US4479028A
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Amorphous solar cell
Assignee: DIRECTOR GENERAL OF AGENCY OF INDUSTRIAL SCIENCE AND TECHNOLOGY NO 3-1 KASUMIGASEKI 1-CHOME CHIYODA-KU TOKYO JAPAN
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Filing: 1982-09-29
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Granted: 1984-10-23
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Expires: 2002-09-29
Abstract
Abstract A solar cell of high transducing efficiency is provided in the form of a multi-cell laminated construction having n-type light receiving layers. A non-doped layer of the cell on the incident light side has an energy-gap higher than that of the lower cells.
Inventors
- 👤 Kazuhiko Sato
- 👤 Genshiro Nakamura
- 👤 Yoshinori Yukimoto
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-01 12:53
CPC Classifications
H; H10; H10F; H10F10/00; H10F10/10; H10F10/17; H10F10/172; H10F77/00; H10F77/10; H10F77/16; H10F77/162; H10F77/166; H10F77/1662; Y; Y02; Y02E; Y02E10/00; Y02E10/50; Y02E10/548
Claims Analysis
Total Claims: 9
Claim 1
Independent Claim
174 words
A solar cell, comprising: a first, p-type semiconductor layer of a first amorphous semiconductor material; a second, intrinsic semiconductor layer of a second amorphous semiconductor material having an energy-gap lower than the gap of said first amorphous semiconductor material and formed on said first semiconductor layer; a third, n-type semiconductor layer of said first amorphous semiconductor material formed on said second semiconductor layer; a fourth, p-type semiconductor of said first amorphous semiconductor material formed on said third semiconductor layer; a fifth, intrinsic semiconductor layer of said first amorphous semiconductor material formed on said fourth semiconductor layer; a sixth, n-type semiconductor layer of said first amorphous semiconductor material formed on said fifth semiconductor layer; a seventh, p-type semiconductor layer of said amorphous semiconductor material formed on said sixth semiconductor layer; an eighth, intrinsic semiconductor layer of said first amorphous semiconductor material formed on said seventh semiconductor layer; and a ninth, n-type semiconductor layer of said first amorphous semiconductor material formed on said eighth semiconductor layer, said ninth semiconductor layer having an incident light receiving surface.
Claim 2
Dependent Claim
174 words
A solar cell, comprising: a first, p-type semiconductor layer of a first amorphous semiconductor material; a second, intrinsic semiconductor layer of a second amorphous semiconductor material having an energy-gap lower than the gap of said first amorphous semiconductor material and formed on said first semiconductor layer; a third, n-type semiconductor layer of said first amorphous semiconductor material formed on said second semiconductor layer; a fourth, p-type semiconductor of said first amorphous semiconductor material formed on said third semiconductor layer; a fifth, intrinsic semiconductor layer of said first amorphous semiconductor material formed on said fourth semiconductor layer; a sixth, n-type semiconductor layer of said first amorphous semiconductor material formed on said fifth semiconductor layer; a seventh, p-type semiconductor layer of said amorphous semiconductor material formed on said sixth semiconductor layer; an eighth, intrinsic semiconductor layer of said first amorphous semiconductor material formed on said seventh semiconductor layer; and a ninth, n-type semiconductor layer of said first amorphous semiconductor material formed on said eighth semiconductor layer, said ninth semiconductor layer having an incident light receiving surface.
Claim 3
Dependent Claim
36 words
A solar cell as claimed in claim 1, wherein said second amorphous semiconductor material comprises a compound of a first semiconductor, and a second semiconductor with an energy-gap lower than the gap of said first semiconductor.
Claim 4
Dependent Claim
14 words
A solar cell as claimed in claim 2, wherein said first semiconductor is silicon.
Claim 5
Dependent Claim
19 words
A solar cell as claimed in claim 2, wherein said second semiconductor is an alloy of silicon and germanium.
Claim 6
Dependent Claim
17 words
A solar cell as claimed in claim 1, wherein said first amorphous semiconductor material is amorphous silicon.
Claim 7
Dependent Claim
83 words
A solar cell, as recited in claim 5, wherein: said second layer is amorphous Si 1-x Ge x :H where x is between 0.2 and 0.7 and has thickness between 2,000 Å and 10,000 Å; said fifth layer is amorphous Si:H having a thickness between 400 and 1,000 Å and a band-gap between 1.85 eV and 2.0 eV; and said eighth layer is amorphous Si:H having a thickness between 400 Å and 1,000 Å and a band-gap between 1.85 eV and 2.0 eV.
Claim 8
Dependent Claim
109 words
A solar cell, comprising: a first, p-type amorphous silicon layer; a second, intrinsic amorphous Si 1-x Ge x layer formed on said first layer where x is between 0.2 and 0.7; a third, n-type amorphous silicon layer formed on said second layer having a thickness between 50 and 200 Å; a fourth, p-type amorphous silicon layer formed on said third layer, having a thickness between 50 and 200 Å; a fifth, intrinsic amorphous silicon layer formed on said fourth layer, having a thickness between 500 and 3,000 Å; and a sixth, n-type amorphous silicon layer formed on said fifth layer, said sixth layer having an incident light receiving surface.
Claim 9
Dependent Claim
109 words
A solar cell, comprising: a first, p-type amorphous silicon layer; a second, intrinsic amorphous Si 1-x Ge x layer formed on said first layer where x is between 0.2 and 0.7; a third, n-type amorphous silicon layer formed on said second layer having a thickness between 50 and 200 Å; a fourth, p-type amorphous silicon layer formed on said third layer, having a thickness between 50 and 200 Å; a fifth, intrinsic amorphous silicon layer formed on said fourth layer, having a thickness between 500 and 3,000 Å; and a sixth, n-type amorphous silicon layer formed on said fifth layer, said sixth layer having an incident light receiving surface.
References Cited (Backward Citations)
US4377723A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1987-10-23 | 1988-04-23 | 1988-10-23 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1991-10-23 | 1992-04-23 | 1992-10-23 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1995-10-23 | 1996-04-23 | 1996-10-23 | $7700.00 | Window Closed / Lapsed |