Process for deposition of borophosphosilicate glass

Claim 2

A process for the chemical vapor deposition at low pressure of borophosphosilicate glass on a silicon wafer comprising the steps of: placing a silicon wafer to be treated in a process chamber; reducing a pressure within said process chamber to a subatmospheric pressure; heating said silicon wafer; contacting said silicon wafer with a mixture of gaseous compounds containing silicon, oxygen and phosphorus; contacting said silicon wafer with a boron halide gas; and reacting said silicon, oxygen, phosphorus gaseous compounds and said boron halide gas to form a layer of borophosphosilicate glass upon a surface of said silicon wafer.

Claim 3

A process for the chemical vapor deposition at low pressure of borophosphosilicate glass on a silicon wafer as defined in claim 1 wherein said pressure within said process chamber is less than or equal to 500 millitorr.

Claim 4

A process for the chemical vapor deposition at low pressure of borophosphosilicate glass on a silicon wafer as defined in claim 1 wherein said pressure within said process chamber is between 175 millitorr and 225 millitorr.

Claim 5

A process for the chemical vapor deposition at low pressure of borophosphosilicate glass on a silicon wafer as defined in claim 1 wherein said pressure within said process chamber is between 175 millitorr and 200 millitorr.

Claim 6

A process for the chemical vapor deposition at low pressure of borophosphosilicate glass on a silicon wafer as defined in claim 1 wherein said silicon wafer is heated to a temperature between 350° C. and 500° C.

Claim 7

A process for the chemical vapor deposition at low pressure of borophosphosilicate glass on a silicon wafer as defined in claim 1 wherein said silicon wafer is heated to a temperature of about 425° C.

Claim 8

A process for the chemical vapor deposition at low pressure of borophosphosilicate glass on a silicon wafer as defined in claim 1 wherein said boron halide gas comprises boron trichloride gas.

Claim 9

A process for the chemical vapor deposition at low pressure of borophosphosilicate glass on a silicon wafer as defined in claim 7 wherein said pressure of said process chamber is between 175 millitorr and 200 millitorr.

Claim 10

A process for the chemical vapor deposition at low pressure of borophosphosilicate glass on a silicon wafer as defined in claim 8 wherein said silicon wafer is heated to a temperature between 350° C. and 500° C.

Claim 11

A process for the chemical vapor deposition at low pressure of borophosphosilicate glass on a silicon wafer as defined in claim 8 wherein said silicon wafer is heated to a temperature of about 425° C.

Claim 12

A process for the chemical vapor deposition at low pressure of borophosphosilicate glass on a silicon wafer as defined in claim 10 wherein said mixture of gaseous compounds of silicon, oxygen and phosphorus comprise silane, oxygen and phosphine.

Claim 13

A process for the chemical vapor deposition at low pressure of borophosphosilicate glass on a silicon wafer comprising the steps of: inserting a silicon wafer to be treated into an elongated, cylindrical process tube; establishing an internal pressure within said elongated cylindrical process tube between 175 millitorr and 200 millitorr; heating said elongated cylindrical process tube to about 425° Centigrade; providing a gaseous source of silicon, oxygen, and phosphorus, to said elongated cylindrical process tube; contacting said silicon wafer within said tube with a boron halide gas; and terminating said flow of said gases when a desired thickness of borophosphosilicate glass has been deposited upon said plurality of silicon wafer.

Claim 14

A process for the chemical vapor deposition at low pressure of borophosphosilicate glass on a silicon wafer comprising the steps of: inserting a silicon wafer to be treated into an elongated, cylindrical process tube; establishing an internal pressure within said elongated cylindrical process tube between 175 millitorr and 200 millitorr; heating said elongated cylindrical process tube to about 425° Centigrade; providing a gaseous source of silicon, oxygen, and phosphorus, to said elongated cylindrical process tube; contacting said silicon wafer within said tube with a boron halide gas; and terminating said flow of said gases when a desired thickness of borophosphosilicate glass has been deposited upon said plurality of silicon wafer.

Claim 15

A process for the chemical vapor deposition at low pressure of borophosphosilicate glass on a silicon wafer comprising the steps of: placing a silicon wafer within a deposition tube; establishing a pressure within said deposition tube of between 175 millitorr and 225 millitorr; heating said silicon wafer to between 350° C. and 500° C.; flowing a silicon source gas into said deposition tube; flowing a phosphorus source gas into said deposition tube; flowing a boron halide source gas into said deposition tube; flowing oxygen gas into said deposition tube; discontinuing the flow of said silicon source gas, said phosphorus source gas, said boron halide gas and said oxygen gas after a predetermined thickness of borophosphosilicate glass has been deposited from said gases on said silicon wafer; raising the internal pressure of said deposition tube to atmospheric pressure; and removing said silicon wafer from said deposition tube.

Claim 16

A process for the chemical vapor deposition at low pressure of borophosphosilicate glass on a silicon wafer comprising the steps of: placing a silicon wafer within a deposition tube; establishing a pressure within said deposition tube of between 175 millitorr and 225 millitorr; heating said silicon wafer to between 350° C. and 500° C.; flowing a silicon source gas into said deposition tube; flowing a phosphorus source gas into said deposition tube; flowing a boron halide source gas into said deposition tube; flowing oxygen gas into said deposition tube; discontinuing the flow of said silicon source gas, said phosphorus source gas, said boron halide gas and said oxygen gas after a predetermined thickness of borophosphosilicate glass has been deposited from said gases on said silicon wafer; raising the internal pressure of said deposition tube to atmospheric pressure; and removing said silicon wafer from said deposition tube.

Claim 17

A process for the chemical vapor deposition at low pressure of borophosphosilicate glass on a plurality of silicon wafers comprising the steps of: placing a plurality of silicon wafers in a shrouded boat having a plurality of apertures formed therein which are adapted to admit process gases, said silicon wafers being oriented substantially parallel to each other and each said silicon wafer being separated from its nearest neighbor within said shrouded boat by a distance of not less than 5 millimeters and not greater than 15 millimeters; inserting said shrouded boat containing said silicon wafers into an elongated, cylindrical quartz process tube having an elongated axis of symmetry, said silicon wafers being positioned substantially perpendicular to said elongated axis of symmetry; reducing an internal pressure within said elongated, cylindrical process tube to a pressure of between 175 millitorr and 200 millitorr; heating said elongated, cylindrical process tube to an internal temperature of about 425° C.; flowing a quantity of silane gas at a first flow rate into a silane delivery line; flowing a quantity of phosphine gas at a second flow rate into a phosphine delivery line; flowing a quantity of boron trichloride gas at a third flow rate into a boron trichloride delivery line; receiving said quantities of silane gas, phosphine gas and boron trichloride gas in a reactant mixing line wherein the silane gas, the phosphine gas and the boron trichloride gas are mixed to form a mixture of reactant gases; flowing said mixture of reactant gases into an elongated tubular reactant gas injector located within said elongated, cylindrical process tube; flowing said gas mixture of reactant gases out of said reactant gas injector and into the vicinity of said plurality of silicon wafers located within said process tube; flowing a quantity of oxygen gas into an oxygen delivery line at a fourth flow rate substantially equal to 1.5 times said first flow rate; flowing said oxygen gas out of said oxygen delivery line through an elongated tubular oxygen injector located within said elongated process tube and into the vicinity of said plurality of silicon wafers; mixing said oxygen gas with said gas mixture of silane gas, phosphine gas and boron trichloride gas to effect a reaction therebetween; forming a layer of borophosphosilicate glass on a surface of each of said silicon wafers as a result of said reaction between said quantities of silane gas, phosphine gas, boron trichloride, gas and oxygen gas; and removing said shrouded boat containing said plurality of silicon wafers from said elongated, cylindrical process tube.

Claim 18

A process for the chemical vapor deposition at low pressure of borophosphosilicate glass on a plurality of silicon wafers comprising the steps of: placing a plurality of silicon wafers in a shrouded boat having a plurality of apertures formed therein which are adapted to admit process gases, said silicon wafers being oriented substantially parallel to each other and each said silicon wafer being separated from its nearest neighbor within said shrouded boat by a distance of not less than 5 millimeters and not greater than 15 millimeters; inserting said shrouded boat containing said silicon wafers into an elongated, cylindrical quartz process tube having an elongated axis of symmetry, said silicon wafers being positioned substantially perpendicular to said elongated axis of symmetry; reducing an internal pressure within said elongated, cylindrical process tube to a pressure of between 175 millitorr and 200 millitorr; heating said elongated, cylindrical process tube to an internal temperature of about 425° C.; flowing a quantity of silane gas at a first flow rate into a silane delivery line; flowing a quantity of phosphine gas at a second flow rate into a phosphine delivery line; flowing a quantity of boron trichloride gas at a third flow rate into a boron trichloride delivery line; receiving said quantities of silane gas, phosphine gas and boron trichloride gas in a reactant mixing line wherein the silane gas, the phosphine gas and the boron trichloride gas are mixed to form a mixture of reactant gases; flowing said mixture of reactant gases into an elongated tubular reactant gas injector located within said elongated, cylindrical process tube; flowing said gas mixture of reactant gases out of said reactant gas injector and into the vicinity of said plurality of silicon wafers located within said process tube; flowing a quantity of oxygen gas into an oxygen delivery line at a fourth flow rate substantially equal to 1.5 times said first flow rate; flowing said oxygen gas out of said oxygen delivery line through an elongated tubular oxygen injector located within said elongated process tube and into the vicinity of said plurality of silicon wafers; mixing said oxygen gas with said gas mixture of silane gas, phosphine gas and boron trichloride gas to effect a reaction therebetween; forming a layer of borophosphosilicate glass on a surface of each of said silicon wafers as a result of said reaction between said quantities of silane gas, phosphine gas, boron trichloride, gas and oxygen gas; and removing said shrouded boat containing said plurality of silicon wafers from said elongated, cylindrical process tube.