Method of making a semiconductor device by forming a nanochannel mask

Claim 1

A method for depositing a pattern of deposited material on or within a substrate, comprising the steps of: interposing a glass mask between a source and a substrate, the mask having channels therethrough which are arranged in a pattern which have an average diameter of less than about 400 Å; and depositing a material selected from the group of sources consisting of ions, electrons, photons, metals and semiconductor materials through the glass masks into or onto the substrate.

Claim 2

A method for depositing a pattern of deposited material on or within a substrate, comprising the steps of: interposing a glass mask between a source and a substrate, the mask having channels therethrough which are arranged in a pattern which have an average diameter of less than about 400 Å; and depositing a material selected from the group of sources consisting of ions, electrons, photons, metals and semiconductor materials through the glass masks into or onto the substrate.

Claim 3

A method for forming a semiconductor device, comprising the steps of: growing a first layer of first semiconductor material over a second semiconductor material substrate to form a base; interposing a glass mask between the base and a source of the first semiconductor material, the masks having channels therethrough which are arranged in a pattern which have an average diameter of less than 1 micron; depositing additional first semiconductor material through the glass mask and onto the base to form an array of pedestals; removing the mask; depositing a second layer of the second semiconductor material to form a cap on top of each pedestal and to form a connected layer of the second semiconductor material completely covering the base; and depositing a layer of the first semiconductor material over the second layer of the second semiconductor material to form an array of quantum dots suspended over a quantum well structure having holes therein.

Claim 4

A method for forming a semiconductor device, comprising the steps of: growing a first layer of first semiconductor material over a second semiconductor material substrate to form a base; interposing a glass mask between the base and a source of the first semiconductor material, the masks having channels therethrough which are arranged in a pattern which have an average diameter of less than 1 micron; depositing additional first semiconductor material through the glass mask and onto the base to form an array of pedestals; removing the mask; depositing a second layer of the second semiconductor material to form a cap on top of each pedestal and to form a connected layer of the second semiconductor material completely covering the base; and depositing a layer of the first semiconductor material over the second layer of the second semiconductor material to form an array of quantum dots suspended over a quantum well structure having holes therein.

Claim 6

A method for forming a semiconductor device comprising the steps of: interposing a glass mask between a semiconductor material substrate and a source of a metal dopant, the mask having channels therethrough which are arranged in a pattern and which have a average diameter of less than 1 micron; depositing the dopant through the mask and onto the substrate of semiconductor material; removing the mask; ion implanting additional dopant into the substrate; removing dopant on the surface of the substrate; and annealing the doped substrate to form a semiconductor device.

Claim 7

A method for forming a semiconductor device comprising the steps of: interposing a glass mask between a semiconductor material substrate and a source of a metal dopant, the mask having channels therethrough which are arranged in a pattern and which have a average diameter of less than 1 micron; depositing the dopant through the mask and onto the substrate of semiconductor material; removing the mask; ion implanting additional dopant into the substrate; removing dopant on the surface of the substrate; and annealing the doped substrate to form a semiconductor device.

Claim 9

A method of forming a semiconductor device comprising the steps of: forming a glass block of an acid inert glass having acid etchable glass rods extending therethrough, the acid etchable glass rods having a diameter of less than 1 micron, the acid inert glass having a lower melting point than the acid etchable glass; partially etching the acid etchable rods so that an exposed surface of the acid inert glass block extends above the ends of the acid etchable rods; bonding the exposed ends of the acid inert glass block to a substrate; etching away the acid etchable rods from the acid inert glass to form a mask on the substrate; and depositing a coating selected from the group consisting of metals and semiconductor materials through the glass block onto the substrate to form a semiconductor device.

Claim 10

A method of forming a semiconductor device comprising the steps of: forming a glass block of an acid inert glass having acid etchable glass rods extending therethrough, the acid etchable glass rods having a diameter of less than 1 micron, the acid inert glass having a lower melting point than the acid etchable glass; partially etching the acid etchable rods so that an exposed surface of the acid inert glass block extends above the ends of the acid etchable rods; bonding the exposed ends of the acid inert glass block to a substrate; etching away the acid etchable rods from the acid inert glass to form a mask on the substrate; and depositing a coating selected from the group consisting of metals and semiconductor materials through the glass block onto the substrate to form a semiconductor device.