorphous silicon layer to a hydrogen discharge treatment for a given period of time to reduce resistance.
Claim 2
Dependent Claim
78 words
A process for producing an integrated solar cell for accelerating the ohmic property of an n-p junction, the integrated solar cell comprising unit cells having a p-i-n junction, with an n-type layer having a reduced resistance and forming an n-p junction between unit cells comprising a michrocrystalline amorphous silicon layer, in which the process includes a step of subjecting said michrocystalline amorphous silicon layer to a hydrogen discharge treatment for a given period of time to reduce resistance.
Claim 3
Dependent Claim
20 words
A process as claimed in claim 1, wherein said hydrogen discharge treatment is conducted for not more than 10 minutes.
Claim 4
Dependent Claim
19 words
A process as claimed in claim 1, wherein said hydrogen discharge treatment is conducted for 0.5 to 3.5 minutes.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1997-08-08 | 1998-02-07 | 1998-08-09 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2001-08-08 | 2002-02-07 | 2002-08-09 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2005-08-08 | 2006-02-07 | 2006-08-09 | $7700.00 | Window Closed / Lapsed |