US4409424A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Compensated amorphous silicon solar cell
Assignee: United States Department of Energy
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Filing: 1982-06-21
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Granted: 1983-10-11
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Expires: 2002-06-21
Abstract
Abstract An amorphous silicon solar cell including an electrically conductive substrate, a layer of glow discharge deposited hydrogenated amorphous silicon over said substrate and having regions of differing conductivity with at least one region of intrinsic hydrogenated amorphous silicon. The layer of hydrogenated amorphous silicon has opposed first and second major surfaces where the first major surface contacts the electrically conductive substrate and an electrode for electrically contacting the second major surface. The intrinsic hydrogenated amorphous silicon region is deposited in a glow discharge with an atmosphere which includes not less than about 0.02 atom percent mono-atomic boron. An improved N.I.P. solar cell is disclosed using a BF3 doped intrinsic layer.
Inventors
- 👤 Genevieve Devaud
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-28 00:15
CPC Classifications
H; H10; H10F; H10F10/00; H10F10/10; H10F10/17; H10F10/14; H10F71/00; H10F71/10; H10F71/103; Y; Y02; Y02E; Y02E10/00; Y02E10/50; Y02E10/547; Y02E10/548; Y02P; Y02P70/00; Y02P70/50
Claims Analysis
Total Claims: 23
Claim 1
Independent Claim
96 words
In an amorphous silicon solar cell which comprises an electrically conductive substrate, a layer of glow discharge deposited hydrogenated amorphous silicon over said substrate and having regions of differing conductivity with at least one region of intrinsic hydrogenated amorphous silicon, said layer of hydrogenated amorphous silicon having opposed first and second major surfaces where said first major surface contacts said electrically conductive substrate, and means for electrically contacting said second major surface, the improvement wherein the intrinsic hydrogenated amorphous silicon region is deposited from an atmosphere containing not less than about 0.2 atom percent mono-atomic boron.
Claim 2
Dependent Claim
96 words
In an amorphous silicon solar cell which comprises an electrically conductive substrate, a layer of glow discharge deposited hydrogenated amorphous silicon over said substrate and having regions of differing conductivity with at least one region of intrinsic hydrogenated amorphous silicon, said layer of hydrogenated amorphous silicon having opposed first and second major surfaces where said first major surface contacts said electrically conductive substrate, and means for electrically contacting said second major surface, the improvement wherein the intrinsic hydrogenated amorphous silicon region is deposited from an atmosphere containing not less than about 0.2 atom percent mono-atomic boron.
Claim 3
Dependent Claim
16 words
The solar cell of claim 1, wherein said mono-atomic boron is present as a boron halide.
Claim 4
Dependent Claim
17 words
The solar cell of claim 1, wherein said mono-atomic boron is present as a boron fluoride-containing compound.
Claim 5
Dependent Claim
14 words
The solar cell of claim 1, wherein said boron is present as boron trifluoride.
Claim 6
Dependent Claim
26 words
The solar cell of claim 1, wherein the mono-atomic boron is present in an amount of from about 0.02 atom percent to about 10 atom percent.
Claim 7
Dependent Claim
26 words
The solar cell of claim 1, wherein the mono-atomic boron is present in the range of from about 0.02 atom percent to about 3.5 atom percent.
Claim 8
Dependent Claim
27 words
The solar cell of claim 1, wherein the intrinsic hydrogenated amorphous silicon layer has a thickness in the range of from about 300 to about 1,000 nanometers.
Claim 9
Dependent Claim
20 words
The solar cell of claim 1, wherein the intrinsic hydrogenated amorphous silicon layer has a thickness of about 700 nanometers.
Claim 10
Dependent Claim
78 words
An amorphous silicon solar cell comprising an electrically conductive substrate, a layer of glow discharge deposited hydrogenated amorphous silicon over said substrate and having regions of N-type conductivity and P-type conductivity separated by a region of intrinsic hydrogenated amorphous silicon deposited from an atmosphere containing not less than about 0.02 atom percent mono-atomic boron, said region of P-type conductivity being in electrical contact with said electrically conductive substrate, and means for electrically contacting said region of N-type conductivity.
Claim 11
Dependent Claim
78 words
An amorphous silicon solar cell comprising an electrically conductive substrate, a layer of glow discharge deposited hydrogenated amorphous silicon over said substrate and having regions of N-type conductivity and P-type conductivity separated by a region of intrinsic hydrogenated amorphous silicon deposited from an atmosphere containing not less than about 0.02 atom percent mono-atomic boron, said region of P-type conductivity being in electrical contact with said electrically conductive substrate, and means for electrically contacting said region of N-type conductivity.
Claim 12
Dependent Claim
16 words
The solar cell of claim 9, wherein said mono-atomic boron is present as a boron halide.
Claim 13
Dependent Claim
18 words
The solar cell of claim 9, wherein said mono-atomic boron is present as a boron fluoride containing compound.
Claim 14
Dependent Claim
14 words
The solar cell of claim 9, wherein said boron is present as boron trifluoride.
Claim 15
Dependent Claim
26 words
The solar cell of claim 9, wherein the mono-atomic boron is present in an amount of from about 0.02 atom percent to about 10 atom percent.
Claim 16
Dependent Claim
26 words
The solar cell of claim 9, wherein the mono-atomic boron is present in the range of from about 0.02 atom percent to about 3.5 atom percent.
Claim 17
Dependent Claim
27 words
The solar cell of claim 9, wherein the intrinsic hydrogenated amorphous silicon layer has a thickness in the range of from about 300 to about 1,000 nanometers.
Claim 18
Dependent Claim
20 words
The solar cell of claim 9, wherein the intrinsic hydrogenated amorphous silicon layer has a thickness of about 700 nanometers.
Claim 19
Dependent Claim
24 words
The solar cell of claim 9, wherein said N-type region has a thickness in the range of from about 10 to about 200 nanometers.
Claim 20
Dependent Claim
17 words
The solar cell of claim 9, wherein the N-type region has a thickness of about 20 nanometers.
Claim 21
Dependent Claim
24 words
The solar cell of claim 9, wherein the P-type region has a thickness in the range of from about 5 to about 100 nanometers.
Claim 22
Dependent Claim
17 words
The solar cell of claim 9, wherein the P-type region has a thickness of about 7.5 nanometers.
Claim 23
Dependent Claim
14 words
The solar cell of claim 9, wherein the said electrically conductive substrate is aluminum.
References Cited (Backward Citations)
US4217148A
Cited
US4357179A
Cited
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| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
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| 3.5 Years (Year 4) | 1986-10-10 | 1987-04-11 | 1987-10-11 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1990-10-10 | 1991-04-11 | 1991-10-11 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1994-10-10 | 1995-04-11 | 1995-10-11 | $7700.00 | Window Closed / Lapsed |