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US5328872A Expired / Lapsed US ⏱️ 0.0 years remaining

Method of integrated circuit manufacturing using deposited oxide

Assignee: Nokia Bell Labs
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Filing: 1989-12-29
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Granted: 1994-07-12
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Expires: 2009-12-29
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Abstract

Abstract Contamination of LPCVDBP TEOS films is reduced by preventing volatile compounds, resulting from reactions of the residue in the outlet of the furnace from reaching the deposition portion of the furnace where they would otherwise react with the deposition gases to produce chemically generated particles which contaminate the dielectric film.

Inventors

  • 👤 Ajit S. Manocha
  • 👤 Virendra V. S. Rana
  • 👤 James F. Roberts
  • 👤 Ankineedu Velaga

Bibliographic Details

Application Number —
Jurisdiction US
Data Source google_patents
Last Synchronized 2026-11-03 11:54
CPC Classifications
C; C23; C23C; C23C16/00; C23C16/44; C23C16/54; C23C16/22; C23C16/30; C23C16/40; C23C16/401; C23C16/4412

Claims Analysis

Total Claims: 2
Claim 1
Independent Claim 64 words
A method of integrated circuit manufacture comprising the step of depositing a dielectric on wafers in a furnace by chemical vapor deposition, said dielectric comprising BPTEOS, comprising the further step of preventing the deposition of unwanted chemically generated particles on said dielectric in the deposition furnace, said preventing is by using a load locked chamber when wafers are loaded or unloaded from the furnace.
Claim 2
Independent Claim 64 words
A method of integrated circuit manufacture comprising the step of depositing a dielectric on wafers in a furnace by chemical vapor deposition, said dielectric comprising BPTEOS, comprising the further step of preventing the deposition of unwanted chemically generated particles on said dielectric in the deposition furnace, said preventing is by using a load locked chamber when wafers are loaded or unloaded from the furnace.

References Cited (Backward Citations)

US4557950A Cited
US4791005A Cited
US4849259A Cited
US4781945A Cited
US4876225A Cited
US4894352A Cited

USPTO Annuity & Maintenance Windows

Annuity Stage Window Opens Payment Deadline Surcharge Period Until Estimated Fee Status
3.5 Years (Year 4) 1997-07-11 1998-01-10 1998-07-12 $2000.00 Window Closed / Lapsed
7.5 Years (Year 8) 2001-07-11 2002-01-10 2002-07-12 $3760.00 Window Closed / Lapsed
11.5 Years (Year 12) 2005-07-11 2006-01-10 2006-07-12 $7700.00 Window Closed / Lapsed

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