US4875944A
Expired / Lapsed
US
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Amorphous photoelectric converting device
Assignee: Fuji Electric Co Ltd
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Filing: 1988-09-09
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Granted: 1989-10-24
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Expires: 2008-09-09
Abstract
Abstract An amorphous photoelectric converting device that remains efficient despite exposure to heat over long periods of time is formed by placing one on top of the other a plurality of photovoltaic elements each comprising a thin film of p-i-n structure. The p-type layer and the n-type layer of adjacent elements are made of microcrystalline silicon so that good ohmic contact is established, and the p-type layer of microcrystalline silicon contains boron in an amount sufficient to neutralize the donor atoms which diffuse from the adjacent n-type layer when the device is left to stand at high temperatures for a long period of time. The amount of boron, however, is limited to such an extent that the boron atoms do not adversely affect the initial desired characteristics of the device. A preferred range of boron levels is 3×10 20 to 1×10 21 atoms/cm 3 .
Inventors
- 👤 Takashi Yoshida
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-01 05:40
CPC Classifications
H; H10; H10F; H10F10/00; H10F10/10; H10F10/17; H10F10/172; H10F77/00; H10F77/10; H10F77/12; H10F77/122; H10F77/1223; Y; Y02; Y02E; Y02E10/00; Y02E10/50; Y02E10/548
Claims Analysis
Total Claims: 9
Claim 1
Independent Claim
99 words
An amorphous photoelectric converting device comprising a plurality of photovoltaic elements laminated one on top of the other, each of said elements comprising a p-type layer, an i-type layer, and an n-type layer and having a p-i-n structure with the n-type layer and p-type layer of consecutive elements being adjacent to one another, wherein the adjacent n-type layers and p-type layers of consecutive elements comprise microcrystalline silicon and the remaining layers comprise amorphous silicon, and wherein said p-type layers of microcrystalline silicon are doped with boron, at a concentration ranging from 3×10 20 to 2×10 21 atoms/cm 3 .
Claim 2
Dependent Claim
99 words
An amorphous photoelectric converting device comprising a plurality of photovoltaic elements laminated one on top of the other, each of said elements comprising a p-type layer, an i-type layer, and an n-type layer and having a p-i-n structure with the n-type layer and p-type layer of consecutive elements being adjacent to one another, wherein the adjacent n-type layers and p-type layers of consecutive elements comprise microcrystalline silicon and the remaining layers comprise amorphous silicon, and wherein said p-type layers of microcrystalline silicon are doped with boron, at a concentration ranging from 3×10 20 to 2×10 21 atoms/cm 3 .
Claim 3
Dependent Claim
21 words
The converting device of claim 1, wherein the concentration of boron ranges from 5×10 20 to 1×10 21 atoms/cm 3 .
Claim 4
Dependent Claim
19 words
The converting device of claim 1, wherein the p-type microcrystalline silicon layer is made from hydrogenated or fluorinated silicon.
Claim 5
Dependent Claim
43 words
The converting device of claim 3, wherein the p-type microcrystalline silicon layer is made by decomposition of a material selected from the group consisting of SiH 4 , Si 2 H 6 , Si 2 H 2 F 4 ,and SiF 4 .
Claim 6
Dependent Claim
73 words
The converting device of claim 1, wherein the p-type microcrystalline layer of at least one photovoltaic element comprises two p-type sublayers, a first sublayer disposed adjacent to the n-type layer of an adjacent photovoltaic element and comprising microcrystalline silicon doped with boron, and a second sublayer disposed between the first sublayer and the adjacent i-type layer of the element and comprising an amorphous material having a band gap greater than amorphous hydrogenated silicon.
Claim 7
Dependent Claim
15 words
The converting device of claim 5, wherein the second sublayer comprises amorphous hydrogenated silicon carbide.
Claim 8
Dependent Claim
92 words
An amorphous photoelectric converting device comprising a plurality of photovoltaic elements laminated one on top of the other, each of said elements comprising a p-type layer, and i-type layer, and an n-type layer and having a p-i-n structure, with the n-type layer and p-type layer of consecutive elements being adjacent to one another, wherein the adjacent n-type layer comprises microcrystalline silicon, the adjacent p-type layer comprises microcrystalline silicon germanium doped with boron at a concentration ranging from 3×10 20 to 2×10 21 atoms/cm 3 , and the remaining layers comprise amorphous silicon.
Claim 9
Dependent Claim
92 words
An amorphous photoelectric converting device comprising a plurality of photovoltaic elements laminated one on top of the other, each of said elements comprising a p-type layer, and i-type layer, and an n-type layer and having a p-i-n structure, with the n-type layer and p-type layer of consecutive elements being adjacent to one another, wherein the adjacent n-type layer comprises microcrystalline silicon, the adjacent p-type layer comprises microcrystalline silicon germanium doped with boron at a concentration ranging from 3×10 20 to 2×10 21 atoms/cm 3 , and the remaining layers comprise amorphous silicon.
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| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
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| 3.5 Years (Year 4) | 1992-10-23 | 1993-04-24 | 1993-10-24 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1996-10-23 | 1997-04-24 | 1997-10-24 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2000-10-23 | 2001-04-24 | 2001-10-24 | $7700.00 | Window Closed / Lapsed |