Process for forming metal deposited film containing aluminum as main component by use of alkyl aluminum hydride

Claim 1

An apparatus providing a system for forming a metal film comprising: a load and unload chamber for loading a substrate having a semiconductor or conductor portion and an insulating portion and unloading said substrate on which a first metal film and a second metal film are formed; a first film-forming chamber provided with chemical vapor deposition means for selectively forming said first metal film on said semiconductor or conductor portion of said substrate by said chemical vapor deposition means, said chemical vapor deposition means having first gas supplying means for supplying an alkylaluminum hydride gas, second gas supplying means provided with a hydrogen purifier for supplying a purified hydrogen gas into said first film-forming chamber, gas evacuating means for evacuating means for evacuating said gas from said first film-forming chamber, and a first substrate holder, wherein said first film-forming chamber is connected with said load and unload chamber; a second film-forming chamber for non-selectively forming said second metal film on said first metal film and said insulating portion of said substrate, said second film-forming chamber having a second substrate holder and being connected with said load and unload chamber; a first gate valve disposed between said first film-forming chamber and said load and unload chamber; a second gate valve disposed between said second film-forming chamber and said load and unload chamber; and conveying means for conveying said substrate on which said first metal film is formed from said first film-forming chamber through said load and unload chamber to said second film-forming chamber, wherein said first film-forming chamber, said second film chamber and said load and unload chamber are shielded from an atmosphere during conveying of said substrate.

Claim 2

An apparatus providing a system for forming a metal film comprising: a load and unload chamber for loading a substrate having a semiconductor or conductor portion and an insulating portion and unloading said substrate on which a first metal film and a second metal film are formed; a first film-forming chamber provided with chemical vapor deposition means for selectively forming said first metal film on said semiconductor or conductor portion of said substrate by said chemical vapor deposition means, said chemical vapor deposition means having first gas supplying means for supplying an alkylaluminum hydride gas, second gas supplying means provided with a hydrogen purifier for supplying a purified hydrogen gas into said first film-forming chamber, gas evacuating means for evacuating means for evacuating said gas from said first film-forming chamber, and a first substrate holder, wherein said first film-forming chamber is connected with said load and unload chamber; a second film-forming chamber for non-selectively forming said second metal film on said first metal film and said insulating portion of said substrate, said second film-forming chamber having a second substrate holder and being connected with said load and unload chamber; a first gate valve disposed between said first film-forming chamber and said load and unload chamber; a second gate valve disposed between said second film-forming chamber and said load and unload chamber; and conveying means for conveying said substrate on which said first metal film is formed from said first film-forming chamber through said load and unload chamber to said second film-forming chamber, wherein said first film-forming chamber, said second film chamber and said load and unload chamber are shielded from an atmosphere during conveying of said substrate.

Claim 3

An apparatus providing a system for forming a metal film comprising: a first film-forming chamber provided with chemical vapor deposition means for selectively forming said first metal film on a semiconductor or conductor portion of a substrate by said chemical vapor deposition means, said chemical vapor deposition means having gas supplying means for supplying an alkylaluminum hydride gas, second gas supplying means provided with a hydrogen purifier for supplying a purified hydrogen gas into said first film-forming chamber, gas evacuating means for evacuating said gas from said first film-forming chamber, and a first substrate holder; a second film-forming chamber for non-selectively forming said second metal film on said first metal film and an insulating portion of said substrate, said second film-forming chamber having a second substrate holder; a conveying path being connected with said first film-forming chamber and with said second film-forming chamber and having gate valve means for isolating said first film-forming chamber and said second film-forming chamber; conveying means for conveying said substrate on which said first metal film is formed from said first film-forming chamber through said conveying path to said second film-forming chamber, wherein said first film-forming chamber, said second film-forming chamber and said conveying path are shielded from an atmosphere during conveying of said substrate.

Claim 4

An apparatus providing a system for forming a metal film comprising: a first film-forming chamber provided with chemical vapor deposition means for selectively forming said first metal film on a semiconductor or conductor portion of a substrate by said chemical vapor deposition means, said chemical vapor deposition means having gas supplying means for supplying an alkylaluminum hydride gas, second gas supplying means provided with a hydrogen purifier for supplying a purified hydrogen gas into said first film-forming chamber, gas evacuating means for evacuating said gas from said first film-forming chamber, and a first substrate holder; a second film-forming chamber for non-selectively forming said second metal film on said first metal film and an insulating portion of said substrate, said second film-forming chamber having a second substrate holder; a conveying path being connected with said first film-forming chamber and with said second film-forming chamber and having gate valve means for isolating said first film-forming chamber and said second film-forming chamber; conveying means for conveying said substrate on which said first metal film is formed from said first film-forming chamber through said conveying path to said second film-forming chamber, wherein said first film-forming chamber, said second film-forming chamber and said conveying path are shielded from an atmosphere during conveying of said substrate.

Claim 5

An apparatus providing the system according to claims 1 or 2, wherein said second film-forming chamber has a sputtering means.

Claim 6

An apparatus providing the system according to claims 1 or 2, wherein said second film-forming camber has a second chemical vapor deposition means.

Claim 7

An apparatus providing the system according to claims 1 or 2, wherein said second film-forming camber has a sputtering means and a target material for sputtering.

Claim 8

An apparatus providing the system according to claims 1 or 2, wherein said second chemical vapor deposition means further comprises a bubbler capable of bubbling with the use of the hydrogen gas purified by said hydrogen purifier.

Claim 9

An apparatus providing the system according to claims 1 or 2, further comprising a cleaning chamber capable of cleaning with etching the surface of said substrate on which said first metal film is formed in said first film-forming chamber.