EP0153043A2
Expired / Lapsed
EP
⏱️ 0.0 years remaining
Ohmic contact layer
Assignee: Energy Conversion Devices Inc
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Filing: 1985-01-29
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Granted: —
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Expires: 2005-01-29
Abstract
Abstract An electronic device having at least two superposed layers of amorphous semiconductor material of differing conductivity types and a sufficiently low number of defect states so as to form a rectifying junction between the layers, including a defect states introduction layer proximate the junction. The defect introduction layer includes a sufficient density of defect states to promote the flow of current by tunneling of charge carriers and thereby to establish an ohmic contact. Methods of forming the improved ohmic contact device are also disclosed.
Inventors
- 👤 Stanford R. Ovshinsky
- 👤 Stephen J. Hudgens
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-11-01 12:55
CPC Classifications
H; H10; H10F; H10F10/00; H10F10/10; H10F10/14; H10F10/142; H10F10/17; H10F10/172; H10F77/00; H10F77/10; H10F77/16; H10F77/169; H10F77/1692; Y; Y02; Y02E; Y02E10/00; Y02E10/50; Y02E10/544; Y02E10/548
Claims Analysis
Total Claims: 20
Claim 1
Independent Claim
47 words
A semiconductor device including at least two superposed amorphous semiconductor layers (44b, 46a) of differing conductivity types forming a rectifying junction characterized in that means for introducing defect states to promote the flow of current through said junction by a tunneling mechanism is disposed proximate said junction.
Claim 2
Dependent Claim
47 words
A semiconductor device including at least two superposed amorphous semiconductor layers (44b, 46a) of differing conductivity types forming a rectifying junction characterized in that means for introducing defect states to promote the flow of current through said junction by a tunneling mechanism is disposed proximate said junction.
Claim 3
Dependent Claim
37 words
The device of claim 1, characterized in that said at least two superposed layers include a plurality of pairs (42a, 42b, 42c, 42d) of alternating p-type (44a, 44b, 44c, 44d) and n-type (46a, 46b, 46c, 46d) conductivity.
Claim 4
Dependent Claim
20 words
The device of claim 2 characterized in that said layers of alternating conductivity type are less than 5 nanometers thick.
Claim 5
Dependent Claim
64 words
The device of claim 1 including at least six amorphous semiconductor layers disposed sequentially in p-type, intrinsic type and n-type conductivities to form at least two p-i-n type cells (22a, 22b) characterized in that said means for introducing defect states is disposed proximate the junction of the p-type layer (26b) of one of said cells and the n-type layer (30a) of the other cell.
Claim 6
Dependent Claim
35 words
The device of claim 1 characterized in that said means for introducing defect states (56) includes a heavily doped portion of one (46a) of said at least two layers (46a, 44b) of differing conductivity types.
Claim 7
Dependent Claim
31 words
The device of claim 5 characterized in that said means for introducing defect states (56) includes heavily doped portions of said at least two layers (46a, 44b) of differing conductivity types.
Claim 8
Dependent Claim
44 words
The device of claim 1 characterized in that said means for introducing defect states comprises a discrete layer (56) containing a relatively large density of defect states, said discrete layer being disposed between said at least two layers (46a, 44b) of differing conductivity types.
Claim 9
Dependent Claim
17 words
The device of claim 7 characterized in that said discrete layer (56) includes voids producing defect states.
Claim 10
Dependent Claim
19 words
The device of claim 7 characterized in that said discrete layer (56) comprises a sputtered layer of amorphous material.
Claim 11
Independent Claim
51 words
A method of fabricating an improved semiconductor device of the type including at least two superposed amorphous semiconductor layers of differing conductivity types forming a rectifying junction characterized by disposing, proximate said junction, means for introducing defect states to promote the flow of current through said junction by a tunneling mechanism.
Claim 12
Independent Claim
51 words
A method of fabricating an improved semiconductor device of the type including at least two superposed amorphous semiconductor layers of differing conductivity types forming a rectifying junction characterized by disposing, proximate said junction, means for introducing defect states to promote the flow of current through said junction by a tunneling mechanism.
Claim 13
Dependent Claim
21 words
The method of claim 10 characterized in successively depositing a plurality of pairs of alternating p-type conductivity and n-type conductivity layers.
Claim 14
Dependent Claim
23 words
The method of claim 11 characterized in depositing each of the layers of alternating conductivity to a thickness of less than 5 nanometers.
Claim 15
Dependent Claim
31 words
The method of claim 10 characterized in disposing said means for introducing defect states by heavily doping a portion of one of said at least two layers of differing conductivity types.
Claim 16
Dependent Claim
29 words
The method of claim 13 characterized in disposing said means for introducing defect states by heavily doping portions of both said at least two layers of differing conductivity types.
Claim 17
Dependent Claim
28 words
The method of claim 10 characterized in disposing said means for introducing defect states as a discrete layer between said at least two layers of differing conductivity types.
Claim 18
Dependent Claim
21 words
The method of claim 15 characterized in incorporating a material into said discrete layer to produce voids in said discrete layer.
Claim 19
Dependent Claim
21 words
The method of claim 16 characterized in that an inert gas is incorporated into said discrete layer to produce said voids.
Claim 20
Dependent Claim
12 words
The method as in claim 15 characterized in sputtering said discrete layer.
References Cited (Backward Citations)
No citation records indexed.
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