Abstract Disclosed is a method of manufacturing an MIS-type semiconductor device having a greatly reduced interface state density. In this method, before the formation of a gate insulating film, the surface of a GaAs substrate is treated with a plasma generated from a gas containing hydrogen and nitrogen or from a gas containing hydrogen and argon, so as to reduce the interface state density. An ECR plasma is used as the plasma, so that the damage caused by the plasma to the GaAs substrate is alleviated. After the surface treatment process, an healing process is performed, which sufficiently removes the damage. During the surface treatment process using the plasma generated from the gas containing hydrogen and nitrogen, a GaN gate insulating film is formed on the surface of the GaAs substrate. The surface treatment process using the plasma generated from the gas containing hydrogen and argon is followed by the process of forming a gate insulating film on the GaAs substrate; the two processes are successively performed within the same apparatus without exposing the GaAs substrate to ambient air.
A method of manufacturing an MIS-type semiconductor device, including the steps of: introducing N 2 gas and H 2 gas into a plasma chamber; treating at least one surface of a GaAs substrate with an electron cyclotron resonance (ECR) plasma generated from both the N 2 gas and the H 2 gas which was introduced into said plasma chamber, wherein said at least one surface of the GaAs substrate surface is converted to a gallium nitride film as a result of a reaction between said GaAs substrate and said nitrogen during said step of treating said at least one surface of the GaAs substrate.
Claim 2
Independent Claim
104 words
A method of manufacturing an MIS-type semiconductor device, including the steps of: introducing N 2 gas and H 2 gas into a plasma chamber; treating at least one surface of a GaAs substrate with an electron cyclotron resonance (ECR) plasma generated from both the N 2 gas and the H 2 gas which was introduced into said plasma chamber, wherein said at least one surface of the GaAs substrate surface is converted to a gallium nitride film as a result of a reaction between said GaAs substrate and said nitrogen during said step of treating said at least one surface of the GaAs substrate.
Claim 3
Dependent Claim
15 words
A method according to claim 1, further comprising the step of annealing said GaAs substrate.
Claim 4
Dependent Claim
26 words
A method according to claim 2, wherein said step of annealing said GaAs substrate is performed within the temperature range from 450° C. to 600° C.